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  • 1
    Electronic Resource
    Electronic Resource
    Measurements on rotating ion cyclotron range of frequencies induced particle fluxes in axisymmetric mirror plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 2947-2954 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison of phenomenological features of plasmas is made with a special emphasis on radio-frequency induced transport, which are maintained when a set of two closely spaced dual half-turn antennas in a central cell of the Phaedrus-B axisymmetric tandem mirror [J. J. Browning et al., Phys. Fluids B 1, 1692 (1989)] is phased to excite electromagnetic fields in the ion cyclotron range of frequencies (ICRF) with m=−1 (rotating with ions) and m=+1 (rotating with electrons) azimuthal modes. Positive and negative electric currents are measured to flow axially to the end walls in the cases of m=−1 and m=+1 excitations, respectively. These parallel nonambipolar ion and electron fluxes are observed to be accompanied by azimuthal ion flows in the same directions as the antenna-excitation modes m. The phenomena are argued in terms of radial particle fluxes due to a nonambipolar transport mechanism [Hojo and Hatori, J. Phys. Soc. Jpn. 60, 2510 (1991); Hatakeyama et al., J. Phys. Soc. Jpn. 60, 2815 (1991), and Phys. Rev. E 52, 6664 (1995)], which are induced when azimuthally traveling ICRF waves are absorbed in the magnetized plasma column. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872427
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  • 2
    Electronic Resource
    Electronic Resource
    An elliptical wiggler for SPring-8 : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1937-1939 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a study for the realization of an elliptical multipole wiggler to be installed on the pilot beamline dedicated to material science at SPring-8. Such a wiggler should meet the requirements of third generation synchrotron sources (e.g., large horizontal aperture), as it uses a planar structure (two jaws above and below the vacuum chamber). Compared to the APPLE concept proposed by Sasaki, this new wiggler exhibits similar performances: 65% (85%/90%) circular polarization rate can be obtained up to 300 keV (200/150 keV) with high brilliance ((approximately-greater-than)1015photons/s/0.1%/mr2/mm2). Moreover this new design is easier to characterize than APPLE, since the sources of vertical and horizontal magnetic fields are independent. The effects of the magnet interactions (e.g., demagnetization in magnets and the consecutive loss of field) are not considered in the following but should be addressed in a future paper. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145763
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  • 3
    Electronic Resource
    Electronic Resource
    Development of an in-vacuum minipole undulator array for National Synchrotron Light Source In-Vacuum UNdulator (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 18-24 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An in-vacuum minipole (short period) insertion device has been developed in a collaboration between SPring-8 and the National Synchrotron Light Source (NSLS). The magnetic arrays were assembled, field measured, corrected, and vacuum tested by SPring-8 and were installed in an NSLS-developed chamber with mechanical parts in the NSLS X-Ray Ring (E=2.584 GeV) in May 1997 and a successful commissioning of the device was carried out in June 1997. The device is made of permanent magnets with 30.5 periods and a period length of 11 mm. It is designed to produce fundamental radiation at 4.6 keV, and with a modest value of deflection parameter (K=0.7 at 3.3& mm gap) enables higher harmonics to be used as well, for a variety of experiments. A detailed description of the mechanical support and vacuum chamber will be reported elsewhere. We describe technical challenges encountered in constructing this type of device, and present an outline of our collaboration. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148871
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  • 4
    Electronic Resource
    Electronic Resource
    Phaedrus-T probe techniques : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 434-436 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Probe techniques employed in ohmic, rf, and H-mode Phaedrus-T tokamak plasmas are discussed. The floating potentials of nonemitting probes are found to be insensitive to plasma potential fluctuations at the rf frequency. Both Langmuir and emissive probes have been swept. The Langmuir probes were swept into electron saturation where a low-frequency oscillation was sometimes observed. Large probes (biased electrodes) have been used to perturb the plasma into an H mode. The biased electrode I-V characteristics differ from those of nonperturbing Langmuir probes and can be used to help identify the H mode. Probe behavior during the H mode is discussed. Two novel reciprocating probe designs have been developed. The faster of the two achieves average speeds of 5 m/s, which to our knowledge makes it the world's fastest. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146371
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  • 5
    Electronic Resource
