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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molybdenum (Mo) doped vanadium dioxide thin films were synthesized using a Mo striped vanadium (V) target during pulsed laser ablation process. The film structure was characterized by high resolution x-ray diffraction, x-ray rocking curve and Rutherford backscattering/channeling measurements. The results show that the full width at half magnitude of the x-ray rocking curve is as narrow as 0.0074°, comparable to that of the (0001) sapphire substrate, 0.0042°, in this study. The ratio of the aligned-to-random backscattered yield reaches 5%, implying that the growth is that of the single crystalline epitaxy. The result of angular scans for both V and Mo atomic channelings reveals that Mo atoms successfully take sites of the V sublattice as a substitutional dopant. It has been noted that the degradation of the phase transition properties of the film upon doping is closely related to the conductivity in the semiconductor phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5036-5038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variation of the switching field of the pinned layer (PL) magnetization in NiO based spin valves was observed as a function of the rate of variation of the applied field. This phenomenon was characterized at low frequencies (0.4–120 Hz) using quasistatic magnetoresistance (MR) transfer curve testing and measurements of the relaxation of the resistance around the quasistatic switching field of the pinned layer (10−1–105 s). The influence of temperature was investigated between room temperature and 125 °C. The relaxation data were fit using a model based on an Arrhenius law thermal activation with a single relaxation time. The variation in the switching field of the pinned layer as a function of the applied field rate was compared to the Kurkijärvi model. The fit parameters in both models are the energy barrier height and the thermally activated volume of nucleation. The parameters derived from both types of experiments agree remarkably well. The understanding of this low frequency magnetic behavior of spin valves allows one to gain insight into the long-term relaxation of the magnetization of the PL in MR readback heads, as well as into the magnetic response of this layer to very short (ns) pulses of field or high frequency (100 MHz) excitations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Some diagnostic components in ITER will be subject to high levels of radiation (neutrons and gammas) and changes in their physical properties can result. During the ITER EDA an extensive range of tests on relevant materials, e.g., window materials, metals, and insulators, have been carried out and the changes in their physical properties have been measured. The effects examined include radiation induced electrical damage (RIED) and radiation induced conductivity (RIC) in potential insulators; radiation induced absorption and radio luminescence in potential optical materials; and changes to the reflectivity and surface properties of bulk metal mirrors. The results give a database of information which is of use to the designers of ITER diagnostic systems. Recent and planned work is concentrating on the testing of diagnostic prototypes in relevant radiation fields. The results obtained thus far will be summarized and the planned work outlined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2281-2285 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We introduce a magnetic force controlled atomic force microscope (AFM) and point contact probe for use in ultrahigh vacuum and describe how our technique can significantly enhance the current capabilities of scanning probe microscopes. The instrument is specially designed to provide quantitative information on the nature of the tip-surface interaction. Forces are applied directly to magnetic material deposited behind the AFM tip via a current carrying coil. Oscillating the applied force and measuring the resulting displacement amplitude gives a continuous measurement of the absolute force gradient or contact stiffness. From this measurement the contact area or effective interaction area can be calculated for clean surfaces, thus eliminating the problems of unknown resolution and also facilitating the study of conduction and mechanical properties of small volumes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact storage ring has been developed for industrial research such as x-ray lithography and material analysis. This machine is of a racetrack type with two superconducting bending magnets and only two normal conducting quadrupole magnets. The circumference is as short as 9.2 m. One quadrupole magnet per cell contributes to making the smaller machine. The injector is a synchrotron, and a full energy injection of 600 MeV is performed. The bending magnets excite a field of 3.5 T, and are operated in a persistent current mode. A decrease in a coil current is ΔI/I〈3×10−3/year. The helium consumption is as low as 2 l/h for two magnets. An iron shield of the magnet decreases a leakage flux to a terrestrial level at a point 3 m from the magnet. A beam current of 380 mA has been stored with no beam instability in spite of there being no correction of the chromaticities. Beam emittances were obtained from measured beam sizes and were in good agreement with calculated values. The coupling coefficient εy/εx is calculated as around 0.04. