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  • 1
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of layer semiconductor p-GaSe doped with Zn (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4125-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc (Zn) is doped into GaSe single crystals grown by the Bridgman technique in a wide range from 0.005 to 0.5 at. % to the stoichiometric melt. Radiative recombination mechanisms have been investigated by using photoluminescence (PL) measurements. The PL spectra in Zn-doped samples at 77 K are dominated by three emission bands at 1.75, 1.63, and 1.27 eV. The 1.63 and 1.27 eV emission bands are enhanced with the increase in the amount of Zn. In addition to the results of Hall effect measurements, it is found that the 1.63 and 1.27 eV emission bands are associated with the acceptor levels at 0.12 and 0.3 eV above the valence band, respectively. For the 1.27 eV emission band, the temperature dependences of the PL intensity, peak energy, and half-width are characterized by the configurational coordinate model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354436
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  • 2
    Electronic Resource
    Electronic Resource
    Hole traps of metastable iron-boron pairs in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2803-2808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole traps of configurationally metastable iron-boron pairs in p-type silicon are studied using deep level transient spectroscopy, thermally stimulated capacitance, and single shot techniques combined with minority-carrier injection. Two levels at EV+0.53 and 0.48 eV are observed as the metastable pairs after the injection at 150 K. The level at 0.53 eV consists of two traps vanishing with different decay rates at around 220 K, while the level at 0.48 eV annihilates with simple exponential form. The decay rate for each trap has a thermal activation energy of ∼0.7 eV and shows a single jump process of interstitial iron from one configuration to another. These new traps of iron-born pairs are discussed with the aid of configuration-coordinate description within the framework of the simple ionic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353056
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  • 3
    Electronic Resource
    Electronic Resource
    Deep impurity levels and diffusion coefficient of manganese in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1440-1445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Manganese-related deep levels in n- and p-type silicon have been investigated by deep level transient spectroscopy and Hall effect. Two electron traps of Ec−(0.12±0.01) eV and Ec−(0.41±0.01) eV, and a hole trap of Ev+(0.32±0.01) eV are found in manganese-doped silicon. The energy levels of these traps correspond to the transitions between four charge states (Mn−, Mn0, Mn+, Mn++ ) of interstitial manganese. An additional donor-type electron trap of Ec−(0.51±0.02) eV is observed in the n-type samples, and the trap can be tentatively assigned to substitutional manganese. Furthermore, an electron trap of Ec−(0.50±0.02) eV is observed for n+p junction samples diffused with manganese in boron-doped p-type silicon. The trap is attributed to the manganese-boron complex, which is formed owing to the pairing reaction of interstitial manganese and substitutional boron. From the investigation of the pairing reaction, the diffusion coefficient DMn of interstitial manganese is determined in the temperature range 14–90 °C. It can be represented by the expression DMn=2.4×10−3 exp(−0.72/kT)cm2 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347285
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characteristics of layer semiconductor p-GaSe doped with Cd (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4686-4688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352765
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  • 5
    Electronic Resource
    Electronic Resource
    Deep levels of vanadium and vanadium-hydrogen complex in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 520-524 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and EC−0.45 eV, and a hole trap of EV+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of EC−0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO3. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352353
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  • 6
    Electronic Resource
    Electronic Resource
    Deep levels of chromium-hydrogen complexes in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3978-3981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of EC−0.22, EC−0.28, EC−0.45, and EC−0.54 eV in chromium-doped samples. The trap of EC−0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175 °C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356018
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  • 7
    Electronic Resource
    Electronic Resource
    Recombination-enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6198-6203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the recombination-enhanced Fe atom jump between the first (1st) and second (2nd) neighbor sites of Fe–Al and Fe–B pairs in Si. We first annealed specimens at 80 °C to generate Fe–acceptor pairs after doping of Fe. Concentrations of the 1st and 2nd neighbor Fe–acceptor pairs were determined by electron-spin-resonance (ESR) measurement after annealing at around 150 K under optical excitation. The concentration of the 1st neighbor pair was decreased and that of the 2nd neighbor pair was increased by the above annealing. Activation energy for the above changes was about 0.11 eV in the case of the Fe–Al pair. This is much smaller than that (0.8 eV) of thermal annealing alone. In the case of the Fe–B pair, the ESR signal of the 2nd neighbor pair could be detected due to annealing at around 160 K under optical excitation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363695
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of layer semiconductor p-GaSe doped with Cu (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4779-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of Hall effect and deep-level transient spectroscopy have been made on Cu-doped p-GaSe. The moderately deep acceptor and shallow acceptor levels located at 0.13 and 0.04 eV above the valence band are obtained from the temperature dependence of the hole concentration. The hole-trapping level at 0.14 eV above the valence band is detected by deep-level transient spectroscopy and shows almost the same position as the moderately deep acceptor level. We find that the shallow acceptor level of 0.04 eV is attributed to Cu atoms, whereas the moderately deep acceptor level of 0.13 eV is governed by the defects or defect complexes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363418
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  • 9
    Electronic Resource
    Electronic Resource
    Impurity levels in layer semiconductor p-GaSe doped with Mn (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impurity levels in Mn-doped GaSe have been investigated by using photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS) measurements. The emission band at 1.82 eV is observed on the PL spectra of the samples doped with Mn of wide range from 0.01 to 1.0 at. %. We find, from the temperature dependences of PL intensity and peak energy, that the 1.82 eV emission band is due to the transition between the conduction band and the acceptor level at 0.32 eV above the valence band. The acceptor level located at about 0.34 eV above the valence band is detected by using HE and DLTS measurements. The dominant acceptor level in the carrier transport shows almost the same position as that of the radiative recombination center. This acceptor level is probably associated with the defects formed by Mn atoms in the interlayer or interstices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357145
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  • 10
    Electronic Resource
    Electronic Resource
    Diffusion of vanadium in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1653-1655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion profiles of vanadium in silicon have been investigated. In the temperature range 950–1200 °C an in-depth profile measurement by deep level transient spectroscopy was used, and in the temperature range 600–800 °C an annealing experiment which employed a technique for profiling the concentration of deep levels within a depletion region was used. From the two kinds of concentration-profile measurements, the diffusion coefficient of interstitial vanadium in silicon was determined, and it is represented by the expression DV= 9.0×10−3 exp(−1.55/kT) cm2 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105154
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