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  • 1995-1999  (3)
  • 1990-1994  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Ion channeling studies of epitaxial Fe and Co silicides on Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7256-7264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial Co and Fe silicides have been grown by molecular beam epitaxy on Si(111) and Si(001) substrates with film thicknesses ranging between 25 and 8400 A(ring). We used Rutherford backscattering spectrometry channeling techniques to measure the lattice distortion as a function of film thickness. The critical thickness hc corresponding to the film thickness at which strain relieving dislocations begin to appear was determined for CoSi2 on Si(111) and Si(001) as well as for Si on CoSi2(111). For CoSi2 on Si(001), a larger critical thickness was obtained than on Si(111), where hc is ∼45 A(ring). Epitaxial Si on CoSi2(111) was found to be under a compressive strain up to thicknesses of about 350 A(ring) depending on substrate misorientation. Strain measurements were also performed on epitaxially stabilized Co and Fe monosilicides with the CsCl structure. Channeling measurements on thick epitaxial films of bcc-Fe, Fe3Si, FeSi, and Fe0.5Si were used to determine the crystalline quality. Excellent channeling minimum yields of 4.0% were found for bcc-Fe/Si(111). The results are compared with structural information obtained from x-ray diffraction and Brillouin scattering spectroscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358007
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  • 2
    Electronic Resource
    Electronic Resource
    Tunable infrared detector with epitaxial silicide/silicon heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8798-8807 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial CoSi2/Si/CoSi2 and CoSi2/Si/poly-PtSi heterostructures were grown with molecular-beam epitaxy onto Si(111). Characterization of the heterostructures with scanning tunneling microscopy, Rutherford backscattering spectrometry, and transmission electron microscopy revealed very high structural quality. We report on the application of these heterostructures to a wavelength-tunable infrared detector. It consists of two back-to-back Schottky contacts separated by the thin (1000–2000 A(ring)) undoped Si spacer layer. The different Schottky barrier heights which photocreated charge carriers in the silicides have to surmount can be used to control the cutoff wavelength by simply varying the applied bias across the structure. Photoelectric measurements of so-called symmetrical sensors made of CoSi2/Si/CoSi2 where both silicides contribute equally to the photocurrent, yielded a bias dependence of the cutoff energy three times as large as predicted by the conventional Schottky effect. In this case, the observed tunability of the cutoff energy can be explained only by considering ballistic transport of photocreated carriers (holes and electrons) in the silicon. Different mean free path lengths of hot electrons and holes in Si lead to a strongly bias-dependent ratio of the collected photoelectrons and photoholes. Photocurrents measured in asymmetrical sensors made of CoSi2/Si/PtSi were found to change phase as a function of light energy at a constant bias. This change of photocurrent direction can also be understood with the proposed energy band diagram and ballistic transport of hot carriers in Si. This kind of device showed a tunability of the cutoff energy between 0.3 and 0.5 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362505
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetron sputter epitaxy of SimGen/Si(001) strained-layer superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2220-2222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of SimGen/Si(001) strained-layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at TS=350 °C, as is evidenced by Rutherford backscattering spectrometry minimum channeling yields χmin=3%. The absence of relaxation was demonstrated by Raman spectroscopy. Raman results on the first-order longitudinal-optical Ge–Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice, which indicates an interface broadening of the order of 2 monolayers. High resolution transmission electron microscopy confirmed the formation of smooth and well-defined interfaces between subsequent Si and Ge layers. © 1994 American Institute of Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112766
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  • 4
    Electronic Resource
    Electronic Resource
    Photochemical Reactions of Transition Metal Organyl Complexes with Olefins. 18. Dicarbonylbis(η5-cyclopentadienyl)(μ-1,4-η:4,5-η-1,4-pentadien-1,4-diyl)oxoditungsten(W—W) (1997)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 1018-1020 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270197004393
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  • 5
    Electronic Resource
    Electronic Resource
    Multifragmentation study on 30 AMeV32S+58Ni (1995)
    Springer
    The European physical journal 350 (1995), S. 327-341 
    Details
    ISSN: 1434-601X
