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  • 1
    Electronic Resource
    Electronic Resource
    Symmetry of optically active Yb-related centers in InP and In1−xGaxP (x≤0.13) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1180-1183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The symmetry of Yb3+-related luminescent centers in InP and In1−xGaxP layers with alloy composition less than x=0.13 is studied using polarized excitation spectroscopy. An induced polarized luminescence under above gap excitation is detected and is explained in terms of an excitation mechanism involving 4f→5d shell electron transitions. It is shown that the Yb3+-related centers responsible for 1.220–1.237 eV luminescence are optically anisotropic with C3v symmetry or its subgroup. The effect of alloy composition on the symmetry of Yb centers is analyzed in terms of the Yb3+-GaIn defect model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357843
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical transport properties of epitaxial BaTiO3 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 969-977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the temperature dependent transport properties of epitaxial BaTiO3 are reported. Electrical resistivity and thermoelectric power were measured over the temperature range of 77–300 K. Room temperature resistivities of the as-deposited, undoped films range from 105 to 108 Ω cm, while values as low as 55 Ω cm are obtained for the La-doped films. The resistivity shows an activated temperature dependence with the measured activation energies ranging between 0.11 and 0.50 eV. The activation energy depends strongly upon the thin film carrier concentration. Thermoelectric power measurements indicate that the films are n-type. The Seebeck coefficient for La-doped BaTiO3 exhibits metallike behavior, with its magnitude directly proportional to temperature. Temperature dependent resistivity and thermopower measurements indicate that the carrier mobility is activated. A transport model is proposed whereby conduction occurs in the La-doped films via hopping between localized states within a pseudogap formed between a lower Hubbard band and the BaTiO3 conduction band edge. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362909
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3351-3354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372348
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  • 4
    Electronic Resource
    Electronic Resource
    Deep-level properties of Mn in InP (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6882-6885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of deep-level properties of Mn in InP are reported. Hall effect and deep-level transient spectroscopy were used to determine the ionization energy, thermal, and optical emission properties. A single level at Ev +0.25 eV associated with Mn was observed. The photoionization threshold of the center is 1.12 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345079
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  • 5
    Electronic Resource
    Electronic Resource
    Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4616-4618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia were investigated by transient capacitance spectroscopy. A total of three hole traps associated with nitrogen doping was observed with activation energies of 0.21, 0.3, and 0.45 eV. The traps H(0.21) and H(0.3) are tentatively attributed to a nitrogen-impurity complex. Concentrations of deep trapping states as high as 8×1014 cm−3 were observed in the as-grown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335369
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic and optical properties of deep levels in iron-doped InAsP alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6770-6774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic and optical properties of deep levels in Fe-doped InAsP grown by organometallic vapor phase epitaxy are investigated. Two deep levels associated with Fe are observed in the alloys. From measurements of the temperature dependence of resistivity, photoluminescence, and photoconductivity, the energy levels of iron in the alloys are determined for a wide range of compositions. The variation of the positions of the Fe energy levels as a function of composition is explained in terms of the vacuum-referred binding energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342511
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  • 7
    Electronic Resource
    Electronic Resource
    Temperature dependent photoluminescent properties of InAsxP1−x/InP strained-layer quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3041-3045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal quenching of photoluminescence from InAsxP1−x/InP strained-layer quantum wells has been investigated over the temperature range of 20–295 K. Structures with compositions of x=0.67 and x=1.0 and quantum well thicknesses of 1–17 monolayers were evaluated using Fourier transform photoluminescence spectroscopy. For InAs/InP heterostructures, the activation energy for thermal quenching depended on well thickness. Luminescence quenching was attributed to thermalization of free excitons from the well, and subsequent nonradiative recombination. Addition of phosphorus to the wells alters the recombination process responsible for luminescence quenching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351514
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  • 8
    Electronic Resource
    Electronic Resource
    A new route to high-Tc superconducting Bi–Sr–Ca–Cu–O thin films: Improved deposition efficiency and film morphology using ammonia–argon mixtures as the carrier gas (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2769-2771 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high-Tc superconductor Bi2Sr2CaCu2Ox have been prepared by a low-pressure organometallic chemical vapor deposition process using a mixture of ammonia and argon as the carrier gas together with Sr(dpm)2 (dpm-dipivaloylmethanate), Ca(dpm)2, Cu(acac)2 (acac-acetylacetonate), and triphenylbismuth as the organometallic precursors. By introducing ammonia into the carrier gas, a significant improvement in the volatility and thermal stability of both Sr(dpm)2 and Ca(dpm)2 is observed. Typical required source temperatures for Sr(dpm)2 and Ca(dpm)2 with the introduction of ammonia are about 40–50 °C lower than the source temperatures of the precursors without the introduction of ammonia. Enhancement of source volatility for Cu(acac)2 is also observed. After annealing at 865 °C in flowing oxygen, the films consist predominantly of the Bi2Sr2CaCu2Ox phase and exhibit high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistivity achieved at 74 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351052
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  • 9
    Electronic Resource
    Electronic Resource
    Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 405-408 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical emission characteristics of highly strained InAs/InP single quantum wells prepared using atmospheric-pressure organometallic vapor-phase epitaxy have been studied. For well thicknesses of one to three monolayers (ML), the photoluminescence (PL) spectra exhibited intense emission in the energy range 1.15–1.3 eV, with typical full width at half maximum of 8–14 meV. The dependence of PL emission energy on well thickness for 1–5-ML-thick wells was compared with the results of a finite-well calculation, taking into account the effects of strain on the band structure. Good agreement between experiment and theory was obtained for a valence-band offset of 270 meV, consistent with recent reports for the InAs/InP system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350289
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  • 10
    Electronic Resource
    Electronic Resource
    Defect structure of strontium titanate thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3927-3931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of deep-level defects in SrTiO3 thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO3 consisted of a series of deep-level trapping states with energies in the range of Ev+2.4 to Ev+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 1014 to 1018 cm−3 in the as-grown films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354492
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