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  • 1
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Ga substitution on the magnetocrystalline anisotropy of arc-melted Sm2Co17−xGax (x=5,6) compounds (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 488-491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Ga substitution on the magnetocrystalline anisotropy of Sm2Co17−xGax (x=5,6) compounds has been investigated by means of x-ray diffraction (XRD) and magnetic measurements. XRD patterns show that the samples studied here crystallize in the rhombohedral Th2Zn17-type structure. The Curie temperature for Sm2Co12Ga5 and Sm2Co11Ga6 is 367 and 166 K, respectively, according to thermal-magnetic curves. XRD measurement on the magnetically aligned sample shows that the room temperature easy magnetization direction of Sm2Co12Ga5 compound corresponds to the c axis. The spin-reorientation transition is observed at 32 K for Sm2Co11Ga6. The anisotropy constants K1 and K2 of Sm2Co17−xGax (x=5,6) were derived by fitting the magnetization recoil curve measured between 5 K and their Curie temperature. An anomalous jump in magnetization is found in the magnetization curve of Sm2Co12Ga5 compound. In order to investigate the temperature dependence of the critical field Hcrit in which the jumps of magnetization occur, hysteresis loops were measured in a field range of −90–90 kOe between 5 and 150 K. The critical field is found to shift rapidly to lower value with increasing temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328063
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic properties of Sm2Co17−xGax (x=0–7) compounds (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5314-5316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The study of the effect of Ga substitution on the magnetic properties of arc-melted Sm2Co17−xGax (x=0–7) compounds has been carried out by means of x-ray diffraction (XRD) and magnetic measurements. XRD patterns show that all samples of Sm2Co17−xGax (x=0–7) crystallize in the rhombohedral Th2Zn17-type structure. The Ga substitution for Co leads to an approximately linear decrease in the Curie temperature and a rapid decrease in the saturation magnetic moment which is faster than that in the case of magnetic dilution. Spin-reorientation transition is observed for Sm2Co11Ga6 compound at 32 K. In order to determine the room-temperature easy magnetization direction (EMD), XRD measurements are performed on magnetically aligned samples with x≤5. The result shows that the EMD of these compounds corresponds to the c axis. The anisotropy constants K1 and K2 of Sm2Co17−xGax compounds were derived by fitting the hard-direction magnetization recoil curves measured on magnetically aligned powder samples as well as by fitting the magnetization recoil curves measured on polycrystalline bulk samples. The fitting results indicate that the substitution of Ga for Co in Sm2Co17 compound decreases the anisotropy constants, thus indicating the weakening of the easy-axis anisotropy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373332
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  • 4
    Electronic Resource
    Electronic Resource
    Exchange anisotropy of epitaxial Fe/MnPd bilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2054-2057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy contributions in epitaxial Fe/MnPd bilayers were analyzed in this study. It was found that due to ferromagnetic–antiferromagnetic interfacial exchange coupling, large uniaxial and cubic anisotropy contributions are also induced, in addition to the unidirectional anisotropy. These contributions play an essential role in the magnetization reversal process of the system, in which unusual reversal processes were found upon some fields orientations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305907
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  • 5
    Electronic Resource
    Electronic Resource
    Perpendicular anisotropy in the amorphous TbCo/Si multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6845-6847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TbCo/Si multilayers prepared by the rf magnetron sputtering system with various Si thickness have been investigated. X-ray diffraction, magnetic measurement and Kerr rotation have been performed. No antiferromagnetic coupling was found for the system. With the thickness of Si layer tSi increasing, the perpendicular anisotropy constant Ku, and the saturation magnetization Ms decreased rapidly. It was assumed that Co2Si and Tb had been formed in the interfacial zone between TbCo and Si layers due to the interlayer diffusion. The decreasing of Ms is attributed to the decreasing of the effective thickness of magnetic layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372861
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 254-256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus-controlled growth rate of homoepitaxial (100) InP, GaP, and AlP on GaP substrates by gas source molecular beam epitaxy was investigated. Elemental group-III sources and thermally cracked phosphine were used. The growth rate was monitored by the specular beam intensity oscillations of reflection high-energy electron diffraction. This technique gives exact values of V/III ratio on the surface by measuring the amount of phosphorus which is actually incorporated into the film. Here the V/III ratio is defined as P-controlled growth rate divided by group-III-controlled growth rate instead of the beam flux V/III ratio. Also the phosphorus surface desorption activation energies were measured to be 0.61 eV and in the range between 0.89 and 0.97 eV for InP and GaP, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104706
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  • 7
    Electronic Resource
    Electronic Resource
    A study of group-V desorption from GaAs and GaP by reflection high-energy electron diffraction in gas-source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2806-2809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Desorption behaviors of arsenic on GaAs and phosphorus on GaP surfaces have been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V cracker shutter is closed in gas-source molecular beam epitaxy. We obtained an activation energy of 58 kcal/mol for arsenic desorption from GaAs. Compared with arsenic on GaAs, phosphorus on GaP has a large desorption rate constant, and the activation energy of phosphorus desorption is 43 kcal/mol. These activation energies are comparable to the heats of vaporation of As2 and P2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351532
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  • 8
    Electronic Resource
    Electronic Resource
    A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 255-259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinetic model has been developed to explain As and P incorporation behaviors in GaAs1−xPx epilayers grown on GaAs (001) by gas-source molecular beam epitaxy. The model can predict the P compositions for various substrate temperatures and flow rates. The model shows that an in situ determination of GaP molar fraction in GaAs1−xPx can be performed by group V-induced intensity oscillations of reflection high-energy-electron diffraction at low substrate temperatures where desorption of group V species is negligible. At high substrate temperatures the compositions can be determined from the arsine and phosphine flow rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354155
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  • 9
    Electronic Resource
    Electronic Resource
    Director-configuration diagram for a closed-cylinder nematic liquid crystal (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2189-2194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study reports that the director configuration diagram of a closed cylinder of nematic liquid crystal (CC NLC) with normal orientation at the walls may contain four kinds of stable director configurations. Sample cells were prepared by treating all walls of a closed cylindrical cavity with DMOAP (N,N-dimethyl-N-octadecyl-3- aminopropyltrimethoxysilyl-chloride) and then filling with NLC 5CB. The optical patterns of the CC NLCs were observed between crossed linear polarizers. A theory explaining these observations was developed by calculating the spatial distribution of the nematic director fields. The stable director configurations depend not only on the ratio of the splay and bend Frank elastic constant (K11/K33), but also on the aspect ratio of the cylinder. In general, the occurrence of a transformation between the radial and the hyperbolic type is determined by a critical transformation ratio K11/K33; there is also a critical aspect ratio remarking the transformation between the point and the ring structure. The calculations predict that the characteristic lengths of both the radial and the hyperbolic ring structure are nearly invariant with respect to K11/K33 and the aspect ratio of the cylinder.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351115
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  • 10
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenic (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4393-4395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth behavior of metalorganic molecular-beam epitaxial (MOMBE) growth of GaAs using trimethylgallium and solid arsenic is studied by the intensity oscillation behavior of reflection high-energy electron-diffraction (RHEED). The growth process is more complicated than conventional MBE using elemental sources. In MOMBE the growth rate depends not only on the substrate temperature but also on the arsenic pressure. In addition, the RHEED behavior indicates a possibility of atomic layer epitaxy using trimethylgallium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344914
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