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  • 1985-1989  (11)
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  • 1
    Electronic Resource
    Electronic Resource
    Silicon loss and transient etch rate in selective reactive ion etching of oxide overlayers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2698-2700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide to silicon etch selectivity in reactive ion etching (RIE) employing fluorocarbon gases is due to the formation of a fluorocarbon film on the substrate. This implies that etch selectivity is not achieved instantly but that the substrate will exhibit a transient etch rate and hence material loss during the film formation period. The amount of silicon lost during overetching for CF4/H2 RIE was determined by Rutherford backscattering spectrometry employing a buried marker. For standard etching conditions, about 7 nm of silicon is lost within the first minute of overetching as compared to 1.5 nm expected from steady-state etch rate data. The Si etch rate varies strongly as a function of time and decreases by a factor of greater than 10 within the first 30 s of overetching to approach a steady-state value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100673
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101115
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical studies on plasma and reactive-ion-etched silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5388-5393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of reactive-ion etching (RIE) and plasma etching (PE) using deuterium on the electrical properties of boron-doped p-type silicon has been studied employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy (DLTS) measurements on the treated samples revealed the presence of a number of previously unreported near-surface traps. These comprise hole traps H(0.44) and H(0.54) at 0.44 and 0.54 eV above the valence band, respectively, and an electron trap E(0.46) at 0.46 eV below the conduction band. The H(0.44) observed directly after the RIE treatment increases in concentration as the sample is annealed to 200 °C, whereas the E(0.46) and H(0.54) are detected in the PE samples directly after etching and annealing at 100 °C, respectively. The depth profiles of the observed traps have been determined, and their annealing behavior is studied up to 200 °C. E(0.46) and H(0.54) are tentatively associated with strain-induced defects resulting from hydrogen platelet formation, whereas H(0.44) is attributed to a vacancy-related defect complex. Other broader DLTS signals following annealing ≥200 °C are explained in terms of additional trap levels closely positioned in the band gap and/or extended defect clusters. Also, the capacitance-voltage (C-V) data on the diodes were modeled to extract the boron deactivation depth profile of the samples after plasma exposures and upon annealing at 200 °C. For both RIE and PE, annealing at 200 °C for 60 min caused the shallow boron acceptor concentration in the samples to almost recover to its preetched value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343683
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2951-2956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission was used to probe the surface modifications which occur while etching TiSi2 in CF4 plasmas. Fluorination of the silicide leads to the depletion of Si from the surface region and the formation of a relatively thick (∼15–20 A(ring)) overlayer with an average stoichiometry of TiF3. An identical overlayer also forms on pure Ti. The overlayer is primarily composed of a single fluorinated species and apparently does not contain a distribution of different species as in the case of fluorinated Si. This observation strongly suggests that the limiting factor in the etching of these materials is the further reaction/sputtering of this stable, nonvolatile fluoride. Also, as in the case of Si etching in halocarbon plasmas, CFx films were found to form with increasing addition of H2. Significant differences in the quantity and composition of the films were found compared to those formed on Si substrates, with Si exhibiting a higher tendency to promote CFx film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342742
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  • 5
    Electronic Resource
    Electronic Resource
    Plasma chemical aspects of magnetron ion etching with CF4/O2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2518-2522 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the chamber walls. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE. Sputtering of Al from the electrode produces a substantial deposit of AlFx on the chamber walls, but not on the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339463
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1587-1595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum pentoxide thin films (60–80 nm thick) on silicon were prepared by thermal oxidation at 430–675 °C of electron-beam evaporated Ta. The tantalum layers had been deposited by electron-beam evaporation onto the Si substrates held at room temperature (RT) or heated to 150 °C during Ta evaporation. The dc conduction properties and the dielectic strength of the Ta2O5 films were studied employing Al/Ta2O5/Si capacitors. The smallest conductivity was found for Ta2O5 films formed from Ta deposited onto Si held at RT during evaporation and oxidized at 490 °C for 1 h in dry O2. This minimum conductivity corresponds to a leakage current of 1×10−7 A/cm2 at an applied field of 1 MV/cm (Al negative on p-type Si substrates). The dc conduction characteristics can be interpreted by assuming Poole–Frenkel conduction. For Ta2O5 formed from Ta which had been deposited onto Si substrates held at 150 °C during evaporation, the conductivity is smallest for a film which had been oxidized at 430 °C for 1 h (lowest oxidation temperature investigated). Ta2O5 films formed from Ta deposited onto Si substrates at RT exhibit lower conductivity than Ta2O5 films formed from Ta deposited onto heated (150 °C) Si substrates for a given oxidation temperature. The presence of water in the oxidizing ambient was found to greatly deteriorate the leakage characteristics of the Ta2O5 films. The dielectric strength of the Ta2O5 film for which the lowest conductivity was observed (oxidized at 490 °C) ranged from 2 to 4.5 MV/cm. A maximum in the breakdown distribution was found for a breakdown strength of 3–3.5 MV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336468
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of deuterium plasmas on silicon near-surface properties (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3297-3300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342666
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  • 8
    Electronic Resource
    Electronic Resource
    A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2958-2967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive characterization of the damage and contamination produced in silicon by CC1F3/H2 reactive ion etching is presented. This highly selective SiO2-to-Si reactive ion etching process unfortunately produces all three of the deleterious damage-contamination layers that can result from dry etching exposure; viz., CC1F3/H2 reactive ion etching produces a residue layer on the Si surface, a permeated layer at the Si near-surface, and a layer of damaged Si. Various post-RIE-exposure, surface-recovery approaches are evaluated in this report. The results indicate that in order to restore the surface to a device-quality state, it is not sufficient to simply eliminate surface contamination. Damage incurred in the silicon bonding must be restored or removed. The latter can be accomplished by suitable treatments such as wet chemical silicon etch or silicide formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336934
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen plasma induced defects in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99810
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  • 10
    Electronic Resource
    Electronic Resource
    Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2317-2319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon surfaces reactive ion etched in CF4/H2 plasmas have been examined using medium energy ion scattering and core level photoemission. Surfaces analyzed in ultrahigh vacuum have a significantly higher fluorine content than surfaces that have been exposed to air prior to analysis. In addition, an unusually large cross section exists for ion beam desorption of some, but not all, of the fluorine. Based on core level shifts, we demonstrate that fluorine desorption arises from both the fluorocarbon film and the underlying fluorosilyl layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100265
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