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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5629-5629 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave envelope solitons may be generated in thin yttrium iron garnet (YIG) films by microwave pulses if the input power is above some threshold power Pth. Above Pth, single solitons or multiple solitons may be generated. De Gasperis and co-workers have examined Pth versus input microwave pulse length τ without regard to the number of solitons actually generated.1 Kalinikos and co-workers have extracted a soliton number from actual profiles.2 Collectively, these works demonstrate that both the number of solitons and the threshold power for the generation of those solitons depends on τ. In this work, Pth vs τ data are analyzed to obtain a soliton number index N. This index has a quantitative basis in soliton theory and represents a significant improvement over a qualitative profile based determination. Measurements were made on a 7.2 μm YIG film in a microstrip delay line structure. Microwave pulses 5–50 ns wide and at a carrier frequency of 5.78 GHz were used to generate backward volume wave solitons. Deviations from a linear response of the measured peak output power were observed above some Pth for each τ value. Plots of Pth vs 1/τ2 show three linear regimes that correspond to three distinct values of N, N=1 for 5 ns〈τ〈10 ns, N=2 for 20 ns〈τ〈30 ns, and N=3–4 for 30 ns〈τ〈50 ns. Even when experimental conditions mask the number of distinguishable peaks in a given profile, the threshold power may be used to determine the number of solitons present.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4787-4789 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-color photoconductive detectors in the 3–5 μm wavelength range using multilayer undoped n-type Hg1−xCdxTe heterostructures have been demonstrated at room temperature. These heterostructures, consisting of three or four Hg1−xCdxTe layers separated with CdTe layers, were grown by the metal-organic chemical-vapor-deposition (MOCVD) technique. The quality of MOCVD films was verified by near-theoretical values of the minority-carrier lifetime at 300 K, ranging from 0.8 to 4.7 μs depending on the x value. The Hg1−xCdxTe layers are either detectors or filters, and the CdTe layers serve as insulating separators. The concept of using the exponential absorption tails of two Hg1−xCdxTe layers with different band gaps to form an absorption band was verified by the difference in the photoconductive spectral responses between backside and frontside illumination. Two different multilayer heterostructures with two-color peaks at 3.2/3.8 μm and 3.7/4.6 μm, respectively, were studied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave envelope solitons have been observed in yttrium iron garnet (YIG) films for different field configurations and surface pinning conditions. Earlier work on magnetostatic forward volume wave (MSFVW) solitons in YIG films has focused on the break from the low power linear dependence of the output pulse peak power Pout on input pulse power Pin,1 or on the evolution of the shape of the microwave pulse envelope with increasing power.2 In this work, both (1) the nonlinear dependence of Pout on Pin and (2) the shape of the output pulses for MSFVW solitons have been examined over a wide range of power levels and pulse widths. The experiments used 7.2-μm-thick single crystal YIG films with unpinned surface spins. A field of 3744 Oe was applied perpendicular to the plane of a 15×2 mm film sample. Microwave pulses at 5.4–6 GHz, with a width τ of 5–50 ns and peak powers up to 3 W, were launched by a microstrip antenna about 5 mm from one end and picked up by a second, parallel antenna about 5 mm from the other end. Data were processed with a microwave transition analyzer operated in a time domain mode. For a given pulse width, the initial break and nonlinear increase in Pout relative to Pin noted in Ref. 1 is followed by a gradual leveling off in Pout at high power. For a given pulse power above soliton threshold, the Pout versus τ profiles show an initial linear increase which is followed by a decrease and an oscillatory response as multiple solitons are formed. These profiles are directly correlated with the formation of a single soliton pulse which evolves into multiple soliton wave packets with increasing either power or pulse length.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 9617-9623 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report density functional theory calculations, using pseudopotentials with a plane wave basis, of methyl adsorbed on the MoO3(010) surface at 0.5 and 1.0 ML coverages. The MoO3 surface is modeled by a one-layer slab. Methyl is adsorbed most strongly over the terminal oxygen, where methoxy is formed. Over the bridging oxygens, qualitatively different results are obtained depending on the coverage of methyl. At 0.5 ML, methoxy is formed over the bridging oxygens, with an associated relaxation of the surface caused by a repulsion between the methyl and the terminal oxygen. For the 1.0 ML coverage, methyl is not stable and decomposes. Over the asymmetric bridging oxygen, methyl reacts to form formaldehyde and hydroxyl, while over the symmetric bridging oxygen a formyl species and water are produced. The hydroxyl and water are formed via hydrogen transfer to a terminal oxygen. The bonding and reaction of methyl over the various oxygen species are analyzed and discussed using charge density difference plots as well as the crystal orbital overlap projection (COOP). For the 0.5 ML methyl coverage, this analysis shows that the tilting of the terminal oxygen bond weakens this bond slightly. For the 1.0 ML methyl coverage, the COOP plots indicate that the decomposition of methyl over the bridging oxygens is not as stable as methyl over the terminal oxygen because the presence of the carbon fragments affects the electronic structure, and causes a weakening of the Mo–terminal oxygen bond. These results are discussed in the context of partial oxidation reactions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 6854-6860 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report extensive density functional theory calculations, using pseudopotentials with a plane-wave basis, for the properties of the (010) face of molybdenum trioxide (α-MoO3). The surface is modeled by a one-layer slab. Calculated bond lengths compare favorably with experimental measurements. The bonding of the different oxygen species to molybdenum is analyzed using the crystal orbital overlap population. This analysis indicates that the bonding is a combination of ionic and covalent character for all oxygen species. The terminal oxygen exhibits covalent bonding to Mo which is stronger than either of the two bridging oxygens. We also study the adsorption of hydrogen on this surface. Hydrogen is most strongly adsorbed over the terminal oxygen, followed by the asymmetric bridging oxygen, and then the symmetric bridging oxygen. This trend is explained in terms of simple chemical concepts. The inclusion of full surface relaxation is important for even a qualitative description of adsorbate bonding. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of regional science 24 (1984), S. 0 
    ISSN: 1467-9787
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geography , Economics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 25 (1992), S. 4032-4035 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Organometallics 13 (1994), S. 4875-4880 
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2866-2873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monte Carlo simulations of amorphous hydrogenated silicon thin-film growth are carried out to examine the effects of film growth reactions, etching reactions, and surface diffusion on three-dimensional film structure. Although a simulated film contains 1000 silicon atoms or less, the hydrogen content and density can be extrapolated to bulk values. The predicted bulk values of the hydrogen content, 11–44 at. %, and density, 1.8–2.0 g/cm3, are consistent with experimental results. The surface diffusion of silicon-containing species is found to have the most significant effect on the final film properties. A knowledge of the specific chemical mechanism leading to film growth is not assumed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 787-789 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal activation energy (E0) of isolated copper shallow acceptors in bulk Hg0.8Cd0.2Te has been determined using variable-temperature Hall measurements on samples with 77-K carrier concentrations ranging between 1015 and 1017 cm−3. It was found that the decrease of the activation energy with the increasing hole concentration can be adequately described by the screening of the acceptor potential by free carriers. The measured E0 (11.5 meV) also agrees well with that predicted by the effective-mass theory.
    Type of Medium: Electronic Resource
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