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  • 11
    Electronic Resource
    Electronic Resource
    Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al0.94Ga0.06As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al0.94Ga0.06As and Al0.98Ga0.02As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al0.94Ga0.06As layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119028
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  • 12
    Electronic Resource
    Electronic Resource
    Scalability of small-aperture selectively oxidized vertical cavity lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 823-825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the threshold properties of small area selectively oxidized vertical cavity lasers. Agreement for threshold gain versus laser size is found using the experimental intrinsic threshold voltage matched with a gain theory, as compared to a two-dimensional optical cavity simulation. Our analysis indicates the increasing threshold current density of small area lasers arises from both increasing threshold gain and the concomitant increasing leakage current. We further show that the optical loss can be reduced for lasers with areas as small as 0.25 μm2 while maintaining sufficient transverse optical confinement by displacing the apertures longitudinally away from the cavity and reducing the oxide thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118234
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  • 13
    Electronic Resource
    Electronic Resource
    Selective oxidation of buried AlGaAs versus AlAs layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1385-1387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report significant differences between the properties of buried oxides converted from AlGaAs and AlAs layers using selective wet oxidation. Layers of AlxGa1−xAs with x≥0.96 exhibit crystallographic dependent oxidation rates, while for layers with x≤0.92 the oxidation rate is isotropic. Mesas containing partially oxidized layers of AlAs are unstable to rapid thermal cycling and exhibit excessive strain at the oxide terminus, while mesas containing partially oxidized layers of AlGaAs are robust and lack evidence of strain. Finally, the oxidation of AlGaAs layers, rather than AlAs, is found to provide robust oxide apertures for reliable vertical-cavity surface emitting lasers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117589
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  • 14
    Electronic Resource
    Electronic Resource
    Broadband Bragg filter in microfabricated AlGaAs waveguides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of broadband Bragg filters in microfabricated AlGaAs waveguides. Electron-beam lithography and chemically assisted ion-beam etching were used to fabricate first-order gratings with 250 nm period. Bragg filters with rejection bandwidth ∼15 nm and centered at ∼1.6 μm are demonstrated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116473
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  • 15
    Electronic Resource
    Electronic Resource
    Valence band offset of GaAs/GaAs0.68P0.32 multiple quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2078-2080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements have been performed under hydrostatic pressure on GaAs/GaAs0.68P0.32 strained multiple quantum well samples grown by gas-source molecular beam epitaxy. The pressure induced crossover of the first confined electron state in the GaAs wells against the conduction band (001) X minima in the GaAs0.68P0.32 barriers has been observed, which allows a direct spectroscopic determination of the valence band offset for the heterostructure. As the result we obtain the unstrained valence band offset as 0.09±0.02 eV, which corresponds to an approximate 77:23 distribution of the energy gap difference in the conduction and valence bands, respectively, for the GaAs/GaAs0.68P0.32 system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109484
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  • 16
    Electronic Resource
    Electronic Resource
    In situ determination of phosphorus composition in GaAs1−xPx grown by gas-source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time an in situ determination of phosphorus compositions in a mixed group-V compound, such as GaAs1−xPx, grown by gas-source molecular beam epitaxy. Reflection high-energy electron diffraction intensity oscillations from As-limited and (As+P)-limited growth are observed on a Ga-rich GaAs surface. The phosphorus composition is therefore deduced from the different growth rates. Viability of this technique is strongly confirmed by the good agreement with the phosphorus compositions determined ex situ by x-ray rocking curve measurements on GaAs/GaAsP strained-layer superlattice structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105601
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  • 17
    Electronic Resource
    Electronic Resource
    Double-disk structure for output coupling in microdisk lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3167-3169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report our experiment on the use of a double-disk structure to couple light output from a microdisk laser which allows us to maintain a high Q value of the microdisk resonator. The small photon leakage rate from the lower lasing disk to the top waveguiding disk can be carefully controlled by choosing the distance between the two disks. Various structures can be fabricated on the top disk to couple the light out. In this letter, a simple opening in the top disk is used for output coupling. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112470
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  • 18
    Electronic Resource
    Electronic Resource
    InGaAs/InP and InAsP/InP quantum well structures on GaAs (100) with a linearly graded InGaP buffer layer grown by gas-source molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2001-2003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A linearly graded InxGa1−xP (x=0.48–1) buffer layer is used for growing a high-quality InP layer on a GaAs substrate. We show that an InxGa1−xP buffer layer is superior to an InyGa1−yAs buffer layer because it is transparent to long wavelengths and allows a less stringent composition control. InGaAs/InP single quantum wells and InAsP/InP multiple quantum wells grown on the InP/InxGa1−xP/GaAs substrate show comparable quality to similar structures grown on InP (100) substrates. Photocurrent spectra for the latter exhibit quantum-confined Stark effect near 1.3 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111719
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  • 19
    Electronic Resource
    Electronic Resource
    Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1833-1835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electroabsorption property of InAsP/InP strained multiple quantum wells (MQWs), grown by gas-source molecular beam epitaxy, for 1.3 μm modulator applications. Very sharp excitonic absorption at room temperature was observed. Electroabsorption measurements performed for a ring-shaped p-i-n diode, consisting of 10-period InAs0.41P0.59(100 A(ring))/InP(150 A(ring)) strained MQWs, reveal a significant red shift of the absorption peak with increasing reverse biases due to the quantum-confined Stark effect. This large energy shift (e.g., ∼18 meV at an external field of 57 kV/cm) is well accounted for in the "effective well-width'' model. The change of the absorption coefficient at a 22 meV detuning is as large as 3510 cm−1 with a small residual absorption, which can be very useful for 1.3 μm waveguide modulators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110806
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  • 20
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of InP on (111)B substrates by gas-source molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 281-283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP has been homoepitaxially grown on both exactly (111)B oriented and misoriented substrates by gas-source molecular beam epitaxy. The optimal growth condition for obtaining a mirrorlike surface was found to be a substrate misorientation of 0.5°–1° toward 〈110〉, a substrate temperature of 470 °C, and a V/III incorporation ratio close to unity. The unity V/III ratio was established readily by monitoring the specular beam intensity of reflection high-energy electron diffraction when the phosphorus beam was modulated, similar to migration enhanced epitaxy. The InP epilayers with specular surfaces are of high quality as characterized by x-ray diffraction, Hall measurements, and low-temperature photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108990
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