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  • 1
    Electronic Resource
    Electronic Resource
    Amphoteric behavior and precipitation of Ge dopants in InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4907-4915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly correlated the electrical behavior, the impurity lattice site location, ion damage, and the local bonding environments of Ge-dopant ions implanted into InP. We have found that after rapid thermal annealing the free electron concentration in the samples implanted at room temperature (RT) are always higher than those implanted at liquid nitrogen temperature (LNT). Although the macroscopic structure seems to be insensitive to the implantation temperature, significantly more local disorder is created in the LNT implanted amorphous layers. Moreover, the amphoteric bonding structure of the Ge atoms is found to be well established already in the as-implanted amorphous InP. After high temperature annealing ((approximately-greater-than)800 °C), the Ge atoms rearrange locally with more of the Ge substituting the In site than the P site resulting in n-type conductivity. The solid solubility of Ge in the InP is measured to be ∼1.4–1.6×1020/cm3 while the free electron concentration is estimated to saturate at ∼3.4×1019/cm3. The relatively low electron concentration can be explained by Ge precipitation and the compensation of GeIn donors by GeP acceptors in the RT implanted case. The further reduction in electron concentration in the LNT implanted samples is believed to be related to the high residual damage found in these samples. The high solubility of Ge in InP can be attributed to the availability of two possible sublattice sites for the dopant and the compensation of the local strains due to the amphoteric substitution of the Ge. The concentration ratio of the GeIn to GeP determined in the heavily implanted material has been used to estimate the difference in the formation energy of Ge substituting those two different sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363533
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance study on the behavior of plasma-induced defects deactivating Si donors in GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5103-5108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of Ar plasma-induced defects deactivating Si donors in GaAs has been studied. We have applied photoreflectance spectroscopic analysis combined with stepwise wet etching to the depth profiling of defects and succeeded in determining the concentrations and profiles of defects in the sub-surface layer for the first time. We found that the point defects responsible for deactivation undergo electronically enhanced diffusion under the circumstance of photoexcited carriers, demonstrating that the ultraviolet light from plasma is a cause of the deep penetration of defects far beyond the stopping range of ions. We also found that the generation of these point defects is enhanced by photoexcited carriers and that diffusing point defects are trapped by the background defects or impurities, forming immobile complexes. We propose a model in which self-interstitials are the most probable point defects responsible for deactivation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359742
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  • 3
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 4
    Electronic Resource
    Electronic Resource
    High dose Cl implantation in ZnSe: Impurity incorporation and radiation damage (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1378-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural characteristics of ZnSe thin films grown by organometallic vapor phase epitaxy and implanted heavily with Cl ions (5×1015 and 1×1016/cm2) were investigated using ion beam techniques, x-ray diffraction, and Raman spectroscopy. We have found that although the as-implanted ZnSe layers were severely damaged, no amorphous layer was formed with an implant dose as high as 1×1016 Cl ions/cm2. Crystalline damage in the ZnSe layers was not fully removed even after annealing at 700 °C for 10 s. Ion channeling reveals that after annealing over 50% of the Cl atoms sit substitutionally in the lattice and they are preferentially located in the Se site. However, a significant fraction of the substitutional Cl are found to be slightly displaced from the normal Se sites. The projected displacement was found to be ≈0.2 A(ring). Electrical measurements and Raman spectroscopy results suggest that a large concentration of Zn vacancies (VZn) are present in the annealed samples. We believe that the Cl displacement and the low conductivity in these samples are due to the formation of (ClSe−VZn) complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356417
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  • 5
    Electronic Resource
    Electronic Resource
    Hole-scattering mechanisms in modulation-doped heterostructures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3577-3579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole mobilities in the two highest spin-split subbands in a p-type modulation-doped heterostructure are calculated. The light-hole mobility is shown to be very low because of efficient scattering by the holes in the heavy mass subband. This finding significantly simplifies calculation of the charge transport, since only the heavy-hole contribution has to be considered. It is shown that for the state-of-the-art heterostructures the heavy-hole mobility is limited by the deformation potential acoustical and optical phonon scatterings with small contribution from ionized impurities at low temperatures. The valence-band deformation potential constant has been determined comparing the theoretical calculations with available experimental data on temperature dependence of the hole mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336782
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of diluted III–V nitride thin films by N ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2227-2234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diluted III–Nx–V1−x alloys were successfully synthesized by nitrogen implantation into GaAs, InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nx–V1−x alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grown GaNxAs1−x and InNxP1−x alloys. In GaNxAs1−x the highest value of x (fraction of "active" substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNxP1−x was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implanted InNxP1−x was at least a factor of 2 higher than that in GaNxAs1−x under similar processing conditions. AlyGa1−yNxAs1−x had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNxAs1−x alloys. Notably, the band gap of these alloys remains direct, even above the value of y (y〉0.44) where the band gap of the host material is indirect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388860
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of nitrogen on the band structure of GaInNAs alloys (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2349-2351 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that incorporation of nitrogen in Ga1−xInxAs to form Ga1−xInxNyAs1−y alloys leads to a splitting of the conduction band into two nonparabolic subbands. The splitting can be described in terms of an anticrossing interaction between a narrow band of localized nitrogen states and the extended conduction-band states of the semiconductor matrix. The downward shift of the lower subband edge accounts for the N-induced reduction of the fundamental band-gap energy. An analysis of the relationship between the subband splitting and the band-gap reduction demonstrates that the energetic location of the valence band is nearly independent of the N content in Ga1−xInxNyAs1−y alloys. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371148
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  • 8
    Electronic Resource
    Electronic Resource
    Lattice location of diffused Zn atoms in GaAs and InP single crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2998-3006 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 1020 cm−3 for GaAs, but the maximum concentration for InP appears at mid 1018 cm−3. The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn3P2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348613
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  • 9
    Electronic Resource
    Electronic Resource
    Native point defects in low-temperature-grown GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 279-281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present structural and electronic data which indicate that the dominant defects in GaAs grown at low temperatures (LT GaAs) by molecular beam epitaxy (MBE) are As antisites (AsGa) and Ga vacancies (VGa), with negligible amounts of As interstitials (Asi). We show that the change of lattice parameter correlates with the concentration of AsGa, and that AsGa alone can account for the lattice expansion. We also show that the total concentration of AsGa has a characteristic second power dependence on the concentration of AsGa in the positive charge state for the material grown at different temperatures. This can be understood provided that VGa defects are the acceptors responsible for the carrier compensation. Our results are consistent with most experimental results and the theoretical expectation from the calculation of defect formation energies. We find that the conclusion may also be true in As-rich bulk GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114782
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  • 10
    Electronic Resource
    Electronic Resource
    The effect of coimplantation on the electrical activity of implanted carbon in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7118-7123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of radiation damage and stoichiometry on the electrical activity of carbon implanted in GaAs are studied. Damage due to implantation of an ion heavier than C increases the number of C atoms which substitute for As (CAs). Creation of an amorphous layer by implantation and the subsequent solid phase epitaxy during annealing further enhances the concentration of CAs. However, the free carrier concentration does not increase linearly with increasing concentration of CAs due to compensating defects. Activation of implanted C is maximized by maintaining the stoichiometry of the substrate which reduces the number of compensating defects in the crystal. Under optimum conditions for carbon implanted at a dose of 5×1014 cm−2, the carbon acceptor activity can be increased from 2% to 65% of the total implanted carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355027
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