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  • 1
    Electronic Resource
    Electronic Resource
    Formulation and solution of hyperbolic Stefan problem (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1190-1197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface condition for hyperbolic phase change problems, which includes sensible heat at the interface, is derived as an extension of the interface condition for standard parabolic phase change problems. The enthalpy formulation of the hyperbolic Stefan problem is presented and is used to numerically solve for the temperature distributions and the interface position. MacCormack's predictor–corrector method is applied to solve the hyperbolic phase change problem and is validated by comparing the limiting case where the thermal relaxation parameter approaches zero to the parabolic phase change problem, in which the relaxation parameter is zero. Solutions with an applied surface temperature greater than the melt temperature are presented for two different Stefan numbers. It is noted that a discontinuity occurs at the phase change interface as well as at the thermal front.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349572
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  • 2
    Electronic Resource
    Electronic Resource
    Hyperbolic heat conduction due to axisymmetric continuous or pulsed surface heat sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5478-5485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation of metals with laser pulses in the nanosecond to picosecond range may give rise to temperature fields which are significantly different from those predicted by the classical Fourier heat conduction model. In this work we examine the very short-time temperature response of a semi-infinite region to an axisymmetric laser surface source, which is either continuous or activated for a period Δt and has a spatial profile which is Gaussian, doughnut, or a combination of the Gaussian and doughnut modes. The material properties are assumed constant, and radiation and convection from the irradiated surface are neglected. The non-Fourier temperature responses are compared with their diffusive counterparts and shown to give rise to steep local temperature concentrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347006
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  • 3
    Electronic Resource
    Electronic Resource
    Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5371-5376 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented indium tin oxide (ITO) thin films were grown by pulsed-laser deposition (PLD) on glass and single-crystal yttria-stabilized zirconia (YSZ) substrates. The structural, electrical, and optical properties of these films were investigated as a function of oxygen partial pressure. Films were deposited at substrate temperature of 300 °C in mixed gases (12 mTorr of argon and 1–50 mTorr of oxygen) using a KrF excimer laser (248 nm and 30 ns full width at half maximum) at a fluence of 1.2 J/cm2. ITO films (300 nm thick), deposited by PLD on YSZ at 300 °C in a gas mixture of 12 mTorr of argon and 6 mTorr of oxygen, exhibit a low electrical resistivity (1.6×10−4 Ω cm) with a high transparency (∼74%) at 550 nm. ITO films deposited on both glass and YSZ substrates have been used as an anode contact in organic light-emitting diodes. A comparison of the device performance for the two substrates shows that the device fabricated on the ITO/YSZ has a higher external quantum efficiency than that of the device fabricated on the ITO glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461068
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  • 4
    Electronic Resource
    Electronic Resource
    Microwave dielectric properties of strained (Ba0.4Sr0.6)TiO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5448-5451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Ba0.4Sr0.6TiO3 (BST) thin films grown on (001) MgO by pulsed laser deposition show a strong correlation between their structure and their microwave dielectric properties. Epitaxially grown BST films are observed by x-ray diffraction to be tetragonally distorted. The oxygen deposition pressure affects the magnitude of the tetragonal distortion (the ratio of in-plane and surface normal lattice parameters, D=a/c) of the deposited BST films. D varied from 0.996 to 1.004 at oxygen deposition pressure of 10–800 mTorr. The dielectric properties of BST films measured at microwave frequencies (1–20 GHz) exhibit an oxygen deposition pressure dependent dielectric constant (ε=100–600), and quality factor Q (1/tan δ=10–60). The BST film grown at the oxygen deposition pressure of 200 mTorr exhibits the highest figure of merit [% tuning in ε×Q0V, where % tuning is 100×(ε0−εb)/ε0, and ε0 and εb are dielectric constant at 0 and 80 kV/cm]. This corresponds to the film with the lowest distortion (D=1.001). The observed microwave properties of the films are explained by a phenomenological thermodynamic theory based on the strain along in-plane direction of the films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314619
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  • 5
    Electronic Resource
    Electronic Resource