    Electronic Resource
    Nitridation process of sapphire substrate surface and its effect on the growth of GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3487-3491 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nitridated layer formed on a (0001) sapphire (α-Al2O3) substrate surface by heating at 1050 °C in ammonia (NH3) gas was analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscope (TEM) and energy dispersive x-ray spectrometry (EDX). Their influence on the growth of GaN in the combined usage of initial nitridation and successive deposition of a buffer layer was examined by AFM observations. The intensity of the N1s nitrogen peak in the XPS rapidly increased with nitridation time, reaching saturation in a few minutes, and then continued to increase gradually. This change was found to correspond to morphological change revealed by AFM observations, that is, from a flat nitridated layer to high-density (109–1010 cm−2) nitridated protrusions. TEM observations and EDX measurements showed that the nitridation forms an amorphous layer consisting of AlNxO1−x. The flat nitridated layer, when combined with a buffer layer, favors two-dimensional growth of a thick GaN layer on it, while the layer with protrusions results in three-dimensional growth. Thus, thick GaN layers with smooth surfaces can be grown by controlling the surface of the nitridated layer, where a crystal-amorphous-crystal growth mechanism is successfully operating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361398
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  • 6
    Electronic Resource
    Electronic Resource
    Erratum: "Nitridation process of sapphirre substrate surface and its effect on the growth of GaN'' [J. Appl. Phys. 79, 3487 (1996)] (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1942-1943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363832
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  • 7
    Electronic Resource
    Electronic Resource
    The energy band alignment of Xc, Γc, and Γv points in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1763-1770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Better carrier confinement in 0.6-μm-band laser diodes can be achieved by incorporating an AlInP layer into the (Al0.7Ga0.3)0.5In0.5P cladding layers. The effectiveness of this heterostructure, though, cannot be analyzed without detailed knowledge of the energy band alignment at the Xc, Γc, and Γv band extrema. We conducted photoluminescence and photoreflectance measurements at 12–100 K on (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP heterostructures (x=0.47–0.61) free from long-range ordering, and analyzed the results to obtain basic data on the alignment scheme. In these measurements we observed the Γc to Γv and the Xc to Γv transitions in bulk Al0.53In0.47P and (Al0.7Ga0.3)0.5In0.5P alloys, the AlxIn1−xP Xc to (Al0.7Ga0.3)0.5In0.5P Γv transition in (Al0.7Ga0.3)0.5In0.5P/AlxIn1−xP superlattices, and the Xc to Γv and to the Γc to Γv transitions in 20-nm-wide AlxIn1−xP layers in (AlyGa1−y)0.5In0.5P/AlxIn1−xP/(AlyGa1−y)0.5In0.5P double heterostructures (x=0.33–0.39, y=0.7–1.0). We found that the energy level of Xc in AlxIn1−xP decreased by 0.09 eV as x increased from 0.47 to 0.61, the Xc of AlxIn1−xP crossed the Γc at 0.340 (±0.008), and the Γv of AlxIn1−xP crossed the Γv of (Al0.7Ga0.3)0.5In0.5P at x=0.47(±0.01). The share of the band offset at Γc for x=0.53 was 75(±3)%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364064
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  • 8
    Electronic Resource
    Electronic Resource
    GaAlAs gain-guided semiconductor lasers with a curved facet (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1667-1669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAlAs gain-guided semiconductor lasers having a curved facet are fabricated by employing reactive ion beam etching. The use of the curved facet permits stabilization of transverse mode in the direction parallel to the junction plane, reduction of astigmatism, and multilongitudinal mode oscillation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98537
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  • 9
    Electronic Resource
    Electronic Resource
    High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2471-2473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10−13 Hz−1 under 3–4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100216
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  • 10
    Electronic Resource
    Electronic Resource
    Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the thickness control of the cladding layer adjacent to light absorbing layers is significantly improved. Results show that the GaAs layer is effective as an etch-stop layer even if the thickness is only 1–2 nm. The total internal loss of the lasers is estimated to be about 20 cm−1 and loss due to the insertion of the GaAs layer is almost negligible. A threshold current of about 50 mA and a stable fundamental transverse mode up to an output power of about 10 mW is attained at room temperature under cw operation. Similar results were obtained when an AlGaAs layer was used instead of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100676
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