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  • 1
    Electronic Resource
    Electronic Resource
    Production of semi-insulating layers in n-doped InP by Fe implantation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5085-5094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of Fe implantation and damage annealing in indium phosphide is presented. The technological goal was to obtain thermally stable semi-insulating layers in n-type InP. Different characterization techniques were employed, including structural (x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy), chemical (secondary ions mass spectrometry), and electrical (current-voltage) measurements. Both undoped and n-type (Sn) doped substrates were implanted with Fe doses ranging from 5×1011 to 2.2×1014 cm−2 and annealed at a temperature of 650 °C. The high doses used to compensate n+ doping caused amorphization of the material. The reordering process of the amorphous layers and its influence on the Fe redistribution properties were studied in detail. The activation of the implanted Fe atoms after annealing was derived. Although the recovery process of the amorphized layer appears to be rather complex, our results show that good crystal quality and full compensation can be reached also for n+ doped substrates, leading to resistivity values above 2×107 Ω cm, even starting from an initial doping level as high as 1.4×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357220
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Production of semi-insulating layers in n-doped InP by Fe implantation'' [J. Appl. Phys. 76, 5085 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4159-4159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359614
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  • 3
    Electronic Resource
    Electronic Resource
    Al-O interactions in ion-implanted crystalline silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2070-2077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation and dissolution of Si-O-Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357616
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  • 4
    Electronic Resource
    Electronic Resource
    On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1−xAs/GaAs single heterostructures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1975-1983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inx Ga1−x As/GaAs single heterostructures have been grown by molecular-beam epitaxy with different growing rates and In molar fractions. Indium composition, layer thickness, and residual strain have been measured mainly by Rutherford backscattering/channeling spectrometry and the results on selected samples compared with the results of other techniques like Auger electron spectroscopy and single- and double-crystal x-ray diffraction. Cathodoluminescence, x-ray topography, transmission electron microscopy, and ion dechanneling have been employed to observe dislocations and to characterize their nature and density. While the onset of misfit dislocations has been found to agree with the predictions of the equilibrium theory, the strain release has been found to be much lower than predicted and the results are compared with the available metastability or nucleation models. Present results are in best agreement with nucleation models. Moreover, annealing experiments show that these heterostructures are at (or very close to) thermodynamic equilibrium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344335
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4748-4755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model to compute the strain relaxation rate in InxGa1−xAs/GaAs single layers has been tested on several compositionally graded buffer layers. The existence of a critical elastic energy has been assumed as a criterion for the generation of new misfit dislocations. The surface strain accuracy results are within 2.5×10−4. The influence of different grading laws and growth conditions on residual strain, threading dislocation density, misfit dislocation confinement, and surface morphology has been studied. The probability of dislocation interaction and work hardening has been shown to strongly influence the mobility and the generation rate of the dislocations. Optimization of the growth conditions removes residual strain asymmetries and smoothes the surface roughness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371439
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  • 6
    Electronic Resource
    Electronic Resource
    N and Ar ion-implantation effects in SiO2 films on Si single-crystal substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3528-3536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemistry of an argon-ion-irradiated interface between an amorphous silicon dioxide film and a silicon single-crystal substrate was studied by determining the kind and depth distribution of compounds formed after nitrogen implantation at a depth more shallow than the SiO2 film thickness. With this study we intended to obtain some insight into the chemical and physical processes involved in the formation of silicon oxynitrides in silica as a consequence of nitrogen ion implantations. Samples were mainly characterized by x-ray photoelectron and Fourier-transform infrared spectroscopies. Scanning electron microscopy, Rutherford backscattering spectrometry, nuclear reaction analysis, and secondary-ion mass spectrometry techniques were also used to complete the set of results. The experimental evidences are consistent with a picture of an argon-induced radiation damage in terms of Si—O and Si—Si bond breaking in the SiO2 and in the silicon substrate regions, respectively. The subsequently implanted nitrogen atoms are drawn toward the interface by a chemical driving force, and there interact with unsaturated silicon bonds to produce SiOxNy or SiNz compounds. The formation of a large amount of these compounds at the interface is responsible for very rough surface morphological features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349248
