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  • 21
    Electronic Resource
    Electronic Resource
    Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1351-1353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107314
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  • 22
    Electronic Resource
    Electronic Resource
    Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1787-1789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A picosecond ultrasonics technique has been used to detect interfacial fluorocarbon (CFx) layers as thin as 0.5 nm between aluminum and silicon. The presence of the CFx material reduces acoustic damping and heat loss from the Al film into the Si substrate. This provides a means for noninvasive identification of organic/polymeric contaminants at the buried interface and potentially for characterizing interfacial mechanical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108427
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  • 23
    Electronic Resource
    Electronic Resource
    Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The slowdown of the oxide etch rate with width of submicrometer structures is known as reactive ion etching (RIE) lag and has been explained by ion shadowing and differential charging of the sidewalls, among other effects [R. A. Gottscho and co-workers, J. Vac. Sci. Technol. B 10, 2133 (1992)]. Here we show for an inductively coupled high density plasma reactor working in the pressure regime from 6 to 20 mTorr that inverse RIE lag is primarily observed, i.e., the etch rates increase as the width of the microstructures decrease. Inverse RIE lag, which was first discussed by Vitkavage et al. [Tegal Plasma Proceedings Symposium, San Francisco, 1991 (unpublished)], may be explained by considering the neutral flux distribution at the structure bottom. The neutral flux has a stronger dependence on the aspect ratio than the ion flux due to its isotropic velocity distribution. The neutral flux distribution has been modeled and is consistent with etching profiles observed at high pressure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116772
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  • 24
    Electronic Resource
    Electronic Resource
    Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1013-1021 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects introduced by reactive-ion etching and plasma etching using deuterium have been studied in boron-doped Si with the photoluminescence (PL) technique. We have observed a set of broad luminescence bands in the below-band-gap range between 1.05 and 0.8 eV. These bands change in intensity as well as in photon energy with annealing. This has been studied by isochronal annealing treatments from 75 to 800 °C in steps of 50 °C, each for 30 min. Directly after the plasma treatment we observe overlapping broad bands at liquid-He temperature, with a peak around 0.9 eV and a half-width of about 100 meV. There is a large shift of these bands to higher photon energy after the annealing step at 325 °C, peaking at about 0.925 eV with a half-width of about 60 meV. The intensities of the broad PL bands increase with increasing annealing temperature up to about 375 °C, while they decrease in intensity at higher temperatures. The changes in PL intensity of the broad bands after annealing are shown to be related to the difference in deuterium concentration near the surface, as determined by secondary-ion mass spectrometry, due to the passivation effect the deuterium has on other competing recombination channels. The samples have not completely recovered after annealing at 800 °C, where a broad PL band at 0.96 eV still remains. PL bands observed in hydrogenated samples containing "bubbles'' will also be reported. We attribute all these PL bands to electron-hole recombination in heavily damaged regions, where electrons and holes can be localized in potential wells caused by the strain from the hydrogen-induced microscopic defects. This "strain-induced intrinsic quantum well'' model is supported by the temperature and excitation intensity dependence of the broad PL bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345784
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  • 25
    Electronic Resource
    Electronic Resource
    Electrical studies on plasma and reactive-ion-etched silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5388-5393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of reactive-ion etching (RIE) and plasma etching (PE) using deuterium on the electrical properties of boron-doped p-type silicon has been studied employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy (DLTS) measurements on the treated samples revealed the presence of a number of previously unreported near-surface traps. These comprise hole traps H(0.44) and H(0.54) at 0.44 and 0.54 eV above the valence band, respectively, and an electron trap E(0.46) at 0.46 eV below the conduction band. The H(0.44) observed directly after the RIE treatment increases in concentration as the sample is annealed to 200 °C, whereas the E(0.46) and H(0.54) are detected in the PE samples directly after etching and annealing at 100 °C, respectively. The depth profiles of the observed traps have been determined, and their annealing behavior is studied up to 200 °C. E(0.46) and H(0.54) are tentatively associated with strain-induced defects resulting from hydrogen platelet formation, whereas H(0.44) is attributed to a vacancy-related defect complex. Other broader DLTS signals following annealing ≥200 °C are explained in terms of additional trap levels closely positioned in the band gap and/or extended defect clusters. Also, the capacitance-voltage (C-V) data on the diodes were modeled to extract the boron deactivation depth profile of the samples after plasma exposures and upon annealing at 200 °C. For both RIE and PE, annealing at 200 °C for 60 min caused the shallow boron acceptor concentration in the samples to almost recover to its preetched value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343683
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  • 26
    Electronic Resource
    Electronic Resource
    Study of near-surface disorder and surface residues after reactive Ion etching of Silicon (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 275-281 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Helium ion channelling, nuclear reaction profiling and x-ray photoemission measurements of CF4/X%H2 (0≤X≤40) and CCIF3/50%H2 dry etched Si surfaces are reported. It is shown that plasma exposure of a clean Si surface leads to the deposition of a thin (∼30∼50) Å thick C,F-containing film (or C,F, C1-containing in the case of CC1F3/H2 etching). A subsurface Si carbide layer is formed during reactive ion etching. The near-surface region (∼30∼50 Å) of the Si substrate is heavily disordered as found by ion channeling. A modified, less damaged layer containing a high concentration of hydrogen is formed in the case of the H2 containing gases (as shown by nuclear reaction profillin) and extends more than 250 Å from the surface. It is found that heating the plasma exposed substrates to 400°C in dry O2 for 30 min is efficient in recovering good quality Si surfaces.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090503
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