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  • 21
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 1004 (1989), S. 239-244 
    ISSN: 0005-2760
    Keywords: Condensation ; Fatty acid elongation ; Free fatty acid ; Lipid-protein interaction ; Phospholipase A"2
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
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  • 22
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 958 (1988), S. 361-367 
    ISSN: 0005-2760
    Keywords: 3-Ketoacyl-CoA reduction ; Condensation ; Deuterium transfer ; Fatty acid elongation ; Very long chain fatty acid elongation
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
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  • 23
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 49 (1987), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Serotonin stimulated adenylate cyclase in Aplysia neurons with a Kact of 0.7 μM. Under the same conditions, 1 -[2-(4-aminophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine stimulated adenylate cyclase with a Kactof 20 μM. The azido derivative of this compound, 1-[2-(4-azidophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine, or of serotonin, (4-amino, 3-nitrophenylazido-serotonin), also stimulated the cyclase in the dark, but with lower efficiency (Kact 〈 10−4M). Irradiation of the membranes in the presence of 100 μM 1-[2-(4-azidophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine abolished 75% of the cyclase activity stimulated by 5 μM serotonin. Under the same conditions, 100 μM 4-amino, 3-nitrophenylazido-serotonin did not inhibit serotonin-stimulated adenylate cyclase activity. When [3H] 1 -[2-(4-azidophenyl)ethyl]4-(3-trifluoromethylphenyl)piperazine (20 μM) was irradiated with membranes for 5 min at 4°C, a dozen peptides were labeled, as revealed by a fluorogram of sodium dodecyl sulfate-polyacrylamide gels. Among them, the labeling of five polypeptides (molecular weights of 45,000, 55,000, 63,000, 80,000, and 94,000) was protected by the presence of 0.2 mMserotonin during photolysis. These peptides may be related to serotonin receptors.
    Type of Medium: Electronic Resource
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  • 24
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 56 (1991), S. 0 
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The activity of protein tyrosine kinases was determined in extracts from Alzheimer's disease brains and age-and postmortem time-matched control brains at autopsy using the synthetic peptide substrate poly(Glu4Tyr1). The specific activity of protein tyrosine kinases in the particulate fraction decreased roughly twofold (p 〈 0.02) in Alzheimer's disease frontal cortex relative to unaffected control cortex. Cytosolic protein tyrosine kinase activity in Alzheimer's disease tissue was not significantly different from that in control tissue. In contrast to reduced particulate protein tyrosine kinase activity, analysis of Western blots of cytosolic and particulate fractions revealed increases in cytosolic antiphosphotyrosine immunoreactive polypeptides with molecular masses of 55 and 60 kDa. Quantitative immunohistochemistry and morphometry of frontal cortex sections with the antiphosphotyrosine antibody indicated increased antiphosphotyrosine staining in the neurons, although the number of antiphosphotyrosine-positive neurons per square millimeter decreased. Also, increased antiphosphotyrosine staining was observed in the hippocampal neurons. These results suggest that altered protein tyrosine kinases and protein tyrosine phosphorylation are involved in the pathology of Alzheimer's disease.
    Type of Medium: Electronic Resource
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  • 25
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The changes in the levels of protein kinase C [PKC(α, βII, γ)] were studied in cytosolic and particulate fractions of striatal homogenates from rats subjected to 15 min of cerebral ischemia induced by bilateral occlusion of the common carotid arteries and following 1 h, 6 h, and 48 h of reperfusion. During ischemia the levels of PKC(βII) and -(γ) increased in the particulate fraction to 390% and 590% of control levels, respectively, concomitant with a decrease in the cytosolic fraction to 36% and 20% of control, respectively, suggesting that PKC is redistributed from the cytosol to cell membranes. During reperfusion the PKC(βII) levels in the particulate fraction remained elevated at 1 h postischemia and decreased to below control levels after 48 h reperfusion, whereas PKC(γ) rapidly decreased to subnormal levels. In the cytosol PKC(βII) and -(γ) decreased to 25% and 15% of control levels at 48 h, respectively. The distribution of PKC(α) did not change significantly during ischemia and early reperfusion. The PKC activity in the particulate fraction measured in vitro by histone IIIS phosphorylation in the presence of calcium, 4β-phorbol 13-myristate 12-acetate, and phosphatidylserine (PS) significantly decreased by 52% during ischemia, and remained depressed over the 48-h reperfusion period. In the cytosolic fraction PKC activity was unchanged at the end of ischemia, and decreased by 47% after 6 h of reperfusion. The appearance of a stable cytosolic 50-kDa PKC-immunoreactive peptide or an increase in the calcium-and PS-independent histone IIIS phosphorylation was not observed. Consequently, during ischemia PKC, preferentially PKC(γ) and PKC(βII), is translocated from the cytosol and inserted into cell membranes, concomitant with a decrease in PKC activity. In the reperfusion phase the depression of PKC activity persists and the enzyme is degraded. The observed translocation and downregulation of PKC during ischemia and reperfusion may be of significance for the development of ischemic neuronal damage.