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  • 7
    Electronic Resource
    Electronic Resource
    WNx Schottky diodes on plasma treated GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2356-2364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the GaAs surface condition on the properties and thermal stability of WNx Schottky diodes on GaAs has been studied by performing in situ H2 and N2 plasma treatments just before the WNx sputter deposition. The WNx/GaAs contacts have been investigated by x-ray photoelectron spectroscopy, Rutherford backscattering, nuclear reaction analysis, secondary ion-mass spectroscopy, x-ray diffraction, and transmission electron microscope and correlated to electrical current-voltage and capacitance-voltage measurements. A strong correlation was found between the diode properties and the surface conditions, both for the as-deposited samples and for samples annealed in the range 700–850 °C. Poor rectifying properties were obtained for the plasma-cleaned diodes due to the cumulative effects of plasma cleaning and sputter deposition. After annealing, improved characteristics were generally found. The highest Schottky barrier height values φI-V=0.76 V, which were found for the H2 plasma treated diodes annealed at 800 °C, were almost independent of the WNx composition and sputtering conditions. The H2 treated samples also showed the smoothest WNx/GaAs interface. HCl cleaned and N2 treated surface also showed high-barrier height and small interfacial reactions after high-temperature annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348718
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic distortion field in single layer heterostructures in the presence of misfit dislocations (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 531-539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The elastic distortion field in (001)-grown lattice mismatched heterostructures of diamond or zinc-blende structure having misfit dislocations at the interface is calculated within the linear elasticity theory. Not only the misfit dislocation densities in the two 〈110〉 directions but also the distribution of the possible Burgers vectors are taken into consideration. A transition layer where the elastic field is appreciably laterally nonuniform extends from the interface up to a distance of the same order of the mean dislocation spacing. It is shown that this transition layer affects x-ray diffraction measurements. Beyond this region, the elastic distortion field is uniform and is found to depend only on the mean values of the Burgers vectors associated with the two dislocation distributions. In particular it is shown that in general the strain field, i.e., the symmetric part of the elastic distortion field, is not biaxial. The three independent parameters describing the lattice deformations in the epilayer depend not only on the projections on the interface of the edge components but also on the screw components of the Burgers vectors. The predictions of this model are tested on InxGa1−xAs/GaAs samples analyzed by means of channeling and double crystal x-ray diffractometry. The unbalance of the dislocation densities in the two 〈110〉 directions measured by the dechanneling behavior of the samples agrees rather well with the prediction of the model on the basis of the measured asymmetries of the strain field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346825
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical and optical characterization of Er-implanted Si: The role of impurities and defects (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4936-4942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of Er-implanted Si are shown to be critically dependent on the presence of impurities and defects. A large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by coimplanting Er with O or C at 300 °C. The use of C also allows one to obtain a good quality crystal after implantation and annealing. This is shown to be crucial in the photoluminescence process. In fact, in spite of the large amount of active Er atoms, photoluminescence is inhibited in the presence of the high concentration of precipitates and crystallographic defects which are left after annealing of the Er and O coimplants. The photoluminescence intensity is, on the other hand, enhanced by the high concentration of active Er atoms in the defect-free crystal which is left after annealing of the Er and C coimplants. Moreover, a clear shift in the main photoluminescence peaks is observed in Er- and C-coimplanted samples as a result of the different surroundings experienced by the Er atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354330
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  • 10
    Electronic Resource
    Electronic Resource
    Microscopical aspects of boron diffusion in ultralow energy implanted silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1869-1871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient enhanced diffusion of ultralow energy implanted B is reported in this letter. The mechanism giving rise to an enhancement of the diffusion during postimplantation anneal is investigated in detail by monitoring the diffusion of B as a function of temperature in the range 600–750 °C, for implant energies of 500 eV and 1 keV. The contribution of several classes of defect clusters to the anomalous diffusion phenomenon has been detected and interpreted. Both an ultrafast diffusion, occurring during the ramp-up of the thermal process, and a transient enhancement of the diffusion with characteristic decay times shorter by orders of magnitude than the known transient enhanced diffusion lifetimes, have been evidenced. The activation energy for the enhanced diffusion has been measured and found to be 1.7 eV. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124855
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