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  • Articles: DFG German National Licenses  (50)
  • 1995-1999  (22)
  • 1985-1989  (28)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 953-956 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low pressure metalo-organic chemical vapor deposition (LPMOCVD) technique to form Co2+ and Ce4+ doped yttrium iron garnet (Y3−xCexFe5−xCoxO12: Co,Ce:YIG) films is described. A large concentration of Co2+ doping with x=0.3–0.7 results in uniaxial anisotropy perpendicular to the plane of the film with high coercivity values and sufficiently high saturation magnetization values. This has been possible by an alternate doping scheme where commonly used compensator, Ge4+ at Fe3+ sites has been replaced by a new compensator Ce4+ at Y3+ sites in the Co-doped YIG films. The structural and compositional aspect of stabilized garnet phase in Co2+,Ce4+:YIG thin films and optical, thermomagnetic and magnetic hysteresis properties are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ba-hexaferrite thin films for recording media applications are often fabricated by a two-step process: sputter deposition of an amorphous precursor, followed by annealing to crystallize the BaFe12O19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional structural characterization techniques have not been able to distinguish between different as-sputtered films. Using polarization-dependent extended x-ray absorption fine structure (PD-EXAFS), we have observed anisotropic local structure around both Ba and Fe atoms in the amorphous precursor films. Comparison of the results suggests that the amorphous films consist of networks of Fe atoms surrounded by their O nearest neighbors, with Ba atoms fitting into in-between spaces as network modifiers (there might also be some minor Fe network modifying contribution). The local structural anisotropy of the amorphous films appears to determine the orientation of the fast-growing basal plane directions during annealing, and thus the directions of the c axes and the magnetic anisotropy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2556-2562 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ab initio effective valence shell Hamiltonian (Hυ) method is used to compute the excitation energies and oscillator strengths for resonance transitions in Mg-like ions, as well as their lowest ionization potentials. The computed excitation energies and oscillator strengths from the Hυ method are in excellent agreement with experiment and with the best values from other high level correlated computations, where available. Several previous discrepancies between theory and experiment are now removed. The present work also investigates the dependence of the calculated Hυ oscillator strengths on the nature and choice of the valence orbitals and provides a comprehensive study of the convergence of Hυ calculations with respect to the enlargement of the valence space. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 942-944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatment on minority carrier surface recombination velocity in polycrystalline silicon samples has been examined in the temperature range (600–900 °C) using the electron-beam induced-current mode of a scanning electron microscope. Minority carrier trap center density, calculated from minority carrier surface recombination velocity data, varying from 8.9×1011 to 6.37×1013 cm−2 have been measured. A finite variation in the minority carrier trap center density indicates that metallic impurities diffuse to the surface from the bulk of the sample. The activation energy of impurity atom diffusion is found to be 1.1±0.1 eV.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3778-3778 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y1.8Er0.2Fe14B is an interesting system in that the tendency of the Er ions to order in the basal plane is almost exactly canceled at low temperatures by the uniaxial anisotropy of the iron sublattice.1 We have performed torque magnetometry measurements in all three principal planes of a single crystal of this material at temperatures from 4 to 300 K in magnetic fields up to 60 kG, which is adequate to produce near saturation even in directions away from the principal axes, thus allowing us to determine the magnetocrystalline anisotropy free energy as a function of orientation and temperature. The free energy data were compared with calculations using the full set of crystal field parameters allowed by symmetry.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3550-3552 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondestructive method to determine the diffusion length of minority carriers in a p-silicon wafer is outlined. This novel method is based on creating an accumulation layer on one side and an inversion layer on the other side of the wafer by depositing thin semitransparent layers of high (e.g., palladium) and low (e.g., aluminum) workfunction metals, respectively. The wafer acquires a structure akin to p+-p-n+ and is capable of generating a photocurrent when illuminated. The photocurrent Isc (where sc represents short circuit) as a function of the intensity Pin of a monochromatic radiation incident on the accumulation layer (p+) side of the wafer is measured. The diffusion length L is determined from the slope of the Jsc vs Pin curve. The values of L so determined were compared with that determined from the measurement of spectral response by illuminating the wafer from the inversion layer (n+) side and were found to be in excellent agreement.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3320-3322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using co-sputtering, 10–300 A(ring) particles of Fe and Co have been prepared in an insulating BN matrix. The Fe particles have the α-Fe structure. The saturation magnetic moment of the iron particles per at. % Fe was found to be approximately independent of the Fe concentration and equal to the value of α-Fe. The system undergoes a metal–nonmetal transition at approximately 40 vol % Fe. For concentrations of Fe particles above this threshold the temperature dependence of the resistivity is metallic and the room-temperature coercivity is large (50–100 Oe). For the Co particles, the room-temperature coercivity is about twice as large as Fe above the metal–nonmetal threshold. Below the metal–nonmetal threshold the particles behave as superparamagnets and the coercivity is approximately zero.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3568-3570 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe57 Mössbauer spectra were taken from 300 K down to 4.2 K for two single-crystal samples of Y1.8Er0.2Fe14B, one cut with its [001] axis normal to the surface, the other with its diagonal of [100], [010], and [001] axes normal to the surface. The former sample has shown that the angle between the Fe spin and the [001] increases continuously below ∼90 K. This qualitatively agrees with the spin reorientation (i.e., the easy axis of magnetization rotates away from the [001] toward [100] on cooling below ∼90 K) which have already been observed by torque magnetometry. The latter sample has shown that the Fe spin actually rotates continuously; abrupt change of Fe spin direction, which have been already suggested to occur in Er2Fe14B, does not occur in Y1.8Er0.2Fe14B. The samples were so thick that the intensity of strong absorption lines were saturated. We have derived a formula with which the saturation effect can be corrected in order to determine the angle of the Fe spin direction correctly.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Sm-poor mixture of Fe-substituted Sm2Co17, having the nominal stoichiometry of Sm0.080Co0.645Fe0.276, was ball-milled to explore the possibility of enhancing its remanence through direct microstructural refinement. With milling, the Sm2(Co0.7Fe0.3)17 compound disassociates to a body-centered-cubic supersaturated SmCoFe solid solution and a residual SmCoFe amorphous phase. Correspondingly, the coercive field values first increase, peaking at 0.83 kOe after 180 min of milling, then decrease with continued milling to 〈0.1 kOe after 1200 min. The remanence, as Mr/Ms, is measured to track closely the coercive field behavior, experiencing modest increases to 0.26 after just 120 min of milling. Magnetization values are found to increase first with the dissociation of the 2:17 phase, and again with the ejection of Sm from the bcc component. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 28 (1989), S. 421-426 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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