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  • 1
    Electronic Resource
    Electronic Resource
    Configurational interference in boundary-value problems governed by the Helmholtz equation (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 829-833 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A rigorous approach is discussed for solving the two-dimensional Helmholtz equation in a multiply-connected domain consisting of a ring of N circles distributed symmetrically within a closed space. The outer boundary has been taken to be such that the system as a whole has N-fold rotational symmetry. The Dirichlet boundary condition has been satisfied exactly at the outer as well as at each of the inner edges, using the addition theorems for the cylindrical Bessel functions in conjugation with the Fourier expansions. Numerical results, showing spatial configurational interference, are presented for the lowest cutoff value of the symmetric mode as a function of separation between centers of two inner circles, in the case N=2 with circular outer boundary. The application of the method to various problems of physics and engineering is enunciated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528405
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    REFLECTION-WINDOW MAPPING OF SHALLOW BEDROCK (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 34 (1986), S. 0 
    Details
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: A field study was undertaken to evaluate the effectiveness of the high frequency seismic reflection technique for mapping of shallow and irregular bedrock. Bedrock reflections were obtained using a hammer source with both in-line and common offset field layouts. The recording equipment included 12-channel enhancement seismographs, 28 Hz vertical geo-phones and a microcomputer. The latter increased the overall versatility of the seismic system.Field sites for this study are typical of the geological settings of the tin mining areas of Malaysia. The topographical ‘lows’ of the irregular bedrock control the localization of tin ore. The subsurface geology consists of a thin low velocity layer (± 300 m/s) overlying the compact overburden (± 1700 m/s) which in turn lies on bedrock.This paper discusses various criteria for designing an optimum window for obtaining usable reflections between the first arrival and the leading edge of the ground roll cone.Detailed mapping of the overburden and the bedrock interface by the reflection method can be useful in delineating areas for exploratory drilling and for optimum planning of mining operations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2478.1986.tb00478.x
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Thermionic emission diffusion model of current conduction in polycrystalline silicon and temperature dependence of mobility'' [J. Appl. Phys. 57, 2793 (1985)] (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1404-1404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337051
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-beam evaporated phosphosilicate glass encapsulant for post-implant annealing of GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4194-4198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam deposited films of phosphosilicate (PSG) have been investigated as dielectrics for the encapsulation of Si-implanted GaAs for the purpose of post-implant annealing. The processing parameters that were optimized included the thickness of PSG film, the substrate temperature, and the annealing time and temperature. PSG films deposited at temperatures ≥300 °C showed no signs of deterioration up to temperatures in excess of 900 °C for 30-min anneals carried out in a forming gas and/or nitrogen ambient. Depth profiles in excellent agreement with the Lindhard–Scharff–Schiott curves were obtained with 1000-A(ring)-thick films when annealed at 850 °C for 30 min. The diffusion coefficient of implanted silicon was found to be an order of magnitude smaller for the PSG films than that for the conventional plasma assisted chemical vapor deposited SiO2 films at 850 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341334
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic behavior of the Co2−xZnxTiO4 and Co2SnO4 systems (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3622-3624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our ac susceptibility (χ) measurements, carried out between 1.7 and 100 K, show five χ peaks, signaling five transition temperatures, in the disordered frustrated spinel ferrite Co2TiO4. This result, in conjunction with the replica symmetric mean field theory of vector spin glasses and earlier magnetization and neutron diffraction studies, indicates a separate freezing of A- and B-site spins. To our knowledge, such a phenomenon has not been observed before. Co2SnO4 and Co1.2Zn0.8TiO4 χ measurements, where three and one χ peaks are respectively observed, support this picture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338692
