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  • Articles: DFG German National Licenses  (217)
  • Electronic Resource  (217)
  • 11
    Electronic Resource
    Electronic Resource
    Magnetic studies of Ce4+ compensated Co-doped yttrium iron garnet thin film grown by chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 953-956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low pressure metalo-organic chemical vapor deposition (LPMOCVD) technique to form Co2+ and Ce4+ doped yttrium iron garnet (Y3−xCexFe5−xCoxO12: Co,Ce:YIG) films is described. A large concentration of Co2+ doping with x=0.3–0.7 results in uniaxial anisotropy perpendicular to the plane of the film with high coercivity values and sufficiently high saturation magnetization values. This has been possible by an alternate doping scheme where commonly used compensator, Ge4+ at Fe3+ sites has been replaced by a new compensator Ce4+ at Y3+ sites in the Co-doped YIG films. The structural and compositional aspect of stabilized garnet phase in Co2+,Ce4+:YIG thin films and optical, thermomagnetic and magnetic hysteresis properties are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360877
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  • 12
    Electronic Resource
    Electronic Resource
    Granular giant magnetoresistive materials and their ferromagnetic resonances (abstract) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6823-6823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnetic resonance (FMR) can reveal important information on the size and shape of the ferromagnetic particles which are dispersed in granular giant magnetoresistive (GMR) materials. We have investigated the FMR spectra of three different types of granular GMR material, each with different properties: (1) melt-spun ribbons of Fe5Co15Cu80 and Co20Cu80, (2) thin films of Co20Cu80 produced by pulsed laser deposition, and (3) a granular multilayer film of [Cu(50 A(ring))/Fe(10 A(ring))]×50. We interpret the linewidth of these materials in as simple a manner as possible, as a "powder pattern'' of noninteracting ferromagnetic particles. The linewidth of the melt-spun ribbons is caused by a completely random distribution of crystalline anisotropy axes. The linewidth of these samples is strongly dependent upon the annealing temperature: the linewidth of the as-spun sample is 2.5 kOe (appropriate for single-domain particles) while the linewidth of a melt-spun sample annealed at 900 °C for 15 min is 3.8 kOe (appropriate for larger, multidomain particles). The linewidth of the granular multilayer is attributed to a restricted distribution of shape anisotropies, as expected from a discontinuous multilayer, and is only 0.98 kOe with the magnetic field in the plane of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358141
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  • 13
    Electronic Resource
    Electronic Resource
    Reduced-temperature crystallization of thin amorphous Fe80B20 films studied via empirical modeling of extended x-ray absorption fine structure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2073-2075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the local atomic environment around Fe atoms in very thin (15 nm), amorphous, partially crystallized and fully crystallized films of Fe80B20 was studied using extended x-ray absorption fine structure (EXAFS) measurements. The relative atomic fraction of each crystalline phase present in the annealed samples was extracted from the Fe EXAFS data by a least-squares fitting procedure, using data collected from t-Fe3B, t-Fe2B, and α-Fe standards. The type and relative fraction of the crystallization products follows the trends previously measured in Fe80B20 melt-spun ribbons, except for the fact that crystallization temperatures are ≈200 K lower than those measured in bulk equivalents. This greatly reduced crystallization temperature may arise from the dominant role of surface nucleation sites in the crystallization of very thin amorphous films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116307
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  • 14
    Electronic Resource
    Electronic Resource
    Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gas (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 943-945 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sidegating in GaAs integrated circuits can be eliminated in molecular beam epitaxially grown structure with the incorporation of a GaAs buffer layer grown at low substrate temperatures (200–300 °C). We have grown two films which were identical except one had the low-temperature buffer layer included in the film structure. The films were modulation-doped heterojunctions designed to produce a high-mobility two-dimensional electron gas. The electrical characteristics of the two-dimensional electron gas were identical for the two samples. No deleterious effect on the mobility or carrier density was observed with the incorporation of the low-temperature buffer layer. At 4.2 K both films exhibited carrier densities of 4×1011 cm−2 and mobilities of (1.4–1.7)×106 cm2/V s in the dark. After a brief illumination at 4.2 K, the samples exhibited carrier densities of 5×1011 cm−2 and mobilities of (1.6–2.0)×106 cm2/V s. These electron mobilities are comparable to the highest electron mobilities ever obtained at these electron densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101358
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  • 15
    Electronic Resource
    Electronic Resource
    Effect of heat treatment on redistribution of hydrogen in directionally cast polycrystalline silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1670-1671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment on the minority-carrier surface recombination velocity in hydrogen-passivated polycrystalline silicon samples has been studied in the temperature range 350–500 °C using the electron-beam-induced current mode of a scanning electron microscope. Minority-carrier trap center densities, calculated from the minority-carrier surface recombination velocity data, varying from 8×1012 to 1.2×1012 cm−2 have been measured. A finite decrease in the minority-carrier trap center density indicates that hydrogen atoms diffuse to the surface from the bulk of the hydrogenated samples. The activation energy of hydrogen diffusion in silicon is found to be 0.53±0.04 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99053
