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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4744-4746 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical transmittances of anodic alumina films which contain nematic liquid crystals in columnar pores were studied. Since liquid crystals are enclosed in narrow pores of ∼2000 A(ring) diameter, light scattering occurs not only by the refractive index mismatch between the liquid crystals and alumina but also by the prominent distribution of the refractive index inside the liquid crystals. The transmittance changes reversibly with an electric field and temperature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 269-272 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared optical fiber made of As2S3 glass has been applied for remote sensing of hydrocarbon gases. The fiber has enabled a transmission of the radiation at 3.39-μm wavelength, where hydrocarbon molecules have strong absorption bands. Using a 3.39-μm He-Ne laser as a light source, an effective remote sensing system has been established. A detection limit of the gas concentration is ∼300 ppm for CH4 gas, which is ∼0.6% of the lower explosion limit. The system is also expected as a pressure monitor since it is highly sensitive to the gas pressure.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1450-1452 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An As-S glass fiber with Teflon Fluorinated Ethylene Propylene (FEP) cladding has been fabricated. The transmission range of this fiber was 1–7 μm with two pronounced absorption peaks at 2.8 and 4.1 μm. It was found that these absorptions were caused by moisture adsorbed on the surface of the As-S glass as well as the hydrogen impurity due to the silica ampule. By removing these impurities the absorption loss was reduced and a minimum optical loss of 0.15 dB/m was obtained for this infrared fiber.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5477-5485 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for structural studies of surfaces and buried interfaces using synchrotron radiation was built and tested at the 27-pole wiggler station BL13B of the Photon Factory. The apparatus was designed to combine x-ray absorption fine structure (XAFS), x-ray standing wave (XSW), and surface x-ray diffraction techniques in the same ultrahigh vacuum (UHV) chamber. The apparatus features a seven-element Si(Li) solid-state detector array for a fluorescence yield measurement and a high precision eight-axis goniometer in the UHV chamber with a base pressure of 1×10−10 Torr. For the same sample mounted on the in-vacuum goniometer, vertically or horizontally polarized surface-sensitive XAFS, surface x-ray diffraction, and XSW can be measured. As a performance test, the structure of Ge overlayers on Si(001) was studied by polarized surface-sensitive XAFS. The results show that the apparatus can probe the local structure of adatoms with ∼0.1 monolayer sensitivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 607-609 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel micropolarizer has been fabricated from alumina and nickel by means of anodization and electroplating techniques. Making use of the anisotropic microstructure of the anodized alumina film, a lattice of nickel columns is easily constructed in the film, which works as a wire grid type polarizer. The fabricated polarizer has achieved an extinction ratio larger than 30 dB at the wavelength of 1.3 μm.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3593-3597 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization-curling mode in a columnar-structure film with perpendicular magnetization is studied on the assumption that the film is a two-dimensional array of cylinders. The angular dependence of the nucleation field HN is calculated by the Ritz method and compared with that for the coherent-rotation mode. It is found that the magnetization rotates in the curling mode for a large reduced radius S and in the coherent-rotation mode for a small S. The angular dependence of HN is different from that in an infinite cylinder. If S is large, the magnetization rotates in the curling mode for any value of θ0, where θ0 is the angle between the applied field and the cylinder axis. When S is medium, the magnetization rotates in the coherent-rotation mode for a small θ0 and in the curling mode for a large θ0. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fuel areal density ρR measurement of imploded plastic hollow shell targets by use of a neutron activation technique is reported. Silicon was doped as an activatable tracer into a hollow shell of tritium-contained deuterated polymer(CDTSi). This target was imploded by 0.53 μm Nd:glass laser light and the induced radioactivity of 28 Al was measured with a β-γ coincidence counting system. The collection efficiency was calibrated by the use of radioactive tracer 24 Na and was verified by comparing the estimated ρR with that simultaneously measured by a knock-on method.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 2895-2900 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1441-1443 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic precipitation from a thin, 100-nm surface layer of GaAs grown at low temperature (LT) by molecular beam epitaxy is investigated. The precipitate depth distribution is examined for different rapid thermal annealing cycles. It is found that the precipitate distribution can tail a long distance into the underlying stoichiometric GaAs layer, depending on the peak annealing temperature. The distribution for an 800 °C anneal is virtually unaffected by a prior low temperature "soak'' at 600 °C, thus showing that the precipitation is insensitive to the initial point defect concentrations in this temperature range. The relevance of these results to the precipitation process and to the use of thin LT layers in device applications is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2194-2196 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral patterning of arsenic precipitates in GaAs is reported. The positions of near-surface precipitates in a GaAs layer grown by molecular beam epitaxy at low temperature are controlled by InGaAs stressors 45 nm in width covered by a SiO2 film. The stressors form a surface grating which governs the precipitate position by modulating the strain in the GaAs near the surface. Electron microscopy clearly reveals the formation of precipitates about 15 nm in diameter aligned with the stressors at a depth of ∼50 nm. It is suggested that this capability to control the position of nanometer-size metallic particles within a semiconductor could open up new possibilities for novel devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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