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  • 1
    Electronic Resource
    Electronic Resource
    High quality ZnO thin films grown by plasma enhanced chemical vapor deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 501-505 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnO thin films have been grown on a Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C2H5)2] and carbon dioxide (CO2) gas mixtures at the low temperature of 180 °C. The dependence of ZnO thin film quality on the gas flow rate ratio of Zn(C2H5)2 to CO2 (GFRRZC) is studied by using x-ray diffraction (XRD), optical absorption (OA) spectra, and cathodoluminescence (CL) spectra. High quality ZnO thin films with a c-axis-oriented wurtzite structure are obtained when the GFRRZC is 0.33. XRD shows that the full width at half maximum of (0002) ZnO located at 34.42° is about 0.2°. At room temperature, a pronounced free exciton absorption peak around 365 nm is clearly observed. Also, a strong free exciton emission without deep level defect emission is observed around 385 nm, and its temperature dependence is studied from the photoluminescence spectra. These observations indicate the formation of a high quality ZnO film. Additionally, nitridation of the Si surface caused by releasing NH3 plasma into the deposition chamber is an effective way to improve film quality. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415545
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen induced positive charge generation in gate oxides (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1911-1919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates the H2-anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (∼1012 cm−2) of fixed and mobile positive charges are generated at 450 °C. Properties (reactivity, electrical and thermal stability) of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H2-anneal induced positive species and the hydrogenous species released by irradiation or electrical stresses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384860
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  • 3
    Electronic Resource
    Electronic Resource
    Crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 496-499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization kinetics of amorphous Sm8Fe85Si2C5 alloy has been investigated. As the alloy is heated to 900 °C, the crystalline phases of the alloy are composed of α-Fe phase and Sm2(Fe, Si)17Cx. At the beginning of crystallization the activation energy of the α-Fe phase is about 425 kJ/mol, it remains relatively constant as the crystallized fraction of the α-Fe phase is below 70%, and then it declines with increasing the crystallized fraction. When the crystallized fraction of the Sm2(Fe, Si)17Cx is below 50%, the activation energy of crystallization of the phase remains between 518 and 530 kJ/mol, and then decreases with the crystallized fraction. The crystallization behavior of the α-Fe phase and Sm2(Fe, Si)17Cx essentially results in the formation of an α-Fe/Sm2(Fe, Si)17Cx composite microstructure with a coarse grain size in annealed Sm8Fe85Si2C5 alloy, which is attributed to a difficult nucleation and an easy growth for both the α-Fe phase and Sm2(Fe, Si)17Cx in the alloy. Cu and Nb can be used to change the crystallization behavior of the α-Fe phase in the amorphous Sm8Fe85Si2C5 alloy, which is helpful to the formation of the α-Fe/Sm2(Fe, Si)17Cx nanocomposite microstructure with a fine grain size for the α-Fe phase in the alloy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330769
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  • 4
    Electronic Resource
    Electronic Resource
    Electroless polyol deposition and magnetic properties of nanostructured Ni50Co50 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2125-2129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of NiCo films with a nominal composition of 50:50 by a single-step, electroless polyol method was investigated. The film thickness increased with increasing deposition time from 5 to 60 min. Measured film compositions showed Ni: Co stoichiometry for films deposited at 5 and 60 min: In the intermediate range of deposition time used, deviation from nominal precursor concentration to Co-rich compositions was observed as a result of change in deposition chemistry. Through-thickness concentration gradient conceivably existed for thicker films as diffusion for compositional homogenization would not be significant at the deposition temperature. The apparent film density increased as a result of coalescence of adjacent particles with increasing film thickness. The particles consisted of nanostructured crystallites. The crystallite size did not significantly change with increasing deposition time, indicating no grain growth had occurred. Nanoscale particles were also observed among the larger particles in the films. All the films showed in-plane magnetization anisotropy, whereas perpendicular magnetic saturation was only achieved for the film deposited at 60 min. The perpendicular coercivity was higher than in-plane coercivity. Possible explanations are suggested. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305826
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  • 5
    Electronic Resource
    Electronic Resource
