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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5403-5405 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed numerical diagonalization studies of the periodic Anderson Model on finite chains up to 6 sites, in the integral valence limit for T=0. We find that in the weak coupling (Kondo) region the hybridization between f and conduction electrons induces pronounced correlations between the f spins. These correlations are ferromagnetic for low filling and become antiferromagnetic close to half-filling, with a smooth transition between the limiting cases. In no limit can the physics be completely described by a Ruderman–Kittel–Kasuya–Yosida effective spin Hamiltonian, as f and conduction band electrons are always correlated. To study the onset of long range order we considered also a simpler model for the half-filled case, called "Kondo necklace.'' We studied the model at T=0 by numerical diagonalization and finite-size scaling, on chains up to 12 sites. We find that below a finite critical value of the Kondo coupling there exists a gapless phase with quasi long range antiferromagnetic correlations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6634-6636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have undertaken a first-principles theoretical study of the Anderson hybridization in cubic CeCd and CeAg as a function of volume reduction. We present results for the hybridization width Δ(ε) in both the J=5/2 multiplet and in the Γ8, Γ7 crystal field states of the f1 Ce configuration. We also calculate the hybridization contribution to the magnetic transition temperature. This is found to increase with pressure but is smaller than the experimental values, indicating that the Coulomb exchange contribution to the magnetic coupling is not negligible in these compounds.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1816-1820 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One-dimensional photonic crystals made of (Si/SiO2)m multilayers with m=2,...8 have been grown on SiO2 4-in. wafers by repeated polysilicon low-pressure chemical vapor deposition, oxidation, and wet etching steps. The poly-Si and SiO2 layers were about 220 and 660 nm thick, respectively, thus realizing λ/4 distributed Bragg reflectors. Spectroscopic ellipsometry in the 1.4–5 eV range was used to determine the dielectric function of poly-Si and the actual layer thicknesses, as well as to check the structural and compositional homogeneity of the structures. In order to measure the photonic crystal properties, specular reflectance and transmittance measurements were performed from 0.2 to 6 eV at different angles of incidence θ≤50° and for transverse electric and transverse magnetic polarizations. The stop-bands characteristic of Bragg reflector multilayers appear up to the fifth order and become more pronounced with increasing m, reaching almost complete rejection for m=4 periods. The experimental spectra were fitted by the transfer-matrix method, both versus θ and m. Moreover, the experimental stop bands of the finite multilayers matched the calculated photonic band gaps of an infinite one-dimensional photonic crystal very well. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6745-6751 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) at different temperatures and spectroellipsometry (SE) at room temperature were used to study, in a systematic and complementary way, the optical response of a series of strained and relaxed InxGa1−xAs (x〈0.15) epilayers. All the samples were grown by molecular-beam epitaxy on GaAs, both with and without a GaAs cap layer, which in the thinnest samples determines a single-quantum-well configuration. The effects of the strain on the optical structures E0, E1, and E1+Δ1 observed in the 1.2–3.3 eV photon-energy range were analyzed by fitting standard critical points (CP) line shapes to the PR and SE spectra. The CP experimental energies versus x were compared with the relations obtained in the framework of the elastic strain theory and, in the quantum-well structures, of the envelope-function scheme. The excellent agreement between experiment and theory allowed us to determine, independently and only by optical techniques, the strain ε and the composition x values, which compare well with those measured by x-ray diffraction. Additional information concerning the critical thickness for the pseudomorphic growth and the residual strain in quasirelaxed layers was achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 865-872 
    ISSN: 0392-6737
    Keywords: Elemental semiconductors (crystalline) ; Composite materials
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report absorption measurements on Ge nanoparticles in the range 0.6–6 eV. By reducing the dot average radius to about 13 Å, one observes a relevant blue-shift of theE 1+Δ 1 andE 2 peaks and a change of the oscillator strength of the two main structures. Simulations using effective-medium theories have been carried out and the embedding matrix contribution to the measured properties has been evaluated. The different behaviour of the absorption peaksE 1,E 1+Δ 1 andE 2 under quantum confinement has been related to their specific nature within the whole Brillouin zone.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 1473-1486 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Polaritons (including photon-photon and photon-magnon interactions) ; Level splitting and interactions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Nella teoria degli eccitoni di Wannier, la parte a lungo raggio e non analitica dell’interazione di scambio è generalmente espressa in termini dell’elemento di matrice di dipolo fra funzioni di Wannier. Noi mostriamo che può invece essere espressa in termini dell’elemento di matrice di dipolo fra funzioni di Bloch al centro della zona di Brillouin, senza assumere che le funzioni di Wannier siano localizzate. Otteniamo quindi un’espressione per lo splitting longitudinale-trasverso in termini dell’elemento di matrice di dipolo fra stato fondamentale del cristallo e stato eccitonico. Ciò è necessario per dimostrare che il polaritone trasverso del ramo superiore è degenere con l’eccitone longitudinale nel limitek ex→0. Otteniamo inoltre una nuova espressione per la parte a corto raggio dell’interazione di scambio, che è più appropriata per un calcolo microscopico e che calcoliamo nel caso del CuCl. Otteniamo un parametro di scambioΔ ex = 12.6 meV, in buon accordo col valore sperimentale.