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Beamline BL-NE1B has been constructed at the 6.5-GeV TRISTAN accumulation ring (AR) for applications of circular polarization in the soft x-ray region. Circularly polarized soft x rays are produced by a helical undulator operation mode of an insertion device, EMPW#NE1. The fundamental harmonic peak can be tuned from 0.25 to 2 keV. The NE1B beamline is equipped with a vertical-dispersion spherical-grating monochromator using the Rowland mounting. A monochromatized circularly polarized photon flux higher than ∼1011 photons/s has been obtained over an energy range from 0.25 to 1.25 keV with an energy resolution (E/ΔE) of around 1500–300. An energy resolution of about 5000 has been achieved at 400 eV with slit widths of 10 and 10 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4488-4490 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quenching phenomenon in Mott-type hopping conduction below 125 K has been observed in As+-ion-implanted semi-insulating GaAs. The crystallinity of the implanted layer was evaluated using Rutherford backscattering and Raman scattering methods. The hopping conduction was observed in the as-implanted and annealed samples. The as-implanted layer was amorphous, while the annealed layers remained crystalline, consisting of a disordered structure with a displacement fraction of ∼1021 cm−3. In the samples annealed at 500 °C, it is suggested that some of the As precipitates are located on Ga sites, leading to the disappearance of the A1 g Raman active mode of the As clusters. The hopping conduction was photoquenched as the defect concentration reached ∼6×1017 cm−3, indicating the regrowth of the AsGa antisite defects as a main component of EL2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4884-4886 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recording characteristics of Co-γFe2O3 perpendicular magnetic recording hard disk media were investigated. Sliding contact recording was performed to evaluate the intrinsic high-density recording performance of the media with using a metal-in-gap-type ring head. The half-voltage density D50 of 176 kFRPI and low-density reproduced voltage Ep of 143 nVp-p/[turn μm (m/s)] were obtained for the optimal medium whose Co-γFe2O3 layer thickness was 0.13 μm and perpendicular coercivity was 1800 Oe. The pass wear durability test was performed at 2 m/s, or at a disk rotation of 830 rpm. The reproduced voltage did not decrease with time, and scratches and damage were not observed on the tested track even after 18 000 000 passes. The Co-γFe2O3 medium is one of the candidates for ultrahigh-density recording media because of its specific advantages; superior high density recording performance and hardness tolerable for sliding contact use. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4896-4898 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sputtering deposition using an electron cyclotron resonance (ECR) microwave plasma was tried to use in the fabrication of the Co–Cr perpendicular magnetic recording media. As the Ar sputtering gas pressure increased from 4×10−2 to 8×10−2 Pa, the Co(002) x-ray diffraction peak intensity increased and the half-value width of the rocking curve Δθ50 decreased. This result implies that Co–Cr films with high perpendicular orientation and good crystallinity are achieved at high Ar gas pressure. The Co–Cr films deposited at a target to substrate distance of 230 mm had a good preferred crystal orientation (Δθ50 less than 4°), high perpendicular magnetic anisotropy (Hk higher than 4 kOe), and high perpendicular coercivity over 1400 Oe even though the Co–Cr thickness is as small as about 50 nm, and no underlayers were introduced. Thus, the ECR sputtering has high potential in the deposition of the Co–Cr films for ultrahigh density recording media. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4696-4698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new scanning magnetic microscopy that uses commercial magnetoresistive (MR) record/playback heads as sense probes. A high-resolution, linearized positioning stage is used to raster scan a magnetic sample with respect to the MR head while the head is in physical contact with the sample. An upper bound on the spatial resolution of the scanning magnetoresistance microscope (SMRM) is 100 nm in the "downtrack" direction and 1–2 μm in the "crosstrack" direction of the head. Magnetic force microscopy has better spatial resolution than SMRM, but SMRM gives a more quantifiable signal since the MR head response can be calibrated in a uniform external field. Furthermore, SMRM has the unique ability to apply localized fields to the sample via the inductive write element. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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