    Keywords: 25.70.Gh ; 25.70.Jj ; 25.70.Pq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In a multidetector experiment on 26 or 30 AMeV32S+58Ni, up to four coincident heavier or intermediate-mass fragments were observed. One of these occasionally has the characteristics of a projectile-like fragment, up to three may be attributed to the decay of the heavy reaction product. Taking the velocity of the fragments as a measure of the heavy-product excitation energy, one finds evaporation, fission and multifragmentation to follow one another with rising excitation. Model simulations of sequential decay with up to two binary fissions and, alternatively, of simultaneous statistical multifragmentation were performed for comparison with experimental distributions of mass, velocity and (for events with three slow intermediate-mass fragments) relative azimuthal angle. Though in the three-fragment events indications of simultaneous multifragmentation are present, the sequential binary decay predominates. Evaporated protons and α particles detected in coincidence have a mean multiplicity growing with excitation energy, while the temperature governing the spectra has a plateau with a value of about 5.5 MeV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01291190
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  • 6
    Electronic Resource
    Electronic Resource
    An optimal algorithm for the on-line closest-pair problem (1994)
    Springer
    Algorithmica 12 (1994), S. 18-29 
    Details
    ISSN: 1432-0541
    Keywords: Computational geometry ; Closest pair ; Point location ; Centroid ; Amortization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract We give an algorithm that computes the closest pair in a set ofn points ink-dimensional space on-line, inO(n logn) time. The algorithm only uses algebraic functions and, therefore, is optimal. The algorithm maintains a hierarchical subdivision ofk-space into hyperrectangles, which is stored in a binary tree. Centroids are used to maintain a balanced decomposition of this tree.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01377181
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  • 7
    Electronic Resource
    Electronic Resource
    Methicillin-ResistantStaphylococcus aureus in Europe (1994)
    Springer
    European journal of clinical microbiology & infectious diseases 13 (1994), S. 50-55 
    Details
    ISSN: 1435-4373
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In order to obtain pan-European data on methicillin-resistantStaphylococcus aureus (MRSA), 43 laboratories from ten European countries each screened 200 consecutiveStaphylococcus aureus isolates for methicillin resistance. Only one isolate per patient was permitted. All participants used a uniform oxacillin-supplemented screening plate. MRSA isolates were sent to Munich for reconfirmation and further susceptibility testing. Phage typing of the MRSA strains was performed in Denmark. Of the 7,333Staphylococcus aureus strains screened, 936 (12.8%) were methicillin resistant. The proportion of MRSA in the various European countries ranged from 〈1% in Scandinavia to 〉 30% in Spain, France and Italy. Rates of resistance to the non-glycopeptide antibiotics were lowest for rifampin and highest for ciprofloxacin. Sixty percent of the methicillin-resistant strains originated from patients in surgical and medical departments, with wounds being the most common isolation source. MRSA was found more frequently in intensive care patients. Only 13% of the strains were non-typable, and 76% of the isolates belonged to phage group III. For each area phage typing detected one or a few dominating (epidemic) types, but 46% of the strains did not belong to these types; the MRSA population is thus a mixture of epidemic and non-epidemic strains. MRSA seems to be a growing problem, especially in southern Europe, where incidence and rates of antibiotic resistance are alarmingly high.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02026127
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  • 8
    Electronic Resource
    Electronic Resource
    Projectile break-up with two outgoing intermediate-mass fragments in 26 AMeV32S+197Au (1993)
    Springer
    The European physical journal 345 (1993), S. 29-35 
    Details
    ISSN: 1434-601X
    Keywords: 25.70.Lm ; Mn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Correlations between two intermediate-mass fragments resulting from 840 MeV32S projectiles interacting with197Au were measured. The angular correlations and absolute two-fragment cross sections agree with predictions of a semi-microscopic model for direct dynamic projectile break-up. This suggests a predominantly direct mechanism for the production of intermediate-mass fragment pairs. It is argued that the intensity of such a channel which, compared to decays yieldingα particles, is much larger than observed for the sequential decay of corresponding primary excited nuclei, supports the direct-break-up interpretation. The model mechanism yields also strongly damped projectile fragments of intermediate mass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01290336
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