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  • 1
    Digitale Medien
    Digitale Medien
    Facial distribution of subcutaneous fat in women (2004)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 26 (2004), S. 0 
    Details
    ISSN: 1468-2494
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: There is great interest in the cosmetic field in improving the shape of the face, which is determined by the amount of bone, muscle and subcutaneous fat. We examined the amount of facial subcutaneous fat in healthy women by magnetic resonance imaging (MRI), and investigated the distribution of fat in relation to the body shape. A total of 38 healthy women; 10 lean, 18 normal and 10 obese subjects, were examined by cephalometric MRI to obtain T1-weighted images, by which fat regions can be clearly observed. The area of subcutaneous fat was greater in obese subjects than in normal subjects, and was decreased in lean subjects. At 45 measured points, the thickness of subcutaneous fat was greater in the cheek near the nose independently of the body shape, and the surface of the masseter muscle and lower jaw increased according to the body mass index (BMI). This research suggested that there are two types of regions, one type maintains fat mass and the other type increases with BMI.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-2494.2004.00231_4.x
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  • 2
    Digitale Medien
    Digitale Medien
    Age-associated changes in the amount of subcutaneous tissue in the face evaluated in the ultrasonic B mode (2005)
    Oxford, UK : Blackwell Science Ltd
    International journal of cosmetic science 27 (2005), S. 0 
    Details
    ISSN: 1468-2494
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: In this study, age-associated changes in facial skin, cosmetologically critical factors, were studied in terms of local subcutaneous fat tissue. The subjects were 98 Japanese females evenly chosen from their teens to 70s. On each subject, the thickness of subcutaneous tissue was determined by the ultrasonic B mode method on four facial sites, forehead, orbit, cheek, and mandible. Age-association of the tissue thickness was facial site-dependent. In the orbit, the subcutaneous tissue became thicker with age, whereas it showed a tendency of thinning in the forehead. No clear age-association was observed in the cheek or the mandible. To analyze the age-association further, the data were stratified into ‘lean group’ and ‘obese group’ based on their BMI, and subjected to multiple regression analysis. The age-association in the orbit was much more distinctive in the lean group than in the obese group.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1467-2494.2005.00260_3.x
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  • 3
    Digitale Medien
    Digitale Medien
    Photoluminescence study of the annealing behavior of transmuted impurities in neutron-transmutation-doped semi-insulating GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2248-2253 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In neutron-transmutation-doped GaAs irradiated with various fast neutron fluences, the annealing behavior of band-germanium acceptor [Ge(B-A)] transitions has been evaluated using the photoluminescence technique. In the fast neutron irradiation of ≤7.0×1017 cm−2, a few percent of transmuted Ge atoms behave as acceptors in As sites and more than 98% of the transmuted Ge atoms activate as donors in Ga sites. In the fast neutron irradiation of 3.7×1018 cm−2, the shift of Ge(B-A) transitions towards lower energies originates from the band-edge distortion. Removing the band-edge distortion by annealing above 790 °C leads to the increase in the Ge acceptor, accompanied by an increase of the peak intensity of Ge(B-A) transitions. The lower electrical activation of transmuted impurities (∼75%) arises from the high-temperature annealing required to remove the radiation damage. On annealing out the radiation damage, the peak shift of Ge(B-A) transitions based on the increase in the free carrier is discussed using the Burstein–Moss model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342837
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  • 4
    Digitale Medien
    Digitale Medien
    Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1099-1103 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The nature of the tunneling-assisted hopping conduction in neutron-transmutation-doped GaAs has been studied under photoexcitation with a photon energy of 1.32 eV. It is found that the dopants activated by annealing around 400 °C provide the electrons to the defect levels originating the hopping conduction even when under photoexcitation. The hopping conduction under photoexcitation is affected by quenching in photoconductance below 120 K concerned with the main electron trap (EL2) and/or the As antisite defect (AsGa) induced by the neutron irradiation. The photoconductance of the samples with a lower radiation damage, AsGa≤1×1018 cm−3, consists of the coexistence of the hopping and band conductions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340014
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  • 5
    Digitale Medien
    Digitale Medien
    Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 61-65 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The substitutional site of the implanted Ga impurity in (11¯00)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across 〈11¯00〉 axial channels parallel to (112¯0) plane. Ga ions are implanted at an energy of 400 keV to a dose of 5×1015/cm2 through 200-nm-thick SiO2 at room temperature. In the samples annealed at 1200 °C for 30 min, the implanted Ga impurities in SiC are located preferentially on the Si sublattice sites rather than on the C sublattice sites in 6H-SiC. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1330241