    Abstract: Резюме В теории экситонов Ваннье дальнодействуйщая неаналитическая часть обменного взаимодействия обычно выражается через дипольный матричный элемент между функциями Ваннье. Мы показываем, что эта часть обменного взаимодействия может быть выражена через дипольный матричный элемент между функциями Б=qlоха без каких-либо предположений о локализации функций Ваннье. Мы получаем выражение для продольно-поперечного расщепления в терминах дипольного матричного элемента между основным состоянием кристалла и экситонным состоянием. Это выражение требуется, чтобы доказать, что поперечный поляритон является вырожденным с продольным экситоном в пределеk ex→0. Получается новое выражение для короткодействующей части обменного взаимодействия, которое более удобно для микроскопических вычислений и которое оценивается для случая CuCl. Вычисляется обменный параметрΔ ex = 12.6 мэВ, который хорошо согласуется с экспериментальной величиной.
    Notes: Summary In the theory of Wannier excitons, the long-range nonanalytical part of the exchange interaction is usually expressed in terms of the dipole matrix element between Wannier functions. We show that it can be expressed in terms of the dipole matrix element between zone-centre Bloch functions, without any assumption on the localization of Wannier functions. We obtain an expression for the longitudinal-transverse splitting in terms of the dipole matrix element between the crystal ground state and the excition state. This is required in order to prove that the transverse upper polariton is degenerate with the longitudinal exciton in the limitk ex→0. A new expression for the short-range part of the exchange interaction is also obtained, which is more suitable for microscopic calculations and which is evaluated for the case of CuCl. The resulting exchange parameter isΔ ex = 12.6 meV, which compares well with the experimental value.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1367-1370 
    ISSN: 0392-6737
    Keywords: Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1505-1508 
    ISSN: 0392-6737
    Keywords: Excitons and related phenomena (including electron-hole drops) ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III-V and II-VI inorganics ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A model for calculating exciton binding energies in quantum wells (QWs) is presented, which can be applied to situations in which one of the two band discontinuities is large, while the second one can be arbitrary (positive, negative, or zero). The model is applied to ZnSe/ZnSSe and InGaAs/GaAs QWs., The crossover between strong-and weak-confinement, regimes for excitons in narrow QWs is studied within a simplified model with two one-parameter, variational wave functions.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 847-859 
    ISSN: 0392-6737
    Keywords: Semiconductor-to-semiconductor contacts,p-n junctions ; Excitons and related phenomena (including electron-hole drops)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta uno studio sistematico della luminescenza e della riflettività di strutture a buche quantiche multiple di GaAs/Ga1−x Al x As da 12K a temperatura ambiente. Un confronto diretto tra i picchi di fluorescenza dovuti a stati nelle buche quantiche e a quelli nell'arseniuro di gallio, cosí come il confronto tra fotoluminescenza e riflettività, forniscono una prova diretta del ruolo degli eccitoni a tutte le temperature. L'analisi spettrale della fluorescenza a temperatura ambiente ci consente di identificare il contributo degli eccitoni di buca pesante, degli eccitoni di buca leggera e degli stati del continuo. Un'analisi dettagliata delle energie di transizione in funzione della temperatura mostra che l'energia di confinamento aumenta del 5% quando la temperatura aumenta da 12K a temperatura ambiente. Questo effetto è dovuto alla variazione delle masse effettive dell'elettrone e della buca.
    Abstract: Резюме Мы исследуем фотолюминесценцию и отражение структур множественных квантовых ям в GaAs/Ga1−x Al x As в области от 12K до комнатной температуры. Прямое сравнение между эмиссионными пиками для квантовых ям и для объема арсенида галлия, а также между спектрами фотолюминесценции и отражения обнаруживает наличие экситонных особенностей при всех исследованных температурах. Подгоняя форму линий для спектра фотолюминесценции при комнатной температуре, мы определяем вклад экситонов тяжелых дырок, экситонов легких дырок и состояний непрерывного спектра. Из подробного анализа энергий перехода в зависимости от температуры показывается, что энергия удержания увеличивается на 5% при возрастании температуры от 12K до комнатной температуры. Отмечается, что этот эффект обусловлен изменением эффективных масс электрона и дырки.
    Notes: Summary We report a study of photoluminescence and reflectivity of GaAs/Ga1−x Al x As multiple quantum well structures from 12 K to room temperature. A direct comparison between the emission peaks of the quantum wells and of bulk GaAs, as well as between the photoluminescence and reflectance spectra, shows strong evidence of exciton features up to room temperature. By means of a line shape fit of the room temperature emission spectrum, we determine the contribution of the heavy and light hole excitons and of the continuum states. From a detailed analysis of the transition energies, a 5% increase of the confinement energy is found to occur when the temperature increases from 12 K to room temperature. This effect is shown to be due to the change in the electron and hole effective masses.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1211-1218 
    ISSN: 0392-6737
    Keywords: Polaritons (including photon-phonon and photon-magnon interactions) ; Electrons states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; III–V and II–VI inorganics ; Excitons and related phenomena (including electron-hole drops) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A description of polariton effects on excitons in multiple quantum wells (MQWs), superlattices (SLs), and semiconductor microvavities is presented. The non-local semi-classical theory in a transfer matrix formulation is adopted. The radiative width in MQWs atk=0 increases first with the number of wellsN, then goes to zero asN→∞, where stationary SL polaritons are recovered. The crossover from weak- to strong-coupling regimes for QW excitons in microcavities is described. The complex energies of the mixed exciton-radiation modes are shown to be measurable by time-resolved transmission experiments.
    Type of Medium: Electronic Resource
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