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  • 1
    Electronic Resource
    Electronic Resource
    Adhesion between Te-based alloy films and fluorocarbon sublayers during the ablative hole opening process (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359011
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetoresistance, Hall effect, and thermoelectric power in spin valves (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5927-5932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Comparison of the magnetoresistance (MR) on two groups of spin-valve multilayers, NiO/NiFe/Cu/NiFe/Cu/NiO and NiO/NiFe/Cu/NiFe/Cu, has been made in order to investigate the possibility of the enhanced specular scattering at NiO/metal interface. No clear difference in MR between the two systems has been found, suggesting that the enhancement of specular scattering at interfaces is not the origin of the large MR. For the field direction almost perpendicular to the plane, we found a sensitive angular dependence of MR along with a large unidirectional anisotropy. To sort out any specific characteristics of the spin-valve system compared to the multilayers, thermoelectric power and Hall effect have been investigated for the first time. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367457
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of LiNbO3-LiTaO3 thin films on Al2O3 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2989-2993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of LiNbO3 and LiTaO3 were grown on sapphire substrates by the rf-magnetron sputtering method. Structural characterization was made by several spectroscopic measurements: x-ray diffraction, Raman scattering, and optical absorption. We obtained epitaxial thin films with lattice-mismatched strained layers, without misfit defects which are usually created at the interface. Impurity-ion (Nd3+ and Cr3+) doped films were also grown; these films had larger refractive indices than the pure films. Furthermore, the heteroepitaxial thin films of up to 10 alternating LiNbO3/LiTaO3 layers were successfully grown, and their periodic structures were studied by optical second-harmonic generation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339385
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  • 4
    Electronic Resource
    Electronic Resource
    In situ observation of silicon hydrides on Si(100) surfaces during synchrotron-radiation-stimulated Si2H6 gas source molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon hydrides (SiHn) on the Si(100) surface during synchrotron-radiation (SR) stimulated Si2H6 gas source molecular beam epitaxy has been observed in situ at low temperatures (≤400 °C), by means of infrared reflection absorption spectroscopy using CoSi2 buried metal layer substrates. At high temperatures (400 °C, 370 °C), SiH is a dominant surface species, while with temperature decrease from 275 to 50 °C, the number of SiH decreases, and, on the other hand, SiH2 and SiH3 appear and increase. This result explains the change of reflection high-energy diffraction pattern from 2×1 to 1×1. The SiH in the bulk network has not been observed. SR irradiation on the film at 140 °C after deposition shows that SiH2 and SiH3 are easily decomposed to SiH and that SiH decomposes much more slowly than SiH2 and SiH3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114346
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  • 5
    Electronic Resource
    Electronic Resource
    GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2196-2198 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of GaN was performed by low-pressure metalorganic vapor phase epitaxy using a mask-patterned GaN epitaxial layer on a (0001) sapphire substrate. GaN hexagonal microprisms of 5–16 μm in diameter, with smooth vertical facets and no ridge growth, were fabricated on a (0001) sapphire substrate. This vertical {11¯00} facet of GaN was parallel to a {112¯0} face of the sapphire substrate. Both the use of an epitaxial GaN layer on the sapphire substrate and low working pressure contributed to obtaining smooth top and vertical facet surfaces. Also, the stripe structures of GaN were obtained that had a rectangular cross section. Moreover, the selection of the mask-patterning direction was found to be important because of the 30° rotation of the crystallographic orientation between the GaN layer and the sapphire substrate. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119379
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  • 6
    Electronic Resource
    Electronic Resource
    Time-differential perturbed-angular-correlation and emission Moessbauer studies on 99Ru dispersed in YBa2Cu3O6.8 and YBa2Cu3O6 (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 10629-10634 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100026a029
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  • 7
    Electronic Resource
    Electronic Resource
    Free volume and physical aging of poly(vinyl acetate) studied by positron annihilation (1989)
    s.l. : American Chemical Society
    Macromolecules 22 (1989), S. 2302-2306 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00195a052
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation and properties of III-V nitride thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2984-2988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of III-V nitride semiconductors (AlN, GaN, InN), mixed-crystalline films (AlxIn1−xN), and multilayered films (GaN/InN)n were grown by rf magnetron sputtering at low substrate temperatures below 500 °C. These films were characterized by x-ray diffraction, Raman scattering, optical absorption, and electrical measurements; it was proved that they have high crystal quality comparable to the previously reported data obtained by other growth methods. Dependence of the band-gap energy of AlxIn1−xN on composition x was determined. Multilayered films of (GaN/InN) were prepared for the first time; these films showed the characteristic diffusion property to make an ordered-alloy superlattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344181
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  • 9
    Electronic Resource
    Electronic Resource
    Definite accumulation of enzymatically under-glycosylated IgA1 in rat glomeruli (1999)
    Melbourne, Australia : Blackwell Science Asia Pty. Ltd.
    Nephrology 5 (1999), S. 0 
    Details
    ISSN: 1440-1797
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1440-1797.1999.00088.x
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  • 10
    Electronic Resource
    Electronic Resource
    MORPHOLOGICAL STUDIES RELATING TO THE FRACTURE STRESS AND FRACTURE TOUGHNESS OF SILICON NITRIDE (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— Microstructure and mechanical properties of HP (Hot Pressed), HP/GP (Gas Pressed), and HP/HIP (Hot Isostatic Pressed)—Si3N4 are studied using scanning electron microscopy, bending tests and the indentation fracture method. The grain diameter distribution is analyzed to clarify the relationship between microstructure and mechanical properties; and also the bending strength and fracture toughness. It is shown that bending strength increases with decreasing grain diameter. The results also show that a Hall—Petch type of relationship is obtained between grain diameter and fracture strength. The fracture toughness shows a linear relationship with 〈inlineGraphic alt="inline image" href="urn:x-wiley:8756758X:FFE829:FFE_829_fu1" location="image_n/FFE_829_fu1.gif" extraInfo="missing"/〉, where σF= bending strength, β= a proportionality factor and da= average grain diameter, and is closely related to the aspect ratio of Si3N4 grains. It is concluded, from the morphological analysis, that a microstructure composed of Si3N4 grains, with both a small grain diameter and a large aspect ratio, is effective in improving both the fracture strength and fracture toughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1997.tb01527.x
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