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  • 1985-1989  (10)
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  • 1
    Electronic Resource
    Electronic Resource
    Zinc delta doping of GaAs by organometallic vapor phase epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc delta-doped layers have been grown by atmospheric pressure organometallic vapor phase epitaxy. Secondary-ion mass spectroscopy and electrochemical capacitance-voltage profiling were used to measure the spatial distribution of the Zn for both as-grown and annealed samples. The narrowest atomic profiles had full width at half maxima of 70 A(ring) for peak Zn concentrations of ≤3×1018 cm−3. The as-grown width of these profiles is attributed to a combination of dopant memory effect and growth-related diffusion during the actual formation of the delta-doped layer. An effective diffusion coefficient D of ≤7×10−17 cm2/s is estimated for a growth temperature of 625 °C. Rapid thermal annealing at 900 °C for 5 s of several samples grown under various conditions led to calculated values of D in the range 0.5–1.0×10−12 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102240
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Carbon implantation in InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon implanted into InP at doses between 5×1012 and 5×1014 cm−2, either by itself or with B, Ga, Al, or P coimplantation at room temperature or 200 °C, displays donor activity for all annealing temperatures (600–900 °C; 10 s). Phosphorus coimplantation enhances the donor activation percentage over carbon-only implantation, while coimplants of B, Ga, and Al reduce the donor activity. Peak carrier concentrations of 3×1019 cm−3 were obtained for C+P implantation at a dose of 5×1014 cm−2, followed by annealing at 700 °C for 10 s. Annealing at 〉700 °C leads to a reduction in net donor density through carbon site switching to produce self-compensation. The C diffusivity is estimated to be less than 2.5×10−14 cm−2 s−1 at 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102276
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Role of vanadium in organometallic vapor phase epitaxy grown GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1772-1774 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and photoluminescent properties of vanadium incorporated into GaAs epitaxial layers from a VO(OC2H5)3 source during organometallic vapor phase epitaxy were examined. The vanadium concentration in the GaAs was controllably varied from 1016 to 1018 atoms cm−3. Deep level transient spectroscopy showed the presence of an electron trap at Ec−0.15 eV which increased in concentration with vanadium content of the epitaxial layers. A maximum value of 8×1015 cm−3 for this trap was obtained. There were no midgap electron traps associated with vanadium. In intentionally Si-doped epitaxial layers, co-doping with vanadium was observed to have no effect in reducing the carrier density when the Si concentration was ≥4×1016 cm−3. The net carrier concentration profiles resulting from 29Si implantation into GaAs containing 1018 cm−3 of total V had sharper tails than for similar implantation into undoped material, indicating the presence of less than 1016 cm−3 V-related acceptors. Photoluminescent spectra exhibited the characteristic V+3 intracenter emission at 0.65–0.75 eV. No other deep level photoluminescence was detected. For a V concentration of 1016 cm−3 only 2.5×1013 cm−3 was electrically active. Over the entire V concentration investigated this impurity was predominantly (≥99%) inactive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101287
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  • 4
    Electronic Resource
    Electronic Resource
    Carbon and zinc delta doping for Schottky barrier enhancement on n-type GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1342-1344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of thin (50–100 A(ring)), C or Zn δ-doped layers on n-type GaAs is shown to yield large enhancements in the effective Schottky barrier height (ΦB) of TiPtAu contacts subsequently deposited on the material. The incorporation of a single C δ-doped layer (p=1.5×1020 cm−3, 50 A(ring) wide) within 100 A(ring) of the surface leads to a barrier height of 0.93 eV, a significant increase over the value for a control sample (0.76 eV). The use of two sequential δ-doped layers leads to an apparent barrier height in excess of the GaAs band gap (ΦB=1.67 eV). This appears to be consistent with the predictions of a unified defect model. Zinc δ doping (p∼3×1018 cm−3) in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101650
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  • 5
    Electronic Resource
    Electronic Resource
    Damage-induced high-resistivity regions in Al0.48In0.52As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1786-1788 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistivity of oxygen-implanted n+-Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post-implant annealing temperature. The sheet resistivity is 〉105 Ω/(D'Alembertian) after implantation for doses in the range 1012–8×1013 cm−2, and increases to 〉107 Ω/(D'Alembertian) after annealing at 500 °C. Temperature-dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage-related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen-related deep acceptors in AlInAs, in contrast to the results for AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102173
