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  • 11
    Electronic Resource
    Electronic Resource
    Symmetry of optically active Yb-related centers in InP and In1−xGaxP (x≤0.13) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1180-1183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The symmetry of Yb3+-related luminescent centers in InP and In1−xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220–1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357843
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  • 12
    Electronic Resource
    Electronic Resource
    Electrical transport properties of epitaxial BaTiO3 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 969-977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the temperature dependent transport properties of epitaxial BaTiO3 are reported. Electrical resistivity and thermoelectric power were measured over the temperature range of 77–300 K. Room temperature resistivities of the as-deposited, undoped films range from 105 to 108 Ω cm, while values as low as 55 Ω cm are obtained for the La-doped films. The resistivity shows an activated temperature dependence with the measured activation energies ranging between 0.11 and 0.50 eV. The activation energy depends strongly upon the thin film carrier concentration. Thermoelectric power measurements indicate that the films are n-type. The Seebeck coefficient for La-doped BaTiO3 exhibits metallike behavior, with its magnitude directly proportional to temperature. Temperature dependent resistivity and thermopower measurements indicate that the carrier mobility is activated. A transport model is proposed whereby conduction occurs in the La-doped films via hopping between localized states within a pseudogap formed between a lower Hubbard band and the BaTiO3 conduction band edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362909
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  • 13
    Electronic Resource
    Electronic Resource
    Scanning tunneling optical spectroscopy of semiconductor quantum well structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2538-2539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling optical spectroscopy has been used to determine the optical properties of semiconductor quantum wells. With this technique, photoenhanced tunneling currents are measured with a scanning tunneling microscope on heterostructures illuminated with monochromatic light. For the InAsxP1−x/InP strained single quantum well structures, the 295 K spectra exhibit well-resolved transitions attributable to interband transitions involving the heavy-hole valence band and the n=1 conduction subband. The observed transition energies are in good agreement with values measured using photoconductivity and photoluminescence spectroscopy on the same samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104819
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  • 14
    Electronic Resource
    Electronic Resource
    Scanning tunneling optical spectroscopy of semiconductors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1295-1296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoenhanced tunneling currents are measured with a scanning tunneling microscope (STM) for semiconductors illuminated with monochromatic light. The spectral response of the STM tunnel junction was measured over the spectral range of 0.8–1.5 eV. Optical spectra for p-type (111)Si, epitaxial n-type (100)InP, and p-type (100)GaAs were obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104340
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  • 15
    Electronic Resource
    Electronic Resource
    Superconducting YBa2Cu3O7−x thin films on silver substrates by in situ plasma-enhanced metalorganic chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 89-91 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ microwave plasma-enhanced metalorganic chemical vapor deposition process was used to fabricate highly c-axis oriented YBa2Cu3O7−x superconducting thin films on metallic Ag substrates. The films were deposited at a reduced substrate temperature of 740 °C in about 270 Pa of N2O ambient. Magnetic susceptibilities versus temperature of the as-deposited films show attainment of zero resistance of 85 K and composition of single (high Tc) phase. X-ray diffraction measurements reveal that the films deposited at 740 °C have highly preferential orientation of the crystallite c axes perpendicular to the substrate surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104400
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  • 16
    Electronic Resource
    Electronic Resource
    Dynamic response of the electro-optic effect in epitaxial KNbO3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2707-2709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic response of the electro-optic coefficient of epitaxial KNbO3 thin films was measured at room temperature. The effective electro-optic coefficient for these films at 100 kHz is 12 pm/V. The magnitude of the electro-optic response increased by seventy percent as the duration of the applied field was increased from 10 ns to 10 μs. A dispersion of the electro-optic coefficient is observed which follows a power law given by Atm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125123
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  • 17
    Electronic Resource
    Electronic Resource
    Thin-film channel waveguide electro-optic modulator in epitaxial BaTiO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1783-1785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a thin-film channel waveguide electro-optic modulator fabricated in epitaxial BaTiO3 on MgO. Films had an effective dc electro-optic coefficient of reff∼50±5 pm/V and reff∼18±2 pm/V at 5 MHz for λ∼1.55 μm light. Extinction ratios of 14 dB were obtained. The electro-optic effect decreases to ∼60% of the dc value at 1 Hz, 50% of the dc value at 20 kHz, and ∼37% of the dc value at 5 MHz. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119397
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  • 18
    Electronic Resource
    Electronic Resource
    Thin film channel waveguides fabricated in metalorganic chemical vapor deposition grown BaTiO3 on MgO (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2968-2970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of channel waveguides in epitaxial grown BaTiO3 layers on MgO. Layers were prepared by metalorganic chemical vapor deposition. Ridge waveguides with ridge heights ranging from 15 to 200 nm were fabricated in a 0.2-μm-thick film. Single mode waveguide throughput, scattering loss, and mode profiles are reported. Coating waveguides with spin on glass significantly increase waveguide throughput. Throughputs of up to 10.4% were measured in 15 nm ridge waveguides which were 2.85 mm long and coated with spin on glass. Waveguide throughput is found to increase significantly with an increase in wavelength from 1.06 to 1.55 μm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117746
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  • 19
    Electronic Resource
    Electronic Resource
    Epitaxial growth of (Sr1−xCax)CuO2 thin film with the infinite-layer structure by metal-organic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-pure epitaxial (Sr1−xCax)CuO2 thin films having the infinite-layer crystal structure were grown on SrTiO3 (100) substrates by low pressure metal-organic chemical vapor deposition using fluorinated metal-organic precursors. The substrate temperature and reactant gas (O2, H2O) partial pressure are crucial for stabilizing the tetragonal infinite-layer structure. Films with compositions over the range x=0–0.3 can be stabilized. In-plane epitaxy was confirmed by x-ray diffraction φ scan. The films were semiconducting but exhibit resistivity anomalies. The orthorhombic phases of Sr2CuO3 and SrCuO2 were stabilized at 700 °C and 750 °C, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117632
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  • 20
    Electronic Resource
    Electronic Resource
    Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1142-1144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40–0.67 and quantum well thicknesses of 0.8–16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8–14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100742
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