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  • 1995-1999  (8)
  • 1990-1994
  • 1998  (5)
  • 1996  (3)
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  • 1995-1999  (8)
  • 1990-1994
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  • 1
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 400-402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: n-type doping of AlxGa1−xSb epilayers (0≤x≤1) grown by organometallic vapor phase epitaxy has been achieved by using tritertiarybutylaluminum, triethylgallium, and trimethylantimony as the organometallic precursors and diethyltellurium as the doping source. Electron concentrations exceed 1017 cm−3 for layers with x〈0.3, and decrease to ∼1016 cm−3 for x=1 as a result of higher residual acceptor concentration. Lattice-mismatched double-heterostructure diode lasers with AlGaSb cladding layers and GaSb active layer are demonstrated, and indicate the potential of OMVPE for growth of GaSb-based materials for electronic and optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2936-2938 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple quantum-well diode lasers incorporating compressively strained InAs0.935Sb0.065 wells and tensile-strained In0.15Al0.85As0.9Sb0.1 barriers are reported. These lasers, grown on InAs substrates by molecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 μm. Broad-stripe lasers have exhibited pulsed threshold current density as low as 30 A/cm2 at 80 K and the characteristic temperatures between 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, and the maximum cw operating temperature is 175 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 876-878 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb diode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm2, one of the lowest values reported for diode lasers at room temperature. These lasers, grown by molecular beam epitaxy, have emission wavelengths of ∼2.05 μm, characteristic temperature of 65 K, internal quantum efficiency of 95%, and internal loss coefficient of 7 cm−1. Single-ended cw power of 1 W is obtained for a 100-μm aperture. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Experiments in fluids 25 (1998), S. 305-315 
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  Hot-wire measurement and multi-smoke wire flow visualization method are employed to study vortex pairing in the jet column mode under two-frequency forcing with controlled initial phase differences. For the range of 0.3〈St D 〈0.6, vortex pairing can be easily controlled by means of the fundamental and its subharmonic forcing with varying initial phase differences. As stable vortex pairing dominates, the variation of the subharmonic component with the initial phase difference changes from a sine shape to a cusp-like shape. The harmonics of the subharmonic also show similar trends. The detuning induces the amplitude and phase modulations of the u-signal in the time trace and the sideband growth in the spectra. The u-signal reflects the subharmonic variation with the initial phase difference in its envelope. For 0.6〈St D 〈0.9, non-pairing advection of vortices due to improper phase difference is sometimes observed under single-frequency forcing. In this case, vortex pairing can be made to occur by the addition of a subharmonic with very small amplitude. As the initial level of this subharmonic is increased, the onset position of vortex pairing moves upstream. In this range, the initial phase difference is not an effective parameter in controlling vortex pairing.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract NiCrAlY bond coat and ZrO2–8 wt% Y2O3 top coat with various thicknesses were deposited on Hastelloy X by plasma spraying. Residual stress was calculated by the finite element method (FEM) to explain the variations in the bond strength and thermal fatigue characteristics with the thickness of the bond coat and top coat. The bond strength of thermal barrier coatings (TBCs) increased with decreasing maximum residual stress in the y-direction of the top coat. The thermal fatigue characteristics increased with decrease of the maximum principal residual stress of the top coat and the thickness of oxidation layer of the bond coat.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 0178-515X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract A recombinant strain of Saccharomyces cerevisiae, GAL-GO2, was developed to facilitate the production of extracellular glucose oxidase (GOD). The recombinant strain secreted 85% (8.7 U/ml) of the total GOD (10.3 U/ml) produced in shake flask culture. For further enhancement of GOD production, optimization of the speed of agitation and the rate of aeration in a stirred tank fermentor was carried out. Response surface methodology with appropriate statistical experimental design was employed for this purpose. The maximal level of extracellular GOD was achieved when the speed of agitation and the rate of aeration were 420 rpm and 0.25 vvm, respectively. The enzyme production was increased by 74% compared to the level obtained under unoptimized conditions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Macromolecular Rapid Communications 19 (1998), S. 419-422 
    ISSN: 1022-1336
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The turbulent drag reduction characteristics of the rod-like polysaccharide xanthan gum dissolved in water was investigated using a rotating disk apparatus. The ultrasonic degradation method was adopted to obtain polymer fractions of different molecular weights of xanthan gum for this study. The drag reduction curve was then plotted to observed the universal characteristics of xanthan gum, and the intrinsic concentration was found to be an extremely useful quantity in normalizing the drag reduction data for different molecular weights.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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