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  • 1
    Electronic Resource
    Electronic Resource
    Identification of the DNA damage-responsive elements of therhp51 + gene, arecA andRAD51 homolog from the fission yeastSchizosaccharomyces pombe (1996)
    Springer
    Molecular genetics and genomics 251 (1996), S. 167-175 
    Details
    ISSN: 1617-4623
    Keywords: Schizosaccharomyces pombe ; DNA-damage inducibility ; Damage-responsive element ; Upstream activating sequence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract TheSchizosaccharomyces pombe rhp51 + gene encodes a recombinational repair protein that shares significant sequence identities with the bacterial RecA and theSaccharomyces cerevisiae RAD51 protein. Levels ofrhp51 + mRNA increase following several types of DNA damage or inhibition of DNA synthesis. Anrhp51::ura4 fusion gene was used to identify the cis-acting promoter elements involved in regulatingrhp51 + expression in response to DNA damage. Two elements, designated DRE1 and DRE2 (fordamage-responsiveelement), match a decamer consensus URS (upstream repressing sequence) found in the promoters of many other DNA repair and metabolism genes fromS. cerevisiae. However, our results show that DRE1 and DRE2 each function as a UAS (upstream activating sequence) rather than a URS and are also required for DNA-damage inducibility of the gene. A 20-bp fragment located downstream of both DRE1 and DRE2 is responsible for URS function. The DRE1 and DRE2 elements cross-competed for binding to two proteins of 45 and 59 kDa. DNase I footprint analysis suggests that DRE1 and DRE2 bind to the same DNA-binding proteins. These results suggest that the DRE-binding proteins may play an important role in the DNA-damage inducibility ofrhp51 + expression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02172915
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of magnetic properties in CoCrPt longitudinal recording media by Cr75Ti25/CoTi bilayer (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4298-4300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of the Cr75Ti25/CoTi bilayer on the magnetic and crystallographic properties in CoCrPt longitudinal recording media were investigated. CoCrPt(30 nm)/Cr75Ti25(X nm)/CoTi(50 nm) films were deposited on glass substrates heated at 250 °C by a dc magnetron sputtering method. Coercivity increased from 2200 to 3200 Oe by incorporating a 50 nm thick Cr75Ti25 intermediate layer between the CoCrPt magnetic layer and the CoTi underlayer. From x-ray analyses, the rather strong Co(101¯0) diffraction was developed in addition to Co(112¯0) diffraction in CoCrPt/Cr75Ti25/CoTi films, while only Co(112¯0) diffraction was observed in CoCrPt/CoTi films. Transmission electron microscopy image confirmed that the small grain size of 18 nm in both types of films. This enhancement of the coercivity can be attributed to the increase of magnetic decoupling effect through the Cr segregation at the grain boundaries of the magnetic layer. In addition, the presence of the Co(101¯0) plane, and small grain size due to the B2 structure intermetallic compound underlayer should influence the magnetic properties of CoCrPt/Cr75Ti25/CoTi films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370348
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5404-5411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe3−xSi1+x films have been grown on Si(111) by codeposition at room temperature. Their structural and electronic properties have been investigated by means of low-energy electron diffraction (LEED), x-ray photoelectron diffraction (XPD), and x-ray photoemission spectroscopy (XPS). These films, with compositions ranging from Fe3Si to FeSi, exhibit a (1×1) LEED pattern. Both XPD and core level binding energy measurements indicate that single Fe3−xSi1+x phases (with 0〈x〈1), without bulk counterpart, can be stabilized by epitaxy on Si(111). The XPD experiment clearly shows that these Fe3−xSi1+x (0≤x≤1) films adopt the same cubic structure. Furthermore, the Si 2p, Fe 2p3/2, and Fe 3s core levels are slightly shifted to higher binding energies resulting from chemical effects and differences in local coordination when going from Fe3Si (DO3) to FeSi (CsCl). Multiplet splittings ΔE3s are observed in Fe 3s core-level XPS spectra for all Fe3−xSi1+x compounds except the FeSi (CsCl) one. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359721
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  • 4
    Electronic Resource
    Electronic Resource
    Thick AlxGa1−xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2513-2515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117724
