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  • 1
    Digitale Medien
    Digitale Medien
    The bonding of CAs acceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6754-6760 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InxGa1−xAs layers (0≤x≤0.37) doped with carbon (〉1020 cm−3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values of x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A−1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H–CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm−1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm−1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In–CAs bonds as well as Ga–CAs bonds are formed, whereas there is no evidence for the formation of In–CAs bonds in samples doped with C derived from trimethylgallium or solid sources. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363803
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  • 2
    Digitale Medien
    Digitale Medien
    Elastic properties of GaAs during amorphization by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2388-2392 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Line-focus beam acoustic microscopy has been used to study changes in the elastic constants of GaAs during amorphization produced by implantation with Si+ ions at liquid-nitrogen temperature. The distribution of amorphous material was determined by Rutherford backscattering and channeling. Values of c11 and c44 were estimated by fitting theoretical curves to the measured angular dispersion of surface acoustic waves in the (001) plane. The implanted material was modeled as a statically stressed anisotropic layer on an unmodified GaAs substrate. The values of c11 and c44 were found to decrease with increasing ion fluence. At the highest fluence the implanted region was completely amorphous, and it was observed that the softening of c44(41%) was significantly greater than that of c11(17%). © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358763
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  • 3
    Digitale Medien
    Digitale Medien
    Pd/Ti bilayer contacts to heavily doped polycrystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 311-312 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ohmic contact properties of Pd/Ti bilayer to heavily doped n+-polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352140
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  • 4
    Digitale Medien
    Digitale Medien
    Identification of CoSi inclusions within buried CoSi2 layers formed by ion implantation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3792-3794 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-dose Co ion implantation in Si at elevated temperatures is used to synthesize buried CoSi2 layers. It is shown that inclusions of CoSi occur in the CoSi2 layer, when the stoichiometry level is exceeded at the peak of the Co distribution. These CoSi precipitates are observed prior to annealing and after a 5 s rapid thermal annealing (RTA) at 800 °C. During furnace annealing at 1000 °C or for RTA at temperatures above 900 °C, the CoSi phase transforms into CoSi2. In this communication the results of a transmission electron microscopy study of the CoSi inclusions are correlated with the Co depth profile, as determined by Rutherford backscattering spectrometry.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346308
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  • 5
    Digitale Medien
    Digitale Medien
    Epitaxial (100) silicon films grown at low temperatures in an electron-beam evaporator (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1252-1255 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial silicon films were grown on (100) silicon wafers at temperatures between 650 and 700 °C without the need of special cleaning procedures. Deposition rates were from 30 to 80 nm/min. The structure of films was analyzed by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectroscopy. The films were doped by ion implantation. Electrical activity, Hall mobility, and sheet resistivity of the doped layers were measured. Both structural and electrical characterization yielded results indistinguishable from good-quality bulk wafers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.334522
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  • 6
    Digitale Medien
    Digitale Medien
    Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3565-3573 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: (100) Silicon wafers were implanted with 120 keV germanium ions at substrate temperatures up to 600 °C. The germanium profile was monitored together with the crystalline fraction of the implanted silicon by Rutherford backscattering spectroscopy channeling in the 〈100〉 direction. Extensive profile broadening was seen with elevated temperature implants accompanied by a peak shift of 50 nm away from the surface for the highest temperature implant at 600 °C. A germanium tail was also seen extending deeper than 300 nm for this implant together with a reduction in the peak germanium concentration of more than 60% when compared with similar implants at room temperature. Radiation enhanced diffusion and enhanced sputtering are ruled out as causes for the profile broadening. Instead we demonstrate channeling along the 〈100〉 direction to be the cause of both the observed broadening and the increase in the peak depth. This was confirmed by eliminating such profile broadening in a sample implanted at 600 °C by tilting the implant away from major axial and planar channels. Positron annihilation spectroscopy was used to monitor the profile of open volume defects in the implanted material. Data from this analysis show that a defect concentration of greater than 1016/cm3 extends to a depth of (approximate)1.2 μm for 1×1014 Ge/cm2 at room temperature. A higher concentration of such defects appear deeper for similar implants at 450 °C. These deep open volume defects can be eliminated by using tilted implants through an amorphous 0.5 μm SiO2 mask layer. Their formation is consistent with germanium ion channeling during the initial stages of room temperature implantation and extensive channeling for elevated temperature implantation. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366573
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  • 7
    Digitale Medien
    Digitale Medien
    Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity-induced disordering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1373-1375 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Impurity-induced disordering of GaAs/AlGaAs multiple quantum well waveguide structures has been carried out using the neutral impurities boron and fluorine, introduced by ion implantation and followed by thermal annealing. Substantial blue shifts (up to 100 meV) in the absorption edge have been obtained and, for similar conditions, fluorine-induced disordering produces larger shifts than boron-induced disordering. Optical transmission measurements performed in slab and rib waveguides indicate that the additional contribution to the absorption coefficient associated with boron disordering is 15 dB cm−1 and with fluorine disordering is only 6 dB cm−1.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101597
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  • 8
    Digitale Medien
    Digitale Medien
    Amorphous-iron disilicide: A promising semiconductor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1438-1440 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 °C. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1400760
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  • 9
    Digitale Medien
    Digitale Medien
    Simulated annealing analysis of Rutherford backscattering data (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 291-293 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The combinatorial optimization simulated annealing algorithm is applied to the analysis of Rutherford backscattering data. The analysis is fully automatic, i.e., it does not require time-consuming human intervention. The algorithm is tested on a complex iron-cobalt silicide spectrum, and all the relevant features are successfully determined. The total analysis time using a PC 486 processor running at 100 MHz is comparable to the data collection time, which opens the way for on-line automatic analysis. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119524
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  • 10
    Digitale Medien
    Digitale Medien
    Fluorine enhanced oxidation of silicon at low temperatures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1572-1574 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the oxidation of silicon at and below 550 °C in a mixture of oxygen and fluorine. Introduction of small concentrations of fluorine (〈0.1%) in the oxygen ambient increases the oxide growth sharply to rates in excess of 8 A(ring)/min where the average fluorine concentration in the oxide can exceed 6 at. %. For each oxidation temperature there was a unique fluorine concentration at which the oxidation rate was at its highest. Fluorine depth profiles in the film were determined by high depth resolution nuclear reaction analysis, and high interface concentrations of fluorine were observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112918
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