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  • 11
    Electronic Resource
    Electronic Resource
    Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1587-1595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum pentoxide thin films (60–80 nm thick) on silicon were prepared by thermal oxidation at 430–675 °C of electron-beam evaporated Ta. The tantalum layers had been deposited by electron-beam evaporation onto the Si substrates held at room temperature (RT) or heated to 150 °C during Ta evaporation. The dc conduction properties and the dielectic strength of the Ta2O5 films were studied employing Al/Ta2O5/Si capacitors. The smallest conductivity was found for Ta2O5 films formed from Ta deposited onto Si held at RT during evaporation and oxidized at 490 °C for 1 h in dry O2. This minimum conductivity corresponds to a leakage current of 1×10−7 A/cm2 at an applied field of 1 MV/cm (Al negative on p-type Si substrates). The dc conduction characteristics can be interpreted by assuming Poole–Frenkel conduction. For Ta2O5 formed from Ta which had been deposited onto Si substrates held at 150 °C during evaporation, the conductivity is smallest for a film which had been oxidized at 430 °C for 1 h (lowest oxidation temperature investigated). Ta2O5 films formed from Ta deposited onto Si substrates at RT exhibit lower conductivity than Ta2O5 films formed from Ta deposited onto heated (150 °C) Si substrates for a given oxidation temperature. The presence of water in the oxidizing ambient was found to greatly deteriorate the leakage characteristics of the Ta2O5 films. The dielectric strength of the Ta2O5 film for which the lowest conductivity was observed (oxidized at 490 °C) ranged from 2 to 4.5 MV/cm. A maximum in the breakdown distribution was found for a breakdown strength of 3–3.5 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336468
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  • 12
    Electronic Resource
    Electronic Resource
    Nonintrusive wafer temperature measurement using in situ ellipsometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3390-3392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348517
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  • 13
    Electronic Resource
    Electronic Resource
    Effects of deuterium plasmas on silicon near-surface properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3297-3300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342666
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  • 14
    Electronic Resource
    Electronic Resource
    A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2958-2967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive characterization of the damage and contamination produced in silicon by CC1F3/H2 reactive ion etching is presented. This highly selective SiO2-to-Si reactive ion etching process unfortunately produces all three of the deleterious damage-contamination layers that can result from dry etching exposure; viz., CC1F3/H2 reactive ion etching produces a residue layer on the Si surface, a permeated layer at the Si near-surface, and a layer of damaged Si. Various post-RIE-exposure, surface-recovery approaches are evaluated in this report. The results indicate that in order to restore the surface to a device-quality state, it is not sufficient to simply eliminate surface contamination. Damage incurred in the silicon bonding must be restored or removed. The latter can be accomplished by suitable treatments such as wet chemical silicon etch or silicide formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336934
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  • 15
    Electronic Resource
    Electronic Resource
    Hydrogen plasma induced defects in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99810
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  • 16
    Electronic Resource
    Electronic Resource
    Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2317-2319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon surfaces reactive ion etched in CF4/H2 plasmas have been examined using medium energy ion scattering and core level photoemission. Surfaces analyzed in ultrahigh vacuum have a significantly higher fluorine content than surfaces that have been exposed to air prior to analysis. In addition, an unusually large cross section exists for ion beam desorption of some, but not all, of the fluorine. Based on core level shifts, we demonstrate that fluorine desorption arises from both the fluorocarbon film and the underlying fluorosilyl layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100265
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  • 17
    Electronic Resource
    Electronic Resource
    Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1351-1353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The complex refractive index at a wavelength of 632.8 nm of strained epitaxial SiGe layers on silicon substrates has been determined as a function of the germanium content using in situ ellipsometry during reactive ion etching. The germanium concentration was obtained from Rutherford backscattering. These index values are used to invert the ellipsometry equations. Using this principle, the Ge concentration depth profile of an unknown SiGe structure can be determined from an in situ ellipsometry measurement sequence that is taken while the unknown sample is being etched
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107314
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  • 18
    Electronic Resource
    Electronic Resource
    Selective dry etching of silicon with respect to germanium (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1436-1438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin ((approximately-equal-to)3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102490
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  • 19
    Electronic Resource
    Electronic Resource
    Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The slowdown of the oxide etch rate with width of submicrometer structures is known as reactive ion etching (RIE) lag and has been explained by ion shadowing and differential charging of the sidewalls, among other effects [R. A. Gottscho and co-workers, J. Vac. Sci. Technol. B 10, 2133 (1992)]. Here we show for an inductively coupled high density plasma reactor working in the pressure regime from 6 to 20 mTorr that inverse RIE lag is primarily observed, i.e., the etch rates increase as the width of the microstructures decrease. Inverse RIE lag, which was first discussed by Vitkavage et al. [Tegal Plasma Proceedings Symposium, San Francisco, 1991 (unpublished)], may be explained by considering the neutral flux distribution at the structure bottom. The neutral flux has a stronger dependence on the aspect ratio than the ion flux due to its isotropic velocity distribution. The neutral flux distribution has been modeled and is consistent with etching profiles observed at high pressure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116772
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  • 20
    Electronic Resource
    Electronic Resource
    Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2875-2877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ ellipsometry has been used to measure in real time the surface damage introduced during electron cyclotron resonance (ECR) plasma etching of silicon as a function of rf bias to the substrate. CF4 and SF6 plasmas were employed. For all ECR plasma operating conditions, the amount of Si surface damage increases with the rf bias voltage, without an apparent damage threshold. It is shown that the surface damage depends on the ion current to the substrate and the gas, with SF6 plasmas resulting in the least surface damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108062
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