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Interaction of Be and O in GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1540-1542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen implanted at a concentration above that of the acceptors in p-type GaAs is shown to create thermally stable, high-resistivity material only in the case of Be doping in the GaAs. The effect is not seen for Mg, Zn, or Cd doping. Similarly, there is no apparent interaction of O with n-type dopants (S or Si) in our measurements. The Be-O complex in p-type GaAs is a deep donor, creating material whose sheet resistivity shows an apparent thermal activation energy of 0.59 eV for a structure involving a thin layer (5000 A(ring)) of oxygen compensated, Be-doped GaAs on a semi-insulating substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101344
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  • 7
    Electronic Resource
    Electronic Resource
    Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C2H6/H2 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5009-5017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etch rates of GaAs and AlxGa1−xAs (x=0.09–1) in C2H6/H2 were investigated as a function of time (1–12 min), gas flow rate (5–25 sccm), total pressure (4–30 mTorr), plasma power density (0.56–1.32 W cm−2), and percentage of C2H6 in the discharge (10%–50%). The etch rates are constant with time, and decrease with increasing Al content in the AlGaAs. The maximum etch rates occur at 25% by volume C2H6 in H2 and increase linearly with increasing power density. Increasing the total pressure at constant gas composition reduces the etch rates by approximately a factor of 2 between 4 and 30 mTorr. The etched surfaces have smooth morphologies for C2H6 concentrations less than ∼40% of the total gas volume. A layer of subsurface dislocations approximately 40 A(ring) deep were observed in GaAs by transmission electron microscopy for the highest-power density discharges, while the surfaces for all samples are As-deficient to a depth of ∼30 A(ring) after reactive ion etching. Polymer deposition is not significant for C2H6 volumes less than 40% of the total gas volume.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343773
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Elevated temperature reactive ion etching of GaAs and AlGaAs in C2H6/H2 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5018-5025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etch rate, surface morphology and atomic composition, and depth of hydrogen passivation of Si dopants in n-type GaAs and AlGaAs have been examined as a function of the temperature of the sample during reactive ion etching in C2H6/H2. While there is no temperature dependence of the etch rate of AlGaAs over the range 50–350 °C, the etching of GaAs shows an increase of a factor of 2 between 150 and 250 °C, decreasing at higher temperatures. The As-to-Ga ratio in the near-surface region of GaAs remains unchanged over the whole temperature range investigated and there is no polymer deposition. The etched surface morphology is smooth for both GaAs and AlGaAs for all temperatures while the depth of Si dopant passivation by hydrogen shows an increase with increasing substrate temperature during the etching treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343774
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  • 9
    Electronic Resource
    Electronic Resource
    Aluminum composition dependence of reactive ion etching of AlGaAs with CCl2F2:O2 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2137-2147 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The etch rate and surface chemistry of AlxGa1−xAs after reactive ion etching (RIE) in CCl2F2:O2 was examined as a function of etch time (1–22 min), plasma power density (0.3–1.3 W cm−2), pressure (1–30 mTorr), gas composition (0%–80% O2), gas flow rate (10–50 sccm), sample temperature (50–350 °C), and Al composition (x=0.15–1). The etch rate is nonlinear with time, and decreases rapidly with increasing AlAs mole fraction. Essentially no temperature dependence of the etch rate is observed under our conditions, and there are no major differences in the surface chemistries of AlGaAs etched at different temperatures. The formation of a thin layer (50–90 A(ring)) of AlF3 during the RIE treatment appears to control the etch rate, and the surface morphology becomes progressively smoother for increasing Al composition. No residual lattice disorder is detected by cross-sectional transmission electron microscopy under any of our conditions, although current-voltage measurements on Schottky barrier diodes fabricated after RIE show higher ideality factors and barrier heights than unetched control samples. Annealing at 500 °C for 30 s almost restores the initial electrical properties of the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344309
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  • 10
    Electronic Resource
    Electronic Resource
    Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2061-2064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in the near-surface electrical properties of n-type (n=1×1017 cm−3) GaAs and AlGaAs after reactive ion etching in C2H6/H2/Ar or CCl2F2/O2 discharges (4 mTorr, 0.85 W cm−2) were investigated by current-voltage (I-V) and capacitance-voltage measurements on Schottky diodes. Carrier reductions of approximately an order of magnitude were observed immediately after etching GaAs and AlGaAs in ethane-hydrogen-argon; much smaller changes (∼20%) were observed using freon-12–oxygen. For both gas chemistries, annealing in the range 200–300 °C produced the most ideal I-V characteristics in GaAs, whereas 300–400 °C was required for AlGaAs. Replacing H2 by D2 allowed high sensitivity atomic profiling using secondary ion mass spectrometry. Permeation of D2 to depths of ∼0.5 μm is observed in both GaAs and AlGaAs after etching—the D2 diffuses rapidly around 400 °C where dopant reactivation occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344296
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