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  • 2000-2004  (5)
  • 2001  (5)
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  • 2000-2004  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 742-742 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A pinhole soft x-ray imaging camera is being developed for use on the Caltech solar prominence simulation experiment and also the Caltech spheromak experiment. The camera is based upon a commercial gated intensifier which produces an image on a phosphor screen. Moderate signal level, excellent time resolution, and reasonable imaging have been obtained, but there has not been any determination of the x-ray energy spectrum. An estimation of the spectrum is now underway using filtered AXUV diodes and it is expected that knowledge of the x-ray energy will enable further optimization of the camera.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4025-4027 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge/Si islands, grown using molecular-beam epitaxy on a Si/Si0.5Ge0.5 buffer structure modified with in situ ion implantation of 1 keV As+, are investigated by transmission electron microscopy (TEM), photoluminiscence (PL), and Raman spectroscopy. Vertically correlated Ge islands are observed by TEM as a result of the implantation. A 0.8 μm PL peak is detected from the layers of self-assembled Ge quantum dots. A nonhomogeneous distribution of strain around the Ge/Si islands is deduced from the Raman scattering data. This strain is assumed to be responsible for the PL emission. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3494-3496 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the bimodal distribution and long-range ordering of GeAs nanodots obtained in strain-relaxed epitaxial Si0.5Ge0.5 alloy layers after arsenic implantation and rapid thermal annealing. GeAs dots of two different average sizes around 15 and 55 nm are found after high temperature rapid thermal annealing. The larger dots are of elliptical shape and located at the surface region; they are distributed preferably along 〈110〉 directions which correlates well with the observed cross-hatch pattern. The origin of the bimodal precipitate distribution as well as of the long-range ordering effect of the GeAs nanodots is discussed in terms of strain-induced nucleation and diffusion-limited growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 4296-4311 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Dilute or semidilute solutions of nonintersecting self-avoiding walk (SAW) polymer chains are mapped onto a fluid of "soft" particles interacting via an effective pair potential between their centers of mass. This mapping is achieved by inverting the pair distribution function of the centers of mass of the original polymer chains, using integral equation techniques from the theory of simple fluids. The resulting effective pair potential is finite at all distances, has a range of the order of the radius of gyration, and turns out to be only moderately concentration-dependent. The dependence of the effective potential on polymer length is analyzed in an effort to extract the scaling limit. The effective potential is used to derive the osmotic equation of state, which is compared to simulation data for the full SAW segment model, and to the predictions of renormalization group calculations. A similar inversion procedure is used to derive an effective wall–polymer potential from the center of mass density profiles near the wall, obtained from simulations of the full polymer segment model. The resulting wall–polymer potential turns out to depend strongly on bulk polymer concentration when polymer–polymer correlations are taken into account, leading to a considerable enhancement of the effective repulsion with increasing concentration. The effective polymer–polymer and wall–polymer potentials are combined to calculate the depletion interaction induced by SAW polymers between two walls. The calculated depletion interaction agrees well with the "exact" results from much more computer-intensive direct simulation of the full polymer-segment model, and clearly illustrates the inadequacy—in the semidilute regime—of the standard Asakura–Oosawa approximation based on the assumption of noninteracting polymer coils. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 773-775 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The structure of implantation-induced damage in Ge has been investigated using high resolution extended X-ray absorption fine structure spectroscopy(EXAFS). EXAFS data analysis was performed with the Cumulant Method. For the crystalline-to-amorphous transformation, a progressive increase in bond-length was observed without the presence of an asymmetry in interatomic distance distribution (RDF). Beyond the amorphization threshold the RDF was dose dependent and asymmetric, where the bond-length and asymmetry increased as functions of ion dose. Such an effect was attributed to the formation of three- and five-fold coordinated atoms within the a morphous phase. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid ,asymmetry and width of the RDF, as consistent with a reduction in the fraction of non four-fold coordinated atoms.The results have been compared to other EXAFS studies of amorphous Ge, and it issuggested thatthe range of bond-lengths reported therein is related to the sample preparation method and state of relaxation.
    Type of Medium: Electronic Resource
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