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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 16351-16356 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4971-4975 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation in silicon layers prepared by plasma-enhanced chemical-vapor deposition using silane dilution by hydrogen has been studied by infrared spectroscopy (IR) and elastic recoil detection analysis (ERDA). The large range of silane dilution investigated can be divided into an amorphous and a microcrystalline zone. These two zones are separated by a narrow transition zone at a dilution level of 7.5%; here, the structure of the material cannot be clearly identified. The films in/near the amorphous/microcrystalline transition zone show a considerably enhanced hydrogen incorporation. Moreover, comparison of IR and ERDA and film stress measurements suggests that these layers contain a substantial amount of molecular hydrogen probably trapped in microvoids. In this particular case the determination of the total H content by IR spectroscopy leads to substantial errors. At silane concentrations below 6%, the hydrogen content decreases sharply and the material becomes progressively microcrystalline. The features observed in the IR-absorption modes can be clearly assigned to mono- and/or dihydride bonds on (100) and (111) surfaces in silicon crystallites. The measurements presented here constitute a further indication for the validity of the proportionality constant of Shanks et al. [Phys. Status Solidi B 110, 43 (1980)], generally used to estimate the hydrogen content in "conventional'' amorphous silicon films from IR spectroscopy; additionally, they indicate that this proportionality constant is also valid for the microcrystalline samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6943-6946 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of crystalline silicon samples are measured for temperatures below 1000 K. The optical transitions are analyzed in terms of excitonic and band-to-band transitions. From the modeling of the line shape we are able to determine the fundamental indirect band gap for temperatures up to 750 K. The temperature dependence follows the Varshni equation with Eg(0)=1.1692 eV, α=(4.9±0.2)×10−4 eV/K and β=(655±40) K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 1425-1434 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ground- and excited-state properties of both gas phase and crystalline ruthenocene, Ru(cp)2, are investigated using density functional theory. A symmetry-based technique is employed to calculate the energies of the multiplet splittings of the singly excited triplet states. For the crystalline system, a Buckingham potential is introduced to describe the intermolecular interactions between a given Ru(cp)2 molecule and its first shell of neighbors. The overall agreement between experimental and calculated ground- and excited-state properties is very good as far as absolute transition energies, the Stokes shift and the geometry of the excited states are concerned. An additional energy lowering in the 3B2 component of the 5a1′→4e1″ excited state is obtained when the pseudolinear geometry of Ru(cp)2 is relaxed along the low-frequency bending vibration. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3456-3458 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a simple approach to fabricate buried InGaAs/InP quantum wires with widths down to 15 nm. Combining high resolution electron beam lithography and selective wet chemical etching only the InP cap layer of an InGaAs/InP quantum well is locally removed. InGaAs surface quantum wells are formed in the etched parts of the samples, where the energy band discontinuity of the quantum well is replaced by the high vacuum barrier. Therefore a lateral potential barrier is induced, which confines the carriers to the InP covered wire regions. In addition, the lateral potential can be strongly increased by a selective thermal intermixing step. The luminescence spectra of the wires show significant lateral quantization effects with energy shifts up to 13 meV and high quantum efficiencies up to room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new levitation apparatus coupled to a synchrotron-derived x-ray source has been developed to study the structure of liquids at temperatures up to 3000 K. The levitation apparatus employs conical nozzle levitation using aerodynamic forces to stably position solid and liquid specimens at high temperatures. A 270 W CO2 laser was used to heat the specimens to desired temperatures. Two optical pyrometers were used to record the specimen temperature, heating curves, and cooling curves. Three video cameras and a video recorder were employed to obtain and record specimen views in all three dimensions. The levitation assembly was supported on a three-axis translation stage to facilitate precise positioning of the specimen in the synchrotron radiation beam. The levitation system was enclosed in a vacuum chamber with Be windows, connections for vacuum and gas flow, ports for pyrometry, video, and pressure measurements. The vacuum system included automatic pressure control and multi-channel gas flow control. A phosphor screen coupled to a high-resolution video microscope provided images of the x-ray beam and specimen shadow which were used to establish the specimen position. The levitation apparatus was integrated with x-ray diffractometers located at X-6B and X-25 beamlines at the National Synchrotron Light Source. X-ray structural measurements have been obtained on a number of materials including Al2O 3, Ni, Si, Ge, and other metallic and ceramic materials in the liquid state. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 522-524 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new technique for synthesizing small batches of oxide-based ceramic and glass materials from high purity powders is described. The method uses continuous wave CO2 laser beam heating of material held on a water-cooled copper hearth. Contamination which would normally result during crucible melting is eliminated. Details of the technique are presented, and its operation and use are illustrated by results obtained in melting experiments with a-aluminum oxide, Y–Ba–Cu–O superconductor material, and the mixtures, Al2O3–SiO2, Bi2O3–B2O3, Bi2O3–CuO. Specimen masses were 0.05–1.5 g. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1584-1586 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The midgap level in platinum doped n-type silicon, which was proposed to be the dominant recombination center, is identified as a platinum-hydrogen complex. Hydrogenation of the samples is achieved by wet-chemical etching at room temperature. Defect profiles, determined by deep level transient spectroscopy, clearly associate the level with the concentration profile of atomic hydrogen. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1820-1822 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe a light-induced on–off switching of the selective donor–acceptor pair excitation in bulk-grown semi-insulating GaAs. The spectral dependence of the switching process is related to the metastability of the EL2 defect. In the ground state, this As-antisite related midgap donor compensates the shallow acceptors and is responsible for the semi-insulating properties of the material. The loss of the shallow acceptor compensation, that accompanies the transfer of the EL2 to its metastable state leads to the observed absorption and luminescence quench of the shallow donor–acceptor pairs. We exploit these effects in demonstrating optical data storage in semi-insulating GaAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1379-1381 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Palladium is known to exhibit an acceptor state at EC−0.22 eV in n-type Si and a donor state at EV+0.31 eV in p-type Si. We have identified a third level at EV+(0.140±0.005) eV and attribute it to the double donor state of substitutional Pd. The Pd level positions are very similar to the corresponding levels for Pt. The double donor states of both metals show an electric field dependence of the emission rates and a thermal activation of the hole capture cross sections. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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