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of minority-carrier diffusion length in a p-silicon wafer by photocurrent generation method (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3550-3552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondestructive method to determine the diffusion length of minority carriers in a p-silicon wafer is outlined. This novel method is based on creating an accumulation layer on one side and an inversion layer on the other side of the wafer by depositing thin semitransparent layers of high (e.g., palladium) and low (e.g., aluminum) workfunction metals, respectively. The wafer acquires a structure akin to p+-p-n+ and is capable of generating a photocurrent when illuminated. The photocurrent Isc (where sc represents short circuit) as a function of the intensity Pin of a monochromatic radiation incident on the accumulation layer (p+) side of the wafer is measured. The diffusion length L is determined from the slope of the Jsc vs Pin curve. The values of L so determined were compared with that determined from the measurement of spectral response by illuminating the wafer from the inversion layer (n+) side and were found to be in excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337610
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  • 7
    Electronic Resource
    Electronic Resource
    Annealing behavior of ion-implanted Fe in InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1698-1700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of implanted Fe+ in InP is studied using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). Dual implants (275 keV, 1.25×1014 cm−2 and 400 keV, 1.25×1014 cm2) were performed at room temperature (RT) and at 200 °C and then annealed at 725 °C for one hour. TEM reveals a 3100-A(ring) amorphous region in the unannealed RT implant. Significant defect production is observed in this sample at the amorphous-crystalline interface following the anneal. SIMS reveals an Fe pileup at this interface. No such pileup is observed in the samples implanted at 200 °C. The data also suggest an Fe diffusion constant which is lower than typically reported in the literature. The results are contrasted with the SIMS study by M. Gauneau, H. L'Haridon, A. Rupert, and M. Salvi [J. Appl. Phys. 53, 6823 (1982)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336040
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  • 8
    Electronic Resource
    Electronic Resource
    A theoretical model of a photoelectrochemical solar cell (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1570-1577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Schottky barrier theoretical model for explaining the J-V characteristic of a photoelectrochemical solar cell (PESC) has been developed considering the effect of dark current, space-charge recombination, surface states, and detailed charge transfer kinetics at the interface. Both isoenergetic charge transfer and inelastic charge transfers (via surface states) at the interface have been considered and their relative importance are discussed. The theory has been applied to explain the (a) J-V characteristic for n-GaAs/Se2−, Se2−2 junction and (b) Fermi-level pinning observed in GaAs PESC. The inelastic charge transfer via surfaces states has been shown to play an important role in deciding these characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336466
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  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of silicon films as a diffusion mask and encapsulant for InP and GaAs (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3630-3633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined that silicon films have nearly ideal properties for use as a diffusion mask and encapsulation coating for InP and GaAs. The Si films, composed of a single element, are easily and reproducibly deposited by electron beam evaporation at low temperatures. Sharp features can be defined by standard photolithography and freon-plasma etching. The thermal coefficient of expansion of silicon nearly matches that of InP and GaAs so that problems due to film stress are avoided. Additionally, the interaction of Si with InP and GaAs crystals, under severe thermal treatments often used in device fabrication, was found to be negligible. Finally, we found that the Si film acts as a good diffusion mask for Zn which is a common p-type impurity for forming p-n junctions in III-V compounds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335741
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    TRANSCRIPTIONAL CONTROL OF MHC CLASS II ANTIGEN EXPRESSION ON MOUSE T CELL LINES (1986)
    Oxford, UK : Blackwell Publishing Ltd
    International journal of immunogenetics 13 (1986), S. 0 
    Details
    ISSN: 1744-313X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: We have analysed the factors which regulate MHC class II expression in mouse T cell lines. Two such lines, BW 5147 and PLT-24.2, were used in this study. Using 5-azacytidine (5 AzaC) we have shown that hypomethylation of DNA can induce class II antigen synthesis in BW 5147. The expression of class II in PLT-24.2 cells seems to be under a different control mechanism. Southern blot analysis of I-Aβ gene in PLT-24.2 suggests that the expression of class II in this cell line is probably the outcome of a gene rearrangement. We hypothesise that insertion of viral long terminal repeats (LTR) next to the class II genes in transformed T cell lines can act as a promoter for the expression of class II antigens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1744-313X.1986.tb01100.x
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