Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2094-2096
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101174
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