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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial characteristics of AlGaAs after in situ electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3105-3111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Regrown/processed AlGaAs interfaces using secondary ion mass spectrometry, cross section transmission electron microscopy (TEM), and reflection high energy electron diffraction have been characterized. Two sets of samples, GaAs/Al0.4Ga0.6As (with GaAs on top) and Al0.4Ga0.6As/GaAs (with Al0.4Ga0.6As on top), are used as starting materials. For the GaAs/Al0.4Ga0.6As samples that are first exposed to atmosphere, the experiment is performed in an integrated processing system where etching and regrowth chambers are linked together by ultrahigh vacuum transfer modules. The etching process includes electron cyclotron resonance (ECR) hydrogen plasma cleaning of GaAs native oxides, ECR SiCl4 plasma anisotropic deep etching into Al0.4Ga0.6As, and an optional, brief Cl2 chemical etching. Regrowth is carried out using solid-source molecular beam epitaxy (MBE). Despite the in situ processing, significant amounts of C, Si, and O impurities at the 10, 5, and 50×1012 cm−2 levels exist at the interfaces. However, the impurity level is one order of magnitude smaller than that in air-exposed, ECR plasma etched and MBE regrown Al0.4Ga0.6As/GaAs of the set 2 samples. As revealed using TEM, isolated small particles (presumably correlated to aluminium oxides) exist at the regrown/processed interface of the set 1 samples, but no other defects such as dislocation are seen. Impurities and defects are mainly caused by the high reactivity of AlGaAs during ECR plasma etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356162
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  • 2
    Electronic Resource
    Electronic Resource
    Coupled resonator vertical-cavity laser diode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3020-3022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of an electrically injected monolithic coupled resonator vertical-cavity laser which consists of an active cavity containing InxGa1−xAs quantum wells optically coupled to a passive GaAs cavity. This device demonstrates modulation characteristics arising from dynamic changes in the coupling between the active and passive cavities. A composite mode theory is used to model the output modulation of the coupled resonator vertical-cavity laser. It is shown that the laser intensity can be modulated by either forward or reverse biasing the passive cavity. Under forward biasing, the modulation is due to carrier induced changes in the refractive index, while for reverse bias operation the modulation is caused by field dependent cavity enhanced absorption. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125220
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Improved optical switching extinction in three-electrode Ti:LiNbO3 directional couplers (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Utilizing three electrodes and three independent voltages in Ti:LiNbO3 directional coupler optical switches, we have achieved significant improvements in switching extinction over the standard uniform Δβ configuration. The reductions in optical crosstalk vary from 3 to 24 dB for both switching states of several fabricated devices. We have observed a bar state extinction of −47.8 dB, which is the largest extinction ratio reported to date. We find that switching measurements are limited by the largest contrast ratio which can be obtained in the optical waveguides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98959
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  • 4
    Electronic Resource
    Electronic Resource
    Modal analysis of a small surface emitting laser with a selectively oxidized waveguide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe studies of an index-guided ∼4×3 μm2 vertical cavity surface emitting laser with a cw, room temperature 133 μA threshold current and 53% slope efficiency fabricated using selective wet thermal oxidation to provide optical and electrical confinement. While the device operates strictly single mode, a large number of transverse modes are evident in the subthreshold luminescence observed in both vertical and lateral directions. Despite the lumped nature of the index region, the transverse mode wavelengths agree very well with those predicted for a conventional distributed waveguide structure. Waveguide dimensions and an effective index step of 2% between the active and cladding region are determined by fitting the modal data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113102
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  • 5
    Electronic Resource
    Electronic Resource
    Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 135-137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112972
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  • 6
    Electronic Resource
    Electronic Resource
    Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2658-2660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel dry process to remove the surface contaminants C, Si, and O from GaAs substrates. This method utilizes an electron cyclotron resonance hydrogen plasma to remove the native oxides, followed by a very brief Cl2 chemical etching of GaAs to further reduce C and Si residues, and a final vacuum anneal. Characterization by secondary ion-mass spectrometry (SIMS) typically reveals the removal of C, Si, and O at the overgrown/processed interface to the levels below the SIMS detection limit. The as-processed GaAs surface, a Ga-stabilized reconstructed (4×6), is atomically smooth, and is as clean as a surface of freshly grown GaAs epilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109277
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    High-temperature operation of periodic index separate confinement heterostructure quantum well laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2784-2786 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature operation of the InGaAs/GaAs/AlGaAs quantum well lasers with an expanded vertical optical mode is demonstrated for the first time using a periodic index separate confinement heterostructure (PINSCH) laser. Continuous wave (cw) operation up to 145 °C is achieved with a coated 3 μm×508 μm PINSCH laser. The measured characteristic temperature (170 K) and external differential quantum efficiency (0.75 mW/mA) are comparable to those obtained in a graded index separate confinement heterostructure laser fabricated at the same time. These results illustrate the excellent capability of the PINSCH laser to compress the transverse beam divergence without sacrificing the electrical carrier confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105859
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  • 8
    Electronic Resource
    Electronic Resource
    Improved AlGaInP-based red (670–690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 329-331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified epitaxial design leads to straightforward implementation of short (1λ) optical cavities and the use of C as the sole p-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115434
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  • 9
    Electronic Resource
    Electronic Resource
    Microstructure of laterally oxidized AlxGa1−xAs layers in vertical-cavity lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 19-21 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the lateral oxidation of AlxGa1−xAs (x=0.98 and 0.92) layers contained in vertical-cavity lasers using cross-sectional transmission electron microscopy. We find a fine-grained (∼4 nm) cubic spinel phase of Al2O3 in both the 2% Ga- and 8% Ga-oxidized layers. The 8% Ga-oxidized layers contract vertically by 6.7% and not the expected 20% for a fully dense Al2O3 layer, with the 2% Ga-oxidized layers showing a similar contraction. We observe a ∼17-nm-thick amorphous interface between the oxidized and unoxidized AlxGa1−xAs layers, which may account for the excellent electrical properties of these devices. We also observe metastable amorphous cavities associated with the moving reaction front. We infer the reaction proceeds from an initial amorphous phase that then transforms to a porous γ-Al 2O3 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118103
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  • 10
    Electronic Resource
    Electronic Resource
    Two-element phased array of antiguided vertical-cavity lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3754-3756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate antiguided coupling of two adjacent vertical-cavity surface-emitting lasers (VCSELs), obtaining a 1×2 phase-locked array at 869 nm. The lateral index modification required for antiguiding is achieved by a patterned 3 nm etch performed between two epitaxial growths. In contrast with prior coupled VCSELs, adjacent antiguided VCSELs can emit in phase and produce a single on-axis lobe in the far field. Greater than 2 mW of in-phase output power is demonstrated with two VCSELs separated by 8 μm. Moreover, phase locking of two VCSELs separated by 20 μm is observed, indicating the possibility of a promising class of optical circuits based upon VCSELs that interact horizontally and emit vertically. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125445
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