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of ion gettering effects in high-temperature superconducting oxide material (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1629-1630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion gettering effect has been observed in high-temperature superconducting YBa2Cu3O7 material. Silicon ions were implanted into the material and subsequent high-temperature annealing produced ion movement from a low concentration region to a higher concentration region where the damage of the crystal structure is severe. This gettering effect could be used to make a superconductor-nonsuperconductor-superconductor trilayer structure within a single YBCO film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117053
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  • 6
    Electronic Resource
    Electronic Resource
    Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2258-2260 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of a GaAs layer structure consisting of a thin (10 nm) layer of low-temperature-grown GaAs on a heavily n-doped GaAs layer, both grown by molecular beam epitaxy, has been studied using a scanning tunneling microscope. The sample was exposed to the atmosphere between the layer growth and STM characterization. Tunneling spectroscopy shows both the GaAs band edges and a band of midgap states associated with the excess As in the surface layer. The observation of midgap states following atmospheric exposure indicates that the low-temperature-grown GaAs layer does not oxidize rapidly. The spectroscopy results are used to confirm a model for conduction in low resistance, nonalloyed contacts employing comparable layer structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115877
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  • 7
    Electronic Resource
    Electronic Resource
    Inhibition of superconductivity in YBaCuO films by aluminum ion implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2717-2719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the inhibition of superconductivity in high-temperature superconductors oxide films by aluminum ion implantation. Aluminum ions, with doses ranging from 1×1015–1×1016/cm2, were implanted into epitaxial YBa2Cu3O7−x (YBCO) films with an injection energy of 100 keV. Doses of 1×1016/cm2 completely suppressed the diamagnetism of the YBCO film without the need for annealing. Lower doses of 1×1015/cm2 inhibited the superconductivity after low-temperature annealing. The results of the aluminum implantation are compared with previous silicon and boron implantations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114303
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  • 8
    Electronic Resource
    Electronic Resource
    Improvement in gate oxide integrity on thin-film silicon-on-insulator substrates by lateral gettering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3397-3399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a significant improvement in gate oxide integrity is achieved, with increased oxide breakdown voltages and charge-to-breakdowns, as well as a reduction in localized oxide charge trapping. The same gettering effect on separation-by-implantation-of-oxygen and bonded silicon-on-insulator substrates suggests that the lack of effective gettering is mainly responsible for the oxide degradation regardless of the TFSOI type. This work also demonstrates the feasibility of achieving bulk-comparable gate oxides on TFSOI substrates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120347
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  • 9
    Electronic Resource
    Electronic Resource
    Inactivation Kinetics of Lactobacillus plantarum by High Pressure Carbon Dioxide (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 64 (1999), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Inactivation kinetics of Lactobacillus plantarum by high pressure CO2 was investigated to understand the mechanism of microbial inactivation. The inactivation rates increased with pressure, temperature and exposure time, and with decreasing pH of media. Microbial inactivation was governed essentially by penetration of CO2 into cells and its effectiveness could be improved by the enhanced transfer rate. Microbial reduction of 8 log cycles was observed within 120 min under CO2 pressure of 70 kg/cm2 at 30°C. We hypothesized that the cell death resulted from the lowered intracellular pH and damage to the cell membrane due to penetration of CO2. Pressurized CO2 treatment is a potential nonthermal technology for food preservation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1999.tb15120.x
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  • 10
    Electronic Resource
    Electronic Resource
    Angiocentric lymphoma masquerading as acute appendicitis (1999)
    Oxford, U.K. and Cambridge, USA : Blackwell Science Ltd
    Histopathology 34 (1999), S. 0 
    Details
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2559.1999.0669f.x
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