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  • 16
    Electronic Resource
    Electronic Resource
    Low- and high-field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation-doped heterostructures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1945-1949 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown pseudomorphic InxGa1−xAs/In0.52Al0.48As modulation-doped heterostructures by molecular-beam epitaxy under carefully controlled growth conditions. Mobilities as high as 13 900, 74 000, and 134 000 cm2/V s are measured at 300, 77, and 4.2 K in a heterostructure with x=0.65. Shubnikov–de Haas measurements indicate that the change in the effective mass with increasing In is not significant and is not responsible for the enhancement in mobilities. We believe that the improvement results from reduced alloy scattering, reduced intersubband scattering, and reduced impurity scattering, all of which result from a higher conduction-band offset and increased carrier confinement in the two-dimensional electron gas. The high-field electron velocities have been measured in these samples using pulsed current-voltage and pulsed Hall measurements. A monotonic increase in velocities is observed both at 300 and 77 K with an increase of In content in the channel. Velocities of 1.55×107 and 1.87×107 cm/s are measured at 300 and 77 K, respectively, in a In0.65Ga0.35As/In0.52Al0.48As modulation-doped heterostructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341748
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  • 17
    Electronic Resource
    Electronic Resource
    High-field torque magnetometry measurements on Y1.8Er0.2Fe14B (abstract) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3778-3778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1.8Er0.2Fe14B is an interesting system in that the tendency of the Er ions to order in the basal plane is almost exactly canceled at low temperatures by the uniaxial anisotropy of the iron sublattice.1 We have performed torque magnetometry measurements in all three principal planes of a single crystal of this material at temperatures from 4 to 300 K in magnetic fields up to 60 kG, which is adequate to produce near saturation even in directions away from the principal axes, thus allowing us to determine the magnetocrystalline anisotropy free energy as a function of orientation and temperature. The free energy data were compared with calculations using the full set of crystal field parameters allowed by symmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338640
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  • 18
    Electronic Resource
    Electronic Resource
    Phase-separated Fe and Co particles in a BN matrix (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3320-3322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using co-sputtering, 10–300 A(ring) particles of Fe and Co have been prepared in an insulating BN matrix. The Fe particles have the α-Fe structure. The saturation magnetic moment of the iron particles per at. % Fe was found to be approximately independent of the Fe concentration and equal to the value of α-Fe. The system undergoes a metal–nonmetal transition at approximately 40 vol % Fe. For concentrations of Fe particles above this threshold the temperature dependence of the resistivity is metallic and the room-temperature coercivity is large (50–100 Oe). For the Co particles, the room-temperature coercivity is about twice as large as Fe above the metal–nonmetal threshold. Below the metal–nonmetal threshold the particles behave as superparamagnets and the coercivity is approximately zero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338977
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  • 19
    Electronic Resource
    Electronic Resource
    Determination of minority-carrier diffusion length in a p-silicon wafer by photocurrent generation method (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3550-3552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondestructive method to determine the diffusion length of minority carriers in a p-silicon wafer is outlined. This novel method is based on creating an accumulation layer on one side and an inversion layer on the other side of the wafer by depositing thin semitransparent layers of high (e.g., palladium) and low (e.g., aluminum) workfunction metals, respectively. The wafer acquires a structure akin to p+-p-n+ and is capable of generating a photocurrent when illuminated. The photocurrent Isc (where sc represents short circuit) as a function of the intensity Pin of a monochromatic radiation incident on the accumulation layer (p+) side of the wafer is measured. The diffusion length L is determined from the slope of the Jsc vs Pin curve. The values of L so determined were compared with that determined from the measurement of spectral response by illuminating the wafer from the inversion layer (n+) side and were found to be in excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337610
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  • 20
    Electronic Resource
    Electronic Resource
    The effect of heat treatment on redistribution of fast diffusing impurities in polycrystalline silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 942-944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment on minority carrier surface recombination velocity in polycrystalline silicon samples has been examined in the temperature range (600–900 °C) using the electron-beam induced-current mode of a scanning electron microscope. Minority carrier trap center density, calculated from minority carrier surface recombination velocity data, varying from 8.9×1011 to 6.37×1013 cm−2 have been measured. A finite variation in the minority carrier trap center density indicates that metallic impurities diffuse to the surface from the bulk of the sample. The activation energy of impurity atom diffusion is found to be 1.1±0.1 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341900
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