    Formation and dissolution of microcrystalline graphite in carbon-implanted GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5662-5665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two sharp bands at ∼1350 and ∼1600 cm−1 were observed in the Raman spectra of carbon-implanted GaN after postimplantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. The observation of these two bands indicates the formation of microcrystalline graphite in C-implanted GaN. Hall measurements demonstrated that some dispersed C in GaN acted as acceptors and played a role in reducing electron concentration and Hall mobility. The facts that in 1100 °C furnace annealing the intensities of these two Raman peaks decreased rapidly to zero and the resistivity increased by 3 orders of magnitude indicate the dissolution of microcrystalline graphite at this temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290462
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of melt-spinning Pr(Fe0.6Co0.4)2 alloys (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6289-6291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pr(Fe0.6Co0.4)2 ribbons were prepared by melt spinning with different wheel speeds from 35 to 45 m/s. Their structure, magnetic properties, and thermal stability are investigated. At a wheel speed of 35 m/s, the ribbon consists of a mixture of Pr(Fe,Co)2 cubic Laves phase and some noncubic phases. An almost Pr(Fe,Co)2 nanocrystalline single phase with a Curie temperature of 305 °C is obtained at a wheel speed of 40 m/s. Except for Pr(FeCo)2 phase a small amount of amorphous phase is observed with increasing wheel speeds to 45 m/s. Pr(Fe,Co)2 phase becomes unstable and decomposes above 770 °C. The resin-bonded Pr(Fe,Co)2 nanocrystalline phase which is obtained at a wheel speed of 40 m/s combines high magnetostriction (λ(parallel)−λ⊥=140 ppm), with significant coercivity, iHc=5 kOe. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372682
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  • 7
    Electronic Resource
    Electronic Resource
    Some features of chaos and oscillations in plasma-filled diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3976-3982 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical background concerning the existence of four dynamical states (stable, oscillatory, chaotic and unstable) in a plasma-filled diode has been investigated in some detail, the results being presented with the help of charge density and other three-dimensional graphs. It has been established that the determining factor is a dynamic ions/electrons charge-balance in the interelectrode space. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289028
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  • 8
    Electronic Resource
    Electronic Resource
    Hot electron generation via vacuum heating process in femtosecond laser–solid interactions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2925-2929 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hot electron generation by the vacuum heating process has been studied in the interaction of 150 fs, 5 mJ, 800 nm P-polarized laser pulses with solid targets. The measurements have suggested that the "vacuum heating" is the main heating process for the hot electrons with high energies. The energy of the vacuum-heated hot electrons has been found to be higher than the prediction from the scaling law of resonance absorption. Particle-in-cell simulations have confirmed that the hot electrons are mainly generated by the vacuum heating process under certain experimental conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371956
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  • 9
    Electronic Resource
    Electronic Resource
    Electron acceleration by static and oscillating electric fields produced in the interaction between femtosecond laser pulses and solid targets (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 1025-1028 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of modest, femtosecond (fs) laser pulses with solid targets is studied with particle-in-cell (PIC) simulations. A bi-temperature distribution of hot electrons is found. The first hot electron temperature can be attributed to the resonance absorption of the laser field, whereas the second hot electron temperature is identified to be due to the combined acceleration by the static electric field in front of the target and by the laser induced oscillating electric field in the thin plasma layer between the vacuum and the target. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1348036
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  • 10
    Electronic Resource
    Electronic Resource
    Crystalline orientation effects on the electronic transport properties of LaMnOy thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4877-4879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial and polycrystalline LaMnOy thin films on a LaAlO3 substrate by the off-axis magnetron sputtering technique and investigated the crystalline orientation effects on the electronic transport properties. Lattice mismatch, crystalline quality, resistivity, resistivity transition temperature Tp, and magnetoresistance (MR) in epitaxial films exhibit crystalline orientation dependence. The largest Tp and MR are observed in the (111) oriented films. In the polycrystalline films, the Tp is smaller than that of the (011)/(111) oriented films but higher than that of the (001) oriented films. The MR increases with decreasing temperature in contrast to that of the epitaxial films in which the MR experiences a peak near Tp. Oxygen annealing decreases MR and resistivity, and increases Tp in the order: (111)〈(011)〈(001)〈(polycrystalline). The above results suggest that the structure and composition of the epitaxial films improve in the order: (001)〈(011)〈(111). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402665
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