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  • 1
    Electronic Resource
    Electronic Resource
    Surface segregation effects of In in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2481-2485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL), secondary-ion mass spectroscopy (SIMS), and cross-sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during molecular-beam epitaxial growth of InAs monolayers between GaAs layers. The InAs growth temperature at which In segregation is detectable depends on the characterization technique used; using PL it is above 420 °C, but from TEM and SIMS it is 420 and 340 °C, respectively. These results highlight the need for complementary information to provide a better understanding of the segregation phenomenon. SIMS data show that the total amount of In segregating and the extent of its distribution both increase with InAs deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354686
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction in secondary ion fogging on photographic plates used in mass spectrography (1972)
    s.l. : American Chemical Society
    Analytical chemistry 44 (1972), S. 1100-1101 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60314a036
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison of electrical defects in Ge+ and Si+ preamorphized BF2-implanted silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3628-3632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon diode structures have been amorphized with 200-keV Ge+ prior to BF2 implantation. Room temperature C-V profiling revealed large concentrations of excess donor levels following epitaxial regrowth at temperatures below 800 °C. This donor formation and the annealing behavior is the same as previously observed in Si+ preamorphized substrates. Deep-level transient spectroscopy further confirmed the similarity in the nature and spatial distribution of the defects produced. The conclusion drawn is that the same fundamental damage-related defects are produced in the tail of the amorphizing implant in both cases. Large leakage current densities in the Ge+-amorphized diodes were attributed to the deep-level donors, and removal of these centers by annealing at 800 °C reduced the leakage current to ∼4×10−6 A/cm2. This current was assumed to arise from the crystallographic defects at the original amorphous/crystalline boundary which, at the ion implantation energies used, were within the zero-bias space-charge layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339266
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature annealing of shallow arsenic-implanted layers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2189-2194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon layers implanted with 10 keV arsenic have been characterized using the differential Hall effect, secondary-ion-mass spectrometry, and Rutherford backscattering. Arsenic has been implanted to doses up to 2×1015 cm−2 and the layers have been annealed for 15 min at temperatures in the range 600–900 °C. The maximum free-carrier concentration and sheet resistance obtainable are 2.8×1014 cm−2 and 320 Ω/(D'Alembertian), respectively, for a dose of 1×1015 cm−2 annealed at 700 °C. There is evidence for both the loss of arsenic into a thin surface layer and the incomplete electrical activation of the arsenic remaining in the bulk. It is proposed that incomplete electrical activation is due to clustering in the amorphous phase during the solid-phase-epitaxial regrowth of the layer rather than clustering in the crystalline phase after the regrowth has occurred.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337979
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  • 5
    Electronic Resource
    Electronic Resource
    Defects and leakage currents in BF2-implanted preamorphized silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3567-3575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose silicon implants have been used to preamorphize the surface of single-crystal silicon prior to the implantation of low-energy BF2. The preamorphization results in shallow junction formation with minimal channeling of the boron, but high concentrations of electrically active defects are formed, leading to excessive reverse bias leakage currents. Measurements of leakage current and deep-level defects indicated that two distinct types of electrically active defects were important: those associated with what are probably complexes or clusters of point defects located near the far end of the range of the implanted silicon, and those associated with extended defects (loops) at the edge of the regrown amorphous region. The former defects were deep-level donors present in high concentrations (〉1017 cm−3) after regrowth of the amorphous layer at 600 or 700 °C and resulted in leakage currents 〉10−4 A/cm2. These centers could be annealed out at 800 °C reducing the leakage current to values between 5×10−8 and 2×10−5 A/cm2 depending upon the relative locations of the extended defects and the metallurgical junction. Measurements and modeling have shown that the location of the band of extended defects is critical in controlling the leakage current and that it will need to be a few hundred angstroms shallower than the junction itself for the associated generation current to be fully suppressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337613
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of shallow (Rp 〈20 nm) As- and B-implanted and electron-beam annealed silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2694-2703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing characteristics of shallow (Rp 〈20 nm) arsenic- and boron-implanted layers were found to be a complex function of the thermal cycle which the sample experienced. Arsenic at 10 keV and boron at 4.5 keV (derived from 20 keV BF+2 ) were implanted in the dose range 1014–1016 cm−2 into (100) Si. The optimal implant doses to maximize conductivity with essentially undiffused layers of device quality material were 2 × 1015 and 1015 cm−2 for As and B, respectively. A comparison of rapid isothermal annealing using the multiple-scan electron-beam annealing method and conventional furnace annealing was made. For arsenic minimum resistivities of about 2 × 10−4 Ω cm were obtained after furnace annealing at 550 °C for 15 min or electron-beam annealing with a peak temperature between about 700 and 1100 °C during a 100 ms (or 1 s) anneal. For boron, electron-beam annealing for 100 ms (or 1 s) with a peak temperature of between ∼700 and 1000 °C produced a resistivity of 7 × 10−4 Ω cm which compared with 1.2 × 10−3 Ω cm following conventional furnace annealing. High-resolution SIMS showed that peak temperatures of up to about 1000 and 1100 °C for B and As layers, respectively, may be reached with essentially no diffusion. An extension of diffusion theory applicable to conventional furnace annealing of deeper implant gave results in accord with SIMS profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336977
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular Genetics of Human Hemoglobin (1976)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 10 (1976), S. 157-178 
    Details
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ge.10.120176.001105
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  • 8
    Electronic Resource
    Electronic Resource
    Solubility of hydrogen in silicon at 1300 °C (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1612-1614 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of hydrogen in boron doped Czochralski silicon heated to 1300 °C in H2 gas has been studied. The anneal was terminated by a rapid quench to room temperature giving rise to an unknown hydrogen-related defect as well as H-B close pairs. All the hydrogen in the crystal can be driven into such pairs by a low temperature (200 °C) anneal, after which the values of [H-B] [D-B] are in agreement with the total deuterium concentration, measured by secondary ion mass spectrometry. The estimated solubility of 1.5×1016 cm−3 is not affected by the isotopic mass of the hydrogen nor by the presence of boron or oxygen impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108602
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for hydrogen accumulation at strained layer heterojunctions (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 926-928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of hydrogen into strained InxGa1−xAs/GaAs quantum wells results in the formation of shallow, H-related radiative states which compete with, and quench, the intrinsic band-to-band luminescence. By comparing the photoluminescence data obtained from hydrogenated material with secondary ion mass spectroscopy profiles from deuterated material, it is possible to deduce that the H-related radiative states are associated with H which is accumulated at the well interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110775
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  • 10
    Electronic Resource
    Electronic Resource
    DISORDERED GLOBIN SYNTHESIS IN THALASSEMIA (1969)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 165 (1969), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1969.tb27795.x
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