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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Medical & biological engineering & computing 38 (2000), S. 610-616 
    ISSN: 1741-0444
    Keywords: Femoral anteversion ; 3D ; Modelling ; Measurement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract Femoral neck anteversion is the torsion of the femoral head with reference to the distal femur. Conventional methods that use cross-sectional computed tomography (CT), magnetic resonance or ultrasound images to estimate femoral anteversion have met with several problems owing to the complex three-dimensional (3D) structure of the femur. A 3D imaging method has been developed that virtually measures femoral anteversion on the 3D computer space with continuous CT slices; this 3D method provides more accurate and reliable results than conventional 2D CT measurements. A 3D modelling method is devised for the measurement of femoral neck anteversion. This method has advantages over the 3D imaging method, such as shorter processing time, reduced number of slices and an objective result compared with the 3D imaging method. The results of the 3D modelling method are compared with the conventional CT methods (2D CT method and 3D imaging method) using 20 dried femurs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Medical & biological engineering & computing 38 (2000), S. 603-609 
    ISSN: 1741-0444
    Keywords: Femoral anteversion ; Rendering ; 3D imaging ; Measurement
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Notes: Abstract Femoral neck anteversion is the torsion of the femoral head with reference to the distal femur. Conventional methods that use cross-sectional computed tomography (CT), magnetic resonance or ultrasound images to estimate femoral anteversion have met with several problems owing to the complex, three-dimensional (3D) structure of the femur. These problems include not only the difficulty of defining the direction of the femoral neck axis and condylar line but also the dependency upon patient positioning. In particular, the femoral neck axis, the direction of the femoral head, known as the major source of error, is difficult to determine from either a single or several two-dimensional (2D) cross-sectional images. A new method has been devised for the measurement of femoral anteversion using the 3D imaging technique. 3D reconstructed CT images from the femoral head and trochanter to the distal femur are used to measure the anteversion. It is necessary to remove the soft tissue from the CT images and extract just the bone part. Then, the femoral anteversion is measured from a computer-rendered femur image. The 3D imaging method is compared with both the conventional 2D method and the physical method using 20 dried femurs. For the physical method, which is used as a reference value, a special apparatus is devised. The average difference between the results of the physical method and those of the 2D CT method is 5.33°. The average difference between the results of the physical method and those of the 3D imaging method is 0.45°. Seventy-four patients, who suffer from toe-in-gait disease, are tested to compare the 3D imaging method with the conventional 2D CT method. The average difference between the 2D and 3D methods is 8.6°, and the standard is 7.43°. This method provides a very accurate and reliable measurement of femoral anteversion, as it is virtually equivalent to the direct measurement of bisected dried femur in vitro.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 422-428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the effect of topographic structure of surface roughness on the flow of a thin film over a rotating disk. Six factors, namely centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness, that affect the depletion of the film are considered. Depletion histories of a thin film are given for cases involving deterministic as well as stochastic descriptions of surface roughness. It has been found that surface roughness of the disk plays a significant role in thin-film flow, and different topographic structures of the surface roughness lead to different asymptotic limits of liquid retention. The interplay of topographic parameters such as the height, skewness, and frequency of surface asperities on lubricant retention is also investigated.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8324-8335 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, practical method is described to extract the carrier concentration and mobility of each component of a multicarrier semiconductor system (which may be either a homogeneous or multilayered structure) from variable magnetic field measurements. Advantages of the present method are mainly due to the inclusion of both the longitudinal and transverse components of the conductivity tensor and normalization of these quantities with respect to the zero-field longitudinal component of the conductivity tensor. This method also provides a simple, direct criterion by which one can easily determine whether the material under test is associated with a one-carrier or multicarrier conduction. The method is demonstrated for a simple one-carrier system [GaAs single-channel high-electron-mobility-transistor (HEMT) structure] and two multicarrier systems (an InGaAs-GaAs double-channel HEMT structure and two types of carriers present in an InGaAs single-channel HEMT structure). The analysis of the experimental data obtained on these samples demonstrates the utility of the method presented here for extracting carrier concentrations and mobilities in advanced semiconductor structures.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5461-5466 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recognizing the potential importance of diamond thin film growth from combustion environments, a computational investigation of diamond synthesis in low pressure premixed flames has been conducted. The model employed solves the two-dimensional continuity, momentum, global energy, and species conservation equations in stagnation point flow geometry, and accounts for gas phase and surface reaction kinetics. The heterogeneous mechanism employed to describe diamond growth assumes that the methyl radical is the primary growth precursor. The gas phase mechanism includes elementary reaction pathways which generate methyl radicals from acetylene and in addition, includes a mechanism for cyclization (the formation of benzene) via acetylene and ethylene precursors. In this way, the pathway towards soot formation, which is believed to be a consequence of the formation of fused polycyclic aromatics, is shown to be a possible explanation for an eventual decrease in diamond growth rates at increasing fuel to oxygen flow ratios. A competition between oxidative pyrolysis of post flame hydrocarbons and cyclization establishes a criterion for optimum growth conditions.