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  • 2000-2004  (11)
  • 1910-1914  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6177-6181 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Peak current densities of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes (RITD) grown by molecular beam epitaxy have been measured as a function of the growth temperature. The growth procedures were designed to produce nominally identical AlSb tunneling barriers. The variations observed in the peak current for positive bias are consistent with the barrier on the substrate side of the RITD becoming effectively thicker for diodes grown at high temperatures. Plan-view in situ scanning tunneling microscopy (STM) measurements indicate that smoother AlSb barriers are grown at high temperature. The growth temperature dependence of the peak current density and STM results are consistent, because tunneling is highly dependent on barrier thickness. While the high and low temperature growths were designed to have the same barrier thickness, the large current flowing through the thin areas of a rough barrier result in an effectively thinner barrier compared to the smooth one. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4665-4669 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin injection at a ferromagnet–semiconductor interface has been demonstrated by convolving the spin-split density of states of carriers in a high mobility InAs quantum well with the spin polarization of conduction electrons in a thin ferromagnetic film. Transport measurements on a diode structure detected a spin-dependent interfacial resistance, with ΔRi/R¯i(approximate)1%. In a different configuration, open circuit voltage experiments measure the spin-dependent shifts in the chemical potential of the carriers in the quantum well. Results of the two techniques are compared over the temperature range 50〈T〈296 K, demonstrating both spin injection and detection at the ferromagnet–semiconductor interface.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7793-7797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent optical absorption of cerium-doped gadolinium oxyorthosilicate (Gd2SiO5:Ce) has been measured and analyzed for impurity-ion-lattice coupling parameters and oscillator strengths. Although the spectrum consists of overlapping Ce3+ bands and Gd3+ lines, two well-resolved Ce3+ bands with 10 K maxima at 3.32 eV (peak a) and 3.61 eV (peak b) are amenable to spectral analysis. These bands, previously assigned to Ce3+ ions occupying crystallographically inequivalent substitutional sites, are characterized by Gaussian line shapes and temperature-dependent half widths that are well described by the linear model of impurity-ion-lattice coupling. Huang–Rhys [Proc. R. Soc. A 204, 404 (1950)] parameters of peaks a and b are 22.7 and 5.7, respectively, indicating strong ion-lattice coupling, with vibrational frequencies 1.83×1013 s−1 (peak a) and 5.07×1013 s−1 (peak b). Peak b centroid is approximately temperature independent, but peak a centroid shifts to higher energy with increasing temperature. This dependence is adequately described by including higher-order coupling terms in the ion-lattice interaction, although crystal-field contributions cannot be excluded. Absorption band oscillator strengths, f, are calculated from Smakula's [Z. Phys. 59, 603 (1930)] formula and knowledge of cerium concentration for the two inequivalent sites. In the interval 10–300 K, peak a f values range from (9.8 to 26.8)×10−4 and peak b f values vary from (7.8 to 5.8)×10−3. From the known correlation between oscillator strength and metal-ion-ligand separation, we identify peaks a and b as the seven- and nine-oxygen-coordinated sites, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8192-8194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared photoluminescence has been used to study the band-gap energy of InAs1−xSbx digital superlattices and band alignment of InAs1−xSbx/AlSb quantum wells at 5 K. It is found that the InAs1−xSbx digital alloys have a smaller effective band gap than InAs1−xSbx random alloys. In addition, the valence band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs1−xSbx is increased, and the alignment between InAs1−xSbx/AlSb becomes type I when x〉0.15. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5791-5793 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The peak current density of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes has been enhanced by replacing the AlSb barriers with Al1−xGaxSb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-ML-thick ternary alloy barriers with x=0.35 are found to have peak current densities three times larger than those with AlSb barriers. The peak-to-valley current ratio decreases by only one third from 18 for the AlSb diodes to 12 for diodes with the ternary alloy barriers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7360-7362 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski growth of cerium-doped Lu1.8Y0.2SiO5 (LYSO) from a 90/10 solution of Lu2SiO5 (LSO) and Y2SiO5 (YSO) is demonstrated. The alloyed scintillator retains the favorable growth properties of YSO and the desirable physical and optical scintillator properties of LSO. Radioluminescence, thermally stimulated luminescence, optical absorption, and lifetime measurements confirm the equivalence of LYSO and LSO optical properties. Advantages of LYSO Czochralski growth relative to LSO include reduced melting point, less propensity for formation of crystalline inclusions, lower cost of starting material, and easier incorporation of cerium into the host lattice. This material offers an attractive alternative to LSO for scintillator applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2440-2442 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shift. These results are consistent with a previous structural assignment of the AlSb β(4×3) and α(4×3) surface reconstructions and provide guidelines for producing smooth interfaces in antimonide-based heterostructures.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2581-2583 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature current–voltage measurements have been made on InAs/AlSb/GaSb resonant interband tunnel diodes irradiated with 2 MeV protons to determine the effect of displacement damage on the negative resistance peak current Ip and the peak-to-valley current ratio P/V. Diodes with 5 and 13 ML AlSb barrier thickness were irradiated and measured several times until the total fluences reached 1×1015 and 2×1014 H+/cm2, respectively. The current due to radiation-induced defects has a nonlinear voltage dependence, with a large increase occurring in the voltage range between the negative resistance peak and the valley. Ip increased 〈50% while a large increase in the valley current decreased the P/V ratios to about 2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3989-3991 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated spin-polarized light-emitting diode structures via epitaxial regrowth of Zn1−xMnxSe on air-exposed surfaces of AlyGa1−yAs/GaAs quantum wells. No passivation procedures were used to protect or prepare the III–V surface. The electroluminescence is strongly circularly polarized due to the electrical injection of spin-polarized electrons from the ZnMnSe contact into the GaAs quantum well. An analysis of the optical polarization yields a lower bound of 65% for the spin injection efficiency. These results demonstrate the robustness of the spin injection process in the diffusive transport regime, and attest to the practicality of manufacturing semiconductor-based spin injection devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of cardiovascular electrophysiology 11 (2000), S. 0 
    ISSN: 1540-8167
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Molecular Pharmacology of LQT3. The congenital long QT syndromes (LQTSs) are a group of inherited cardiac disorders that increase the risk of sudden death from ventricular arrhythmias. Individuals with LQTS show abnormalities in cardiac repolarization. Mutations that cause LQTSs are distributed throughout the human genome on chromosomes 3,4,7,11, and 21. Recent molecular genetic studies established that LQT3 results from mutations in the cardiac sodium ion channel gene (SCN5A). Research efforts are aimed at elucidating molecular mechanisms, determining the links between clinical phenotypes and the individual gene mutations, and pharmacologic targeting of the phenotypes. This approach will ultimately guide rational therapy. In addition, LQT3 serves as a model for inherited molecular-based disorder, as well as a paradigm for understanding the genesis and control of other cardiac arrhythmias.
    Type of Medium: Electronic Resource
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