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  • 6
    Digitale Medien
    Digitale Medien
    Charge-exchange neutral particle measurement in MeV energy range on JT-60U : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 339-341 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A charge-exchange neutral particle analyzer for the measurement of the MeV energy range ions produced by nuclear fusion or radio frequency heating has been developed and installed in JT-60U. Neutral particles entering the analyzer are ionized with a carbon foil of thickness 400 A(ring). The energy and mass of the stripped ions are resolved by magnetic and electrostatic fields (E(parallel)B type). The analyzer has eight CsI(Tl) scintillator detectors. The energy range is 0.5–4 MeV for 4He0, the dynamic range is 4.08 and the energy resolution is 6%–11%. The detection efficiency for 4He0 with energy above 1 MeV is 30%–40%. A pulse height analysis (PHA) with 16 channels was adopted to distinguish particle signals from noise arising from neutrons, γ rays and optical lights emitted by JT-60U plasmas. The validity of the PHA was confirmed in a calibration experiment using a neutron source and in a high power heating experiment in JT-60U. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1146405
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  • 7
    Digitale Medien
    Digitale Medien
    Electrical properties of B-ion-implanted Si layer preamorphized by Ge ions (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1876-1878 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: B+-implanted Si layers preamorphized with 100-keV Ge+ implantation have been evaluated using Rutherford backscattering spectrometry and the van der Pauw technique. We suggest that the lower structural recovery, 98% of Si occupies substitutional sites, arises from the difference in tetrahedral covalent radii among Si, Ge, and B atoms. Electrical properties of dual Ge+/B+-implanted layers are discussed by a two-carrier model consisting of both electron and hole. The conversion temperature from the p- to the n-type varies from ∼15 to ∼ 125 °C with increasing electrical activation of the boron acceptor. The activation saturates at annealing temperatures above 800 °C. This restriction is due to the presence of the level and/or the defect induced in the preamorphization process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344366
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  • 8
    Digitale Medien
    Digitale Medien
    The role of Ga antisite defect in the activation process of transmuted impurities in neutron-transmutation-doped semi-insulating GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 363-366 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In neutron-transmutation doping for undoped and In-doped GaAs irradiated with thermal and fast neutrons of 1.5×1018 and 7.0×1017 cm−2, we have found for the first time photoluminescence emissions around 860 and 935 nm at 77 K associated with the two difference levels of Ga antisite defect (GaAs). It is suggested that the annealing of GaAs defects plays an important role in the activation process of transmuted impurities as well as the annealing of As antisite defects forming midgap electron traps. The GaAs defects are annihilated in an annealing temperature range from 650 to 700 °C, accompanied by an abrupt decrease in resistivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347145
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  • 9
    Digitale Medien
    Digitale Medien
    Channeling study of local distortion in indium-doped semi-insulating GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3890-3892 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The local distortion in the indium-doped semi-insulating GaAs has been evaluated by means of ion channeling experiments along three directions for various indium concentrations up to 6.3×1020/cm3. The local distortion due to the indium doping gradually increases with the indium concentration, accompanied by the increase in minimum yield along the 〈100〉, 〈110〉, and 〈111〉 axes. The increase of the local distortion is independent of the crystal growth method.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344993
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  • 10
    Digitale Medien
    Digitale Medien
    Depth uniformity of electrical properties and doping limitation in neutron-transmutation-doped semi-insulating GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3542-3544 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Depth uniformity of electrical properties has been evaluated for neutron-transmutation-doped (NTD), semi-insulating GaAs irradiated with thermal neutrons of 1.5×1018 cm−2 by the van der Pauw method combined with iterative etching of the surface. In NTD-GaAs wafers (thickness ∼410 μm) annealed for 30 min at 700 °C, the depth profiles of the resistivity, the carrier concentration, and the Hall mobility show constant values of 1×10−2 Ω cm, 2.0×1017 cm−3, and 3100 cm2/V s, respectively, within an experimental error of 5%. In an annealing process, the redistribution and/or the segregation of NTD impurities is not observed. We also discuss the limitations of low-level NTD in semi-insulating GaAs. It is suggested that the activation of the NTD-impurities below ∼1×1016 cm−3 is mainly restricted by the presence of the midgap electron trap (EL2).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345303
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