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2593-2601 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depletion of thin liquid films due to the combined effect of centrifugation, surface roughness, and air shear has recently been studied.While surface roughness of a rotating solid disk can be represented by deterministic curves, it has been argued that spatial random processes provide a more realistic description. Chiefly because of surface roughness, there is an asymptotic limit of retention of a thin film flowing on the rotating disk. The aim of this article is twofold. First, the effect of disjoining pressure on the retention of a thin film is investigated. It is found that incorporating disjoining pressure term has small but still appreciable effect on the asymptotic limits of lubricant retention. For a partially wetting lubricant, the two components of the disjoining pressure function tend to have opposite influence on the lubricant retention; one enhances the retention, while the other diminishes it. Second, the robustness of stochastic description of surface roughness is examined. For a given mean and variance, it is noted that different probability distributions of the surface fluctuations lead, in the absence of air shear, to significantly different asymptotic limits of thin-film retention. If air shear is incorporated, this sensitivity is substantially attenuated.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1476-1479 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) spectroscopy, x-ray diffraction (XRD) method, and secondary ion mass spectroscopy (SIMS) were used to observe the radial distribution of the band-edge transition and modification of the band structure due to the variation of indium in 3 in. indium-alloyed semi-insulating GaAs (InxGa1−xAs) grown by the liquid-encapsulated Czochralski method. The data from room temperature PR measurements showed the variation of the transition energy with positions indicating the radial distribution of the indium content across the wafers; indium content being higher around the edge region than the central area. The splitting of the degenerate valence band around the edge region of the wafers was also shown in PR data due to the different indium content in adjacent regions where indium content varies rapidly. The XRD measurements showed the drastic change in the distribution of lattice constant on where the splitting of the heavy and light holes happened and the SIMS analysis was adopted to confirm the distribution of indium content across the wafer. The possible model was proposed from the experimental data. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2774-2778 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present contact-angle hysteresis and surface energy of differently treated indium–tin–oxide (ITO) thin films obtained from contact angles for liquids with different polar character. We find that the hysteresis and the polar and dispersion component of the surface energy depend strongly on the surface treatments. Oxygen-plasma treatments induce the highest polarity and the highest total surface energy, and we suggest that this improves the interface formation with polymers, and therefore, the performance of light-emitting diodes. We discuss the results in relation to the ITO surface roughness and chemical heterogeneity modified by the different treatments. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 3998-4009 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new procedure for calculating the nonlinear energy transfer and linear growth/damping rate of fully developed turbulence is derived. It avoids the unphysically large damping rates typically obtained using the predecessor method of Ritz [Ch. P. Ritz, E. J. Powers, and R. D. Bengtson, Phys. Fluids B 1, 153 (1989)]. It enforces stationarity of the turbulence to reduce the effects of noise and fluctuations not described by the basic governing equation, and includes the fourth-order moment to avoid the closure approximation. The new procedure has been implemented and tested on simulated, fully developed two-dimensional (2-D) turbulence data from a 2-D trapped-particle fluid code, and has been shown to give excellent reconstructions of the input growth rate and nonlinear coupling coefficients with good noise rejection. However, in the experimentally important case where only a one-dimensional (1-D) averaged representation of the underlying 2-D turbulence is available, this technique does not, in general, give acceptable results. A new 1-D algorithm has thus been developed for analysis of 1-D measurements of intrinsically 2-D turbulence. This new 1-D algorithm includes the nonresonant wave numbers in calculating the bispectra, and generally gives useful results when the width of the radial wave number spectrum is comparable to or less than that of the poloidal spectrum. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3187-3194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A matrix formalism for the Hall effect is presented for an arbitrary J-fold multicarrier semiconductor system. Explicit formulas are derived for important transport quantities such as the sheet resistance, the Hall coefficient, and the Hall scattering factor. For J≤3, these formulas reduce to simple closed-form expressions as a function of the applied magnetic field and the carrier densities and mobilities. The closed-form formulas are useful for the correct interpretation of the Hall effect in multicarrier semiconductor systems. The field dependence and asymptotic behavior of these formulas are also discussed.
    Type of Medium: Electronic Resource
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