Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance related transport properties in multilayers and bulk materials (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6919-6924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic comparison of magnetoresistance, Hall effect, thermal conductivity, and thermoelectric power has been made on systems exhibiting giant magnetoresistance (GMR), Co/Cu/Ni(Fe) multilayers, and AgCo granular alloys, for examples. Each property exhibits field dependence characteristic of the GMR and justifies its own merit in characterizing the conduction-electron scattering responsible for the GMR. The comparison was extended to intermetallic compounds such as REGa2 and RECo2 (RE: rare earth element) which also show a large magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358117
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Helix-Coil Stability Constants for the Naturally Occurring Amino Acids in Water. 16. Aspartic Acid Parameters from Random Poly(hydroxybutylglutamine-co-L-aspartic acid) (1977)
    s.l. : American Chemical Society
    Macromolecules 10 (1977), S. 1271-1283 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma60060a022
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Preparation and properties of III-V nitride thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2984-2988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of III-V nitride semiconductors (AlN, GaN, InN), mixed-crystalline films (AlxIn1−xN), and multilayered films (GaN/InN)n were grown by rf magnetron sputtering at low substrate temperatures below 500 °C. These films were characterized by x-ray diffraction, Raman scattering, optical absorption, and electrical measurements; it was proved that they have high crystal quality comparable to the previously reported data obtained by other growth methods. Dependence of the band-gap energy of AlxIn1−xN on composition x was determined. Multilayered films of (GaN/InN) were prepared for the first time; these films showed the characteristic diffusion property to make an ordered-alloy superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344181
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Nanoporous structure of sputter-deposited silicon oxide films characterized by positronium annihilation spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1704-1706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positronium annihilation was applied to characterize the nanoporous structure of thin silicon oxide films sputter-deposited at different argon pressures ranging from 0.1 to 2.0 Pa. At higher argon pressures, the 3γ decay probability of ortho-positronium (o-Ps) was substantially enhanced. A comparison of this result with that obtained for capped samples indicated that: (a) 3γ annihilation is due to the intrinsic decay of o-Ps diffusing out from the film into vacuum and (b) films deposited at high argon pressures contain highly connected, open pores. Positron lifetime spectroscopy measurements on the capped films showed that the characteristic size of the pores can be as large as 2.6 nm, depending on the argon pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428787
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of LiNbO3-LiTaO3 thin films on Al2O3 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2989-2993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of LiNbO3 and LiTaO3 were grown on sapphire substrates by the rf-magnetron sputtering method. Structural characterization was made by several spectroscopic measurements: x-ray diffraction, Raman scattering, and optical absorption. We obtained epitaxial thin films with lattice-mismatched strained layers, without misfit defects which are usually created at the interface. Impurity-ion (Nd3+ and Cr3+) doped films were also grown; these films had larger refractive indices than the pure films. Furthermore, the heteroepitaxial thin films of up to 10 alternating LiNbO3/LiTaO3 layers were successfully grown, and their periodic structures were studied by optical second-harmonic generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339385
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Nanostructure of thin amorphous hydrogenated carbon films studied by positron annihilation and photoluminescence (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 404-410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deposited polymer-like a-C:H films using the plasma-enhanced chemical vapor deposition technique and characterized film microstructure by variable-energy positron lifetime spectroscopy, photoluminescence (PL), and UV-visible absorption spectroscopy. It was confirmed that PL occurs from a chromophore in a sp2 cluster as a result of fast recombination of a photoexcited electron-hole pair. Positron annihilation lifetime spectroscopy showed that positronium (Ps) formation takes place via electron-positron recombination in the sp3 matrix. The lifetime of ortho-positronium (o-Ps) in our a-C:H films was similar to that in polyethylene, indicating their polymer-like nature. The relative PL efficiency increased by about an order of magnitude with increasing film band gap from 1.3 to 3.4 eV, which can be related to the decreasing concentration of nonradiative centers. On the other hand, Ps formation was much less influenced by the band gap and nonradiative centers. Comparison of this result with that for polyethylene mixed with carbon-black nanoparticles, where a considerable reduction in Ps formation was observed, showed that nonradiative centers were of a different nature from the defects on the carbon nanoparticle surface. This work demonstrated the usefulness of positron lifetime spectroscopy combined with optical measurements to study the nanostructure of a-C:H. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1378063
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Valence bands of poly(methylmethacrylate) and photoion emission in vacuum ultraviolet region (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoion and photoelectron yields were measured for poly(methylmethacrylate) in the photon energy region of 8–40 eV using synchrotron radiation. Further, the valence-band structure was investigated with ultraviolet photoelectron spectra and valence effective Hamiltonian calculations. A significant difference was observed between the photon energy dependencies of photoion and photoelectron yields. The threshold energy for photoion emission was found to be 10.5 eV, while that for photoelectron emission was 8.5 eV, indicating holes created near the valence-band top do not contribute to the ion emission. At the higher-energy region, the ion emission efficiency was found to be enhanced in the photon energy region of 17–28 eV. The difference between the threshold energies of photoion and photoelectron emission and the enhancement of the photoion emission are discussed in conjunction with the valence-band structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351983
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114346
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the first room-temperature low-threshold continuous-wave (cw) operation of Al0.3Ga0.7As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) on Si substrates using techniques of SiO2 back coating and thermal cycle annealing. The all-MOCVD-grown SQW lasers on GaAs/Si with etch pit density of 1.5× 107 cm−2 have threshold current as low as 55 mA (1.41 kA/cm2) under cw at room temperature. The SiO2 back coating is effective to obtain excellent current-voltage characteristics. Thermal cycle annealing is also found to improve the crystallinity of GaAs/Si and to contribute to room-temperature cw operation of the lasers on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103519
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...