    Type of Medium: Electronic Resource
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  • 26
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Recent studies have identified the Alzheimer's disease amyloid β/A4 protein precursor (APP) as a trophic and/or tropic protein on several types of cells, including fibroblasts, primary culture neurons, PC12 cells, and B103 neuron-like cells. Many trophic proteins bind heparin, and it is believed that the heparin-binding domain is crucial for the trophic activity of these proteins. APP also binds heparin. The current studies were undertaken to examine the hypothesis that the neuritotropic activity of APP requires heparin binding. It was found that APP produced in E. coli bound B103 cells through detergent-extractable molecules. Approximately 50% of the binding sites were heparinase-sensitive, and heparin and heparan sulfate competed for APP binding to these sites. The heparinase-insensitive sites were recognized by a stretch of 17 amino acids of APP (residues 319–335) that contains the neuritotropic activity of APP. A mutant APP with a deletion at this site was capable of binding to the heparinase-sensitive sites, although this molecule was not neuritotropic to B103 neuron-like cells. Therefore, the neuritotropic site and the heparin-binding site are distinct in APP, and the neuritotropic effect of APP is produced through its binding to detergent-extractable and heparinase-insensitive sites.
    Type of Medium: Electronic Resource
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  • 27
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1592-1597 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ observations of As atoms at step sites of vicinal Si (100) surfaces have been performed by coaxial impact-collision ion scattering spectroscopy. It is found that some As atoms remain at Si step sites even at a high substrate temperature of 780 °C under an As residual pressure, in spite of evaporation of As atoms from terrace sites. This result indicates that As atoms at step sites are energetically more stable than the As dimers on the terrace. Moreover, the angular profiles of the scattering intensity from As atoms at step sites suggest that there is atomic displacement of As atoms towards the Si substrate at the step sites. An atomic model of the As/Si system is proposed from the results of computer simulation for the scattering intensity profiles.
    Type of Medium: Electronic Resource
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  • 28
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5987-5994 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of the interaction of electron-cyclotron-resonance (ECR) plasmas with the surface of GaAs substrates are studied by real-time optical reflection spectroscopy. Analysis with a three-phase ambient/overlayer/substrate model yields information on the time-dependent composition of the near-surface region, such as the thickness, degree of amorphization, and oxide and void fraction in the overlayer. Using this technique, it is observed that the thickness of the damaged layer formed by the impact of energetic ions increases linearly with the ion energy during argon ECR sputter etching. Furthermore, the dynamics of a cleaning process with a hydrogen ECR plasma have been studied. At temperatures between 300 and 500 °C this cleaning can be characterized by a two-step process. During the first few seconds of exposure, the oxide layer is removed; in the second step, the GaAs is etched gently, which leads to a surface region with little damage to the crystal. At lower temperatures, cleaning is not successful and a thick damaged overlayer is formed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 29
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7211-7222 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown and characterized epitaxial layered structure GaSe on As-passivated Si(111) and GaAs on GaSe on As-passivated Si(111) for the ultimate purpose of using the layered structure GaSe as a lattice mismatch/thermal expansion mismatch buffer layer in the GaAs on Si system. Films were grown on nominally (111) oriented Si substrates by molecular beam epitaxy and characterized by in situ reflection high energy electron diffraction, as well as by ex situ scanning electron microscopy and both plan-view and cross-sectional TEM (transmission electron microscopy). In this study, GaSe was grown epitaxially on As-passivated Si(111) substrates at 500 °C with Se/Ga BEP (beam equivalent pressure) ratios of ∼10 and ∼20. Small droplets were observed on the surface after GaSe growth. These are thought to be droplets of unreacted Ga. The density and size of the droplets decreases with the increasing Se/Ga BEP ratio. When the GaSe surface is exposed to As, the droplets become GaAs islands. Subsequent GaAs growth was carried out at 400 and 500 °C, giving the following results for 300-A(ring)-thick films: as grown GaAs films were highly twinned, and some polycrystalline GaAs was present in the film grown at 400 °C. In situ annealing at 650 °C for 10 min reduced the density of twins in both cases. In plan-view TEM, Moiré fringes from both GaAs and GaSe are observed and show conclusively that the GaAs grew epitaxially on the GaSe without contacting the Si substrate. Cross-sectional TEM shows the interface between the Si and GaSe is not smooth on the atomic scale. In spite of this, the GaSe becomes smooth with about 2 monolayers of growth and the GaAs/GaSe interface appears to be very smooth.
    Type of Medium: Electronic Resource
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  • 30
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth stages of the highly lattice-mismatched GaAs/InAs system was studied by coaxial impact collision ion scattering spectroscopy (CAICISS). The GaAs coverage on the InAs substrate during GaAs molecular beam epitaxial growth was monitored in situ by low incident angle CAICISS. The scattering intensity as a function of the deposited amount of GaAs can be divided into three characteristic regions. First, the scattering intensity from In decreases proportionally with the amount of deposited GaAs molecules. However, the intensity decrease stops abruptly before the surface is completely covered with a GaAs layer, and remains constant. Then, the intensity gradually decreases. This result shows that there exist three kinds of growth stages in the process of GaAs deposition on an InAs substrate. The mechanism of the growth mode transition, corresponding to the three kinds of growth stages is discussed from the viewpoint of a strain energy change on the surface.
    Type of Medium: Electronic Resource
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