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  • 1
    Digitale Medien
    Digitale Medien
    Ultraviolet-infrared optical properties of highly (100)-oriented LaNiO3 thin films on Pt–Ti–SiO2–Si wafer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2699-2702 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical constants of highly (100)-oriented LaNiO3 thin films on Pt(111)-Ti–SiO2–Si substrate derived by metalorganic deposition have been obtained using spectroscopic ellipsometry techniques in the wide wavelength range from ultraviolet to far infrared. In fitting the dielectric functions of LaNiO3, two harmonic oscillators are observed, one is believed to come from the valence–conduction interband transition and the other is attributed to the transition from a donor band to the conduction. Simultaneously the frequency of plasmon is also obtained, which results from the strong electron–electron interaction. Based on these optical and electrical properties, a promising application of LaNiO3 thin films in infrared microsensors has been proposed. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394903
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  • 2
    Digitale Medien
    Digitale Medien
    High-Tc ramp-type Josephson junctions with a continually graded Y1−xPrxBa2Cu3Oy barrier (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3101-3103 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-Tc Josephson junctions with a graded barrier have been prepared by using a composite target. Such a barrier is synthesized by utilizing Y1−xPrxBa2Cu3Oy with a continually graded concentration of Pr, in which no lattice mismatch and other incompatible problems take place. The structural interfaces are absent in the weak link region and Josephson coupling occurs at the naturally formed superconducting/normal interfaces within the Y1−xPrxBa2Cu3Oy layer. Thus, it can significantly enhance the reproducibilty and performance of these junctions. The temperature dependences of the barrier thickness and Josephson were also studied.© 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1414295
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  • 3
    Digitale Medien
    Digitale Medien
    Infrared optical properties of LaNiO3–platinized silicon and PbZrχTi1−χO3–LaNiO3–platinized silicon heterostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 793-795 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using infrared spectroscopic ellipsometry, the optical constants of LaNiO3 thin films on Pt(111)–Ti–SiO2–Si substrates are obtained in the 2.5–12.6 μm range, in which the infrared optical constants decrease when the annealing temperature increases from 600 to 650 °C. At the same time, the infrared optical properties of PbZrχTi1−χO3(PZT) thin films with χ=0.3 and 0.5 on LaNiO3–Pt–Ti–SiO2–Si substrates are simultaneously studied with respect to annealing temperatures. The infrared optical properties are associated closely with the grain size and crystallographic orientation of the films induced by annealing temperature, combined by the particular substrate. For the Ni–PZT–LaNiO3–Pt multilayer heterostructures, the infrared absorptance better than 99% can be achieved for PZT pyroelectric thin film infrared microsensors. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1347403
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  • 4
    Digitale Medien
    Digitale Medien
    PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3476-3478 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 (PZT/LSCO) heterostructures have been grown directly on (100)Si by chemical solution routes. Field-emission scanning electron microscopy and x-ray diffraction analysis show that PZT and LSCO thin films are polycrystalline and entirely perovskite phase. PZT thin films grown on LSCO thin films showed no preferential orientation and excellent ferroelectricity. The remnant polarization Pr is about 22.8 μC/cm2 and the coercive field Ec is about 95 kV/cm at an applied electric field of 400 kV/cm. The ferroelectric capacitor has been fabricated and showed no polarization fatigue after 3×109 fatigue cycles. The Pt/PZT/LSCO capacitor is suitable for nonvolatile random access memory application. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1419234
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  • 5
    Digitale Medien
    Digitale Medien
    Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2548-2550 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: From the capacitance–voltage dependence of Pt/PbZr0.5Ti0.5O3/Pt capacitors, we mathematically separated the capacitance into two parts corresponding to two regions of the samples, the uniform electric-field region and the nonuniform region. They are correlated with the bulk ferroelectric film region and the Pt/PbZr0.5Ti0.5O3 Schottky barrier interface region, respectively. The calculations based on the in-series capacitor model show a slight decrease of dielectric permitivity for the fatigued bulk films. By assuming a much smaller dielectric permitivity of the interface region than that of bulk films, it was found that the interface capacitance decreased remarkably compared with that of the bulk ferroelectric film after fatigue. This decrease was attributed to the lowering of ferroelectricity in the interface layer, which suggests that the fatigue is mainly an interface state controlled process. The asymmetricity in the interface capacitance–voltage curve is attributed to the different defect concentration levels in the top and bottom interface regions. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1367301
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  • 6
    Digitale Medien
    Digitale Medien
    The equilibrium configuration of rapid rotating compact stars and some gravitational effects
    Amsterdam : Elsevier
    Chinese Astronomy and Astrophysics 10 (1986), S. 278-286 
    Details
    ISSN: 0275-1062
    Schlagwort(e): Pulsars - Hydrodynamics - Relativistic Effects
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0275-1062(86)90017-2
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  • 7
    Digitale Medien
    Digitale Medien
    Relationship between vitamin D receptor gene polymorphism and periodontitis (2002)
    Oxford, UK : Munksgaard International Publishers
    Journal of periodontal research 37 (2002), S. 0 
    Details
    ISSN: 1600-0765
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Recent studies have shown that vitamin D receptor (VDR) gene polymorphism had regulatory effects on bone mineral density (BMD) and bone turnover. The VDR gene has also been indicated as a candidate gene for the susceptibility of osteoporosis. However, it is unclear whether VDR genotypes could be associated with alveolar bone loss of patients with periodontitis, or whether vitamin D receptor gene could be a candidate gene for susceptibility to periodontitis. The purpose of this study was to answer these two questions. Methods: Twenty-four cases of adult periodontitis (AP), 37 cases of early onset periodontitis (EOP) and 39 healthy controls were recruited for the study. Individual samples of venous blood and DNA were obtained from each subject. Genotypes of the TaqI VDR gene were determined by PCR and TaqI restriction endonuclease digestion. Results: One out of 24 AP patients, nine out of 37 EOP patients and two out of 39 healthy controls were detected with Tt genotype, while the rest had the TT genotype. The detected frequency of Tt genotype was significantly higher in EOP patients (24.3%) than in AP patients (4.2%) and healthy controls (5.1%). The frequency of t allele was also significantly higher in EOP patients. There was no statistical difference in the distribution of TaqI VDR genotypes between AP patients and healthy controls. The study suggests that Tt genotype might be a risk indicator for the susceptibility to EOP. Carriage of the allele (t) of the TaqI VDR gene may increase the risk of developing EOP.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1034/j.1600-0765.2002.01605.x
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  • 8
    Digitale Medien
    Digitale Medien
    Sources of economic growth and structural change - A revised approach
    Amsterdam : Elsevier
    Journal of Development Economics 38 (1992), S. 383-401 
    Details
    ISSN: 0304-3878
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Politikwissenschaft , Wirtschaftswissenschaften
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3878(92)90006-U
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