    Measurements of the electron temperature by the Thomson scattering system on the Hanbit magnetic mirror device : Papers from the thirteenth topical conference on high temperature plasma diagnostics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1118-1121 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Thomson scattering system on the Hanbit magnetic mirror device has been installed to measure the electron temperature and density of the plasma in the central cell. The configuration is based on a standard 90° scattering scheme. The optical system consists of a Q-switched Nd:YAG laser, input optics, collection optics, spectrograph optics, detectors, and a data acquisition system. Although the laser beam path is about 50 m long and the background emissions are not low, the electron temperature measurements have been made at a single point on a shot-by-shot basis, in which the stray light was considerably suppressed by using a beam dump, a viewing dump, and baffles. The measured electron temperature is about 50–70 eV in experiments for plasma production and heating by ICRF of 200-kW-rf power using a slot antenna. A description of the installed system and the experimental results are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321749
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  • 6
    Electronic Resource
    Electronic Resource
    Calcified nodule on the heel of a child following a single heel stick in the neonatal period (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Dystrophic cutaneous calcification may arise at sites of local trauma or in association with various disorders. Calcified nodules of the heel have been reported in high-risk neonates following repeated heel sticks to draw blood. We present a healthy 2-year-old boy with a calcified nodule on the heel secondary to a single heel stick in the neonatal period. The patient was born full-term at 38 weeks' gestation, with a birth weight appropriate for gestational age. A firm nodule was noticed at the age of 8 months; this became tender. Histology revealed epidermal and subepidermal deposition of calcium. Serum calcium and phosphate levels were normal. Although calcified heel nodules occur mostly in high-risk neonates, this case suggests that this condition also can occur in healthy children after only a single heel stick. Dermatologists should include this entity in the differential diagnosis of warty papules on the heels of children.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01362.x
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  • 7
    Electronic Resource
    Electronic Resource
    Multiple skin-coloured papules in a child (2005)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 30 (2005), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.2005.01942.x
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  • 8
    Electronic Resource
    Electronic Resource
    Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 594-596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and reflection spectra of GaN have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exciton excited states associated with the two top valence bands were also observed. The exciton binding energies, the band-gap energies, and the exciton Bohr radii are all reported along with the dielectric constant and the spin-orbit and crystal-field parameters for GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362724
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  • 9
    Electronic Resource
    Electronic Resource
    Schottky barriers on anodic-sulfide-passivated GaAs and their stability (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3920-3924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of anodic (NH4)2S passivation of n-GaAs Schottky diodes have been investigated. When these Schottky diodes are prepared on anodically treated n-GaAs in (NH4)2S solution, the Schottky barrier height is lowered by at least 200 meV, and the interface trap density is estimated to be 5.5×1012 cm−2 which is two orders less than that of the untreated sample. It is observed that the Schottky barrier height or the position of the Fermi level at the surface is not stable for samples treated with a small current density (∼83 μA/cm2), but is significantly stable for samples treated with a large current density (∼1 mA/cm2). The stability of passivation is sensitive to the photon energy of the excitation source. Although for a longer-wavelength (λ=514 nm) illumination the passivation is stable, for a shorter-wavelength (λ=325 nm) illumination, the passivation is unstable. The photoluminescence intensity is found to rapidly decay due to photon-assisted oxidation. As compared to the (NH4)2S dip treatment, the anodic (NH4)2S treatment improves the stability of passivation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359910
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical conduction in platinum–gallium nitride Schottky diodes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4467-4478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Among the devices considered for high power generation is the ubiquitous field-effect transistors which require Schottky barriers for modulating the channel mobile charge. It is in this context that we have undertaken an investigation of likely metal-GaN contacts. Here we report on the electrical conduction and other properties of Pt–GaN Schottky diodes. These Schottky diodes were fabricated using n-GaN grown by the molecular beam epitaxy method. Both capacitance–voltage and current–voltage measurements have been carried out as a function of temperature to gain insight into the processes involved in current conduction. Based on these measurements, physical mechanisms responsible for electrical conduction at low and high voltages and temperatures have been suggested. Schottky barrier height determined from the current–voltage and capacitance–voltage measurements is close to 1.10 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363408
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