Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1378-1380
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Properties of the silicon surface cleaned by the irradiation of the hydrogen electron cyclotron resonance plasma has been studied by x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and Fourier transform infrared spectroscopy. It was confirmed that the irradiation of the hydrogen plasma eliminated both a native oxide layer and a contaminated carbon layer from the silicon surface. In addition, it was found that the surface has the retardation effect on the air oxidation at room temperature. However, the plasma irradiation caused the minute roughness on the surface and hydrogen penetration into the bulk.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.105211
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