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  • 1
    Electronic Resource
    Electronic Resource
    Influence of the electron beam evaporation rate of Pt and the semiconductor carrier density on the characteristics of Pt/n-GaAs Schottky contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6172-6176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier diodes (SBDs) were fabricated on epitaxially grown n-GaAs materials, with different free carrier densities, by electron beam (e-beam) evaporation of Pt at various rates. The quality of the SBDs was evaluated by standard current-voltage (I-V) measurements, while the defects introduced during e-beam evaporation were characterized by deep level transient spectroscopy (DLTS). The results showed that if the GaAs was shielded during Pt deposition from stray electrons originating at the e-beam filament, high quality SBDs were formed. However, if the GaAs was not shielded during deposition, the quality of the diodes was poor and the degree to which their characteristics deviated from the ideal case increased as the total electron dose reaching the substrate increased (for slow evaporation rates) and as the free carrier density of the GaAs increased. DLTS revealed that several surface and subsurface defects were introduced during metallization without the electron shield and it is shown that these defects are responsible for the poor device quality. The nature of some of these defects depended on the free carrier density of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350426
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  • 2
    Electronic Resource
    Electronic Resource
    Modified sample holder for low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2101-2102 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This note describes the design, construction, and test results of a modified sample holder used during low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements. This improved sample holder allows temperature scan rates of up to 6 K/min with a temperature shift of less than 1 K. High electrical isolation makes this sample holder also suitable for low-temperature current-voltage and capacitance-voltage measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143175
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Construction of a low-cost, servo-controlled, spark-erosion cutter (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3552-3555 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-cost, spark-erosion cutter for stain-free cutting of conducting materials in samples of specific shapes, has been built. A servo system monitors the distance between tool and sample, and advances the tool towards the sample when necessary in a controlled way. Advancement rates of between 0.4 and 3.0 mm/h are presently used but with other gear ratios for the motor it could be changed to almost any practical value. Cutting rates of typically 1–1.5 mm/h are used. The cutter works quite well, is within the financial reach of smaller laboratories, and can be built in a local machine shop.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140509
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4339-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped n-GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinical p(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that four electron traps, En1, En2, En4, and En5, with energy levels at 0.04, 0.14, 0.36, and 0.66 eV, respectively, below the conduction band were created during neutron radiation. Their introduction rates varied from 1 cm−1 for the En1 to 11 cm−1 for the En5. It was found that the En1, En2, and En4 defects have DLTS "signatures'' similar to the E1, E2, and E3 point defects introduced during high energy electron irradiation, indicating their point defect nature. The En5 has a very large capture cross section, its emission rate exhibits a strong electric field dependence, and there are indications that it has a band-like energy distribution, that results in a broad DLTS peak. We speculate that this trap is related to the presence of extended defects in the neutron irradiated GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354399
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  • 5
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5576-5578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially grown n-Si was bombarded with low-energy (1 keV) He ions. Deep level transient spectroscopy revealed that this introduced four prominent defects with energy levels at 0.14, 0.20, 0.30, and 0.55 eV, respectively, below the conduction band. The electronic properties and annealing behavior of these defects are different to those of the main defects, namely, divacancies (V2) and vacancy-phosphorous centers, observed after 5.4 MeV He-ion bombardment of the same material. We propose that, except for the defect with an energy level at Ec−0.14 eV, the defects introduced by 1 keV He-ion bombardment of n-Si may be related to: (1) vacancy clusters larger than divacancies, or (2) incorporation of He and H into V2 or higher-order vacancy clusters. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367395
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of He-plasma processed n-GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1973-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employed capacitance-voltage (C–V) measurements to determine the free-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the electrical properties of the plasma-induced defects. C–V measurements indicated that He-plasma processing resulted in a strong carrier reduction up to 1 μm below the GaAs surface. DLTS showed that He-ion processing introduced several prominent defects, including the frequently studied radiation-induced defects E1 and E2, associated with VAs. Current-voltage measurements demonstrated that the He-plasma processing inhibits the fabrication of high barrier Schottky diodes on n-GaAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368329
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scandium (Sc) Schottky barrier diodes were fabricated by electron-beam (EB) deposition on epitaxially grown p-Si1−xGex strained films with x=0.0–0.2. The EB deposition was performed either with or without shielding the Si1−xGex samples. The barrier height and the defects introduced during EB deposition have been investigated as a function of Ge composition. Our results showed that the barrier height decreased as the band gap changed with increasing Ge content. The defect properties were studied with deep-level transient spectroscopy. The most prominent defect observed in p-Si was a hole trap H(0.53) at Eν+0.53 eV. Increasing the Ge content led to a decrease in the activation energy of this defect and this decrease followed the same trend as the band-gap variation, suggesting that the main defect detected in p-Si1−xGex is the same as that observed in p-Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120967
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3178-3180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6–8×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10−15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121585
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of defects in SiCl4 plasma-etched n-GaAs and Pd Schottky diodes fabricated on it (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 668-670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employed deep-level transient spectroscopy to determine the electrical properties of defects introduced in epitaxially grown n-GaAs during dry etching in a SiCl4 plasma at different rf powers and plasma pressures. We found that SiCl4 etching introduced two prominent defects, one of which is metastable. Current–voltage measurements demonstrated that high barrier Schottky barrier diodes can be fabricated on SiCl4-etched n-GaAs surfaces for all power and plasma pressure conditions investigated. The defect concentration decreased and the diode quality improved when etching at lower rf power and higher plasma pressure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119824
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  • 10
    Electronic Resource
    Electronic Resource
    Comparison between ruthenium-based and other ohmic contact systems to p-type GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1933-1935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conventional furnace annealed Ru/Au ohmic contact system on p-GaAs has been investigated. Electrical and morphological characteristics of this contact system were compared with other systems such as Cr/Au, Ti/Pt, and Mn/Au. The Ru/Au contact system has been shown to have superior surface morphology and a comparable specific contact resistance value, even after annealing at 485 °C. The advantages of utilizing Ru as contact material to GaAs are that it forms high quality, thermally stable Schottky contacts to n-GaAs and thermally stable ohmic contacts with low specific contact resistance to p-GaAs. This dual nature of Ru contacts to GaAs makes them extremely important for future use in devices such as heterojunction bipolar transistors (HBTs) and solid state lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108493
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