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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2870-2872 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cleaning of the GaAs (111)B surface with a hydrogen electron cyclotron resonance discharge plasma is investigated at temperatures between 200 and 500 °C and compared with the GaAs (100) surface. It is found that during the exposure the GaAs (111)B is etched in a non-Arrhenius way with a higher etch rate at low temperatures. For temperatures 300–500 °C, the surface is severely roughened after exposure, while the (100) surface remains smooth in all cases. The near-surface crystalline quality of GaAs (111)B remains higher than that of (100).
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2661-2663 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ reflection spectroscopy is demonstrated to be a useful technique for monitoring the damage to the surface of GaAs substrates induced by ions from an electron cyclotron plasma. Distinct differences in the reflectance spectra of GaAs substrates are observed between etching by argon ions and chemical cleaning by hydrogen ions. For argon it is found that the damage layer thickness increases linearly with the argon ion energy. Hydrogen ions induce a damage layer of 3.1 nm and arsenic atoms are preferentially removed from the surface as the ion energy increased.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3117-3119 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition changes during GaAs oxide removal and the subsequent cleaning with a hydrogen electron cyclotron resonance plasma have been investigated with real-time optical reflection spectroscopy. It is found that the oxide is not completely removed at low temperatures, resulting in a thick damaged surface region. At moderate temperatures (300–500 °C) the plasma exposure is characterized by a two-step process: a removal of the native oxide in a few seconds followed by a gentle etch of the GaAs. In the latter step the plasma exposure leads to a surface region with little damage to the crystal. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3886-3888 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several monolayers (ML) of CdSe were deposited on (001) GaAs surfaces to study the stability of the CdSe films. The CdSe film with the 2 ML thickness showed atomically flat surfaces just after the growth. However, in three days after the growth, self-organization into dots at room temperature was clearly observed. This unexpected self-organization of dots observed at room temperature from the once coherently-grown CdSe film will be closely correlated to the enhancement of the heterointerface diffusion observed in this combination of CdSe and GaAs. This correlation between the stability of the dots and the heterointerface diffusion was examined in the common cation case of ZnSe/ZnS, which is known to show low interface diffusion. Self-organization of ZnSe dots was observed with an atomic force microscope on (001) ZnS surfaces. The ZnSe dots were stable as expected and did not show instability such as observed for the CdSe dots on GaAs or on ZnSe. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3126-3128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaN/GaN heterostructure devices have recently been attracting much attention because of their potential for high-performance microwave applications. Therefore, the electronic properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures have recently been discussed. We studied the magnetoresistance oscillation of the 2DEG at 0.4 K for various backgate voltages, and observed multiple oscillations resulting from spin splitting. The magnetoresistance shows clear beating due to the superposition of three oscillations. The frequency interval between the first and second largest frequencies is proportional to the total electron concentration and the measured spin-orbit interaction parameter agrees with the theoretical one. Therefore, the first and second largest frequencies are found to correspond to spin splitting by the spin-orbit interaction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2515-2517 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy crystals were grown by ultra-high-vacuum chemical-vapor deposition and their thermal-annealing behaviors were studied by infrared (IR) absorption measurements. The present samples exhibited absorption peaks originating from local vibrational modes of substitutional C atoms with two different atomic configurations; one is a C atom with four Si neighbors (Si4 configuration) and the other is with one Ge and three Si neighbors (Si3Ge1 configuration). As the annealing temperature was increased from 700 to 950 °C, the absorption peak of the C atoms with Si3Ge1 configuration increased in intensity. This clearly demonstrated that thermal annealing leads to the formation of Ge–C bonds. Moreover, the composition dependence of the IR spectra suggested that Ge–C bonds are formed to reduce the strain energy of the Si1−x−yGexCy crystals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3962-3964 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si1−x−yGexCy crystals were grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) using Si2H6, GeH4, and SiH3CH3 as source gases. Although the total C content in the grown crystals increased with increasing the partial pressure of SiH3CH3 gas, the substitutional C content saturated at a certain value. The maximum substitutional C content was found to change depending on the Ge content. As the Ge content was increased from 13 to 35 at. %, the maximum substitutional C content linearly decreased from 2.0 to 0.8 at. %. These results clearly demonstrate that the existence of Ge atoms prevents the substitutional incorporation of C atoms in Si1−x−yGexCy growth by CVD. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    ISSN: 1365-2036
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aim : To investigate the inhibitory effects on gastric acid secretion of three proton pump inhibitors, omeprazole, lansoprazole and rabeprazole, using a three-way crossover design in healthy Helicobacter pylori-negative,S-mephenytoin 4′-hydroxylase (CYP2C19) homo- and hetero-extensive metabolizers.Methods : Eight healthy Japanese male volunteers were enrolled. After the administration of rabeprazole (10 mg/day), lansoprazole (30 mg/day) or omeprazole (20 mg/day), intragastric pH monitoring was commenced from 24 h before the first proton pump inhibitor dose, and continued for days 1–3 after proton pump inhibitor administration. The pH electrode was used for 48 h and changed just before pH monitoring on day 2.Results : For the administration of 10 mg/day rabeprazole, the mean ratios of the 24-h pH ≥ 3 holding timewere 5.7 ± 1.1%,13.6 ± 2.2%, 35.3 ± 2.7% and 62.8 ± 3.1% for the pre-treatment day and days 1, 2 and 3, respectively. The same ratios for lansoprazole (30 mg/day) were 5.7 ± 0.7%, 7.4 ± 1.5%, 13.6 ± 3.4% and 26.6 ± 4.9%; the same ratios for 20 mg/day omeprazole were 5.9 ± 0.9%, 6.1 ± 1.2%, 11.4 ± 2.8% and 16.4 ± 4.6%. The mean ratio of the 24-h pH ≥ 3 holding time of days 1–3 increased significantly compared to the pre-treatment day (P 〈 0.01) with the administration of rabeprazole and lansoprazole. The magnitude of inhibition of gastric acid secretion after rabeprazole administration was stronger than that after lansoprazole. A significant elevation of the mean ratio of the 24-h pH ≥ 3 holding time was demonstrated on days 2 and 3 with omeprazole (P 〈 0.01).Conclusions : In H. pylori-negative CYP2C19 extensive metabolizers, rabeprazole (10 mg/day) shows a faster onset of rising intragastric pH and a stronger inhibition of gastric acid secretion than do lansoprazole (30 mg/day) or omeprazole (20 mg/day).
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Biomembranes 1067 (1991), S. 71-80 
    ISSN: 0005-2736
    Keywords: Confocal microscopy ; Exocytosis ; Fluorescence ; Hormone release ; Imaging ; Mast cell
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 280 (1990), S. 313-319 
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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