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  • 1
    Electronic Resource
    Electronic Resource
    Capacitance–voltage and current–voltage characterization of AlxGa1−xAs–GaAs structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360416
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  • 2
    Electronic Resource
    Electronic Resource
    The occurrence of cross hatch during GaAs homoepitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4165-4168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of a morphological defect structure, "cross-hatch'' and the experimental circumstances that lead to its occurence during GaAs homoepitaxy. Photoluminescence, x-ray diffraction and transmission electron miscroscopy (TEM) results obtained on cross-hatched samples are presented and discussed in regards to the nature and origin of the defect structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337500
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  • 3
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction studies on the molecular-beam-epitaxial growth of AISb, GaSb, InAs, InAsSb, and GaInAsSb on GaSb (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4572-4577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of materials grown by molecular-beam epitaxy (MBE) is closely related to the surfaces kinetics in which the surface reconstructions, growth temperatures and molecular species play important roles. We present our studies on the MBE growth conditions, surface reconstructions and surface morphologies of A1Sb, GaSb, and InAs grown on (100) GaSb, and of InAsSb and GaInAsSb lattice matched to GaSb using dimers As2 and Sb2 in a wide temperature range of ∼400–650 °C. Certain surface reconstructions for GaSb and InAs which have not been reported in the literature are identified, and the conditions for their existence are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335362
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  • 4
    Electronic Resource
    Electronic Resource
    Lattice-mismatch-generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 520-530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed transmission electron microscopy and x-ray double-crystal diffractometry study of the lattice-mismatch-induced defect structures in InP grown on (100) GaAs substrate and vice versa by chemical beam epitaxy. A rough estimate of the dislocation densities in GaAs on InP is 2×1010 cm−2 at the interface and 5×107 cm−2 at the surface of the epilayer. The corresponding values in InP on GaAs are slightly lower as expected for the compressive stress state for InP. The majority of the dislocations lie on the {111} slip planes with 1/2 [110]- and 1/2 [101]-type Burgers vectors. A cross-grid-type interfacial misfit dislocation array is not observed. Instead, a complicated dislocation structure near the interface, consisting of overlapping pyramidal dislocation tangles (PDT) similar to those observed previously in InGaAs on InP caused by interfacial misfit particles, is presented. The interfacial dislocations form a cellular structure in GaAs on InP and a random structure in InP on GaAs. A Moiré fringe spacing study of InP on GaAs indicates a localized change in composition at the interface, possibly due to As incorporation or GaAs/InP intermixing. The formation of PDT defects and the variation in composition at the interface suggest a breakdown of layer-by-layer growth in the initial stage of growth which results in island nucleation. A dislocation mechanism for the PDT formation is also proposed. All epilayers prepared by chemical beam epitaxy (CBE) without two-stage growth are specular. X-ray rocking curve linewidth measurement shows a general reduction in the linewidth with increasing growth temperature and is insensitive to the substrate misorientation. Fine surface morphology revealed by Nomarski interference microscopy shows no correlation with x-ray linewidth. Results on the reduction of dislocation by varying growth temperature, substrate misorientation angle, and using AlGaAs/GaAs superlattice barriers for dislocation propagation are presented and their effectiveness are discussed. A realistic scheme to achieve an unwarped wafer with low dislocation density is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343568
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  • 5
    Electronic Resource
    Electronic Resource
    Selectively δ-doped quantum well transistor grown by gas-source molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3324-3327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical measurements on structures generated by δ doping the AlGaAs barriers of a GaAs quantum well. These structures are made unique by quantum size effects that occur both in the δ-doped barrier and in the GaAs well. Both the Hall-effect and capacitance-voltage measurements reveal that high-density, 4×1012 cm−2, two-dimensional electron gas forms in the well along with good mobility. We fabricate field-effect transistors with this structure to obtain transconductances of 300 mS/mm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341513
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion studies of the Si δ-doped GaAs by capacitance-voltage measurement (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1578-1580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using triethylgallium and arsine, high-quality GaAs can be grown at a relatively low substrate temperature of 500 °C by chemical beam epitaxy. Such a low temperature has the advantage of a negligible Si diffusion effect. Capacitance-voltage (C-V) measurements of the Si δ-doped GaAs show extremely narrow profile widths of 22 A(ring) at 300 K and 18 A(ring) at 77 K, indicating a very high degree of Si spatial localization has been achieved. The subsequent annealing experiments reveal that significant Si segregation and diffusion exist at a high growth temperature of ∼600 °C, usually employed in conventional molecular-beam epitaxy. The C-V widths of the annealed δ-doped structures also provide an excellent measure to determine the Si diffusion constant in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341789
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  • 7
    Electronic Resource
    Electronic Resource
    Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2302-2307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observations of a damped intensity oscillation using reflection high-energy electron diffraction during the growth of GaAs by chemical beam epitaxy using triethylgallium and arsine are reported. It is experimentally demonstrated that the As flux can be instantly shut off without any memory effect by measuring the Ga-induced intensity variation and the subsequent As-induced oscillations. The Ga deposition, free of any background As contamination, makes possible the direct determination of metal-alkyl adsorption and pyrolysis efficiency on the hot substrate surface. At 530 °C a (4×6) diffraction pattern is observed when Ga is deposited alone. The appearance of this (4×6) reconstruction along with the associated intensity behavior indicates that the first monolayer of Ga grows two-dimensionally. This can be understood qualitatively in terms of the simple kinematic model involving only surface roughness. These observations support a two-dimensional growth mechanism in the growth process. Furthermore, the ability to control submonolayer deposition of pure Ga coupled with the in situ electron-diffraction monitoring technique presents a new growth configuration of atomic layer epitaxy to be realized by chemical beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339489
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  • 8
    Electronic Resource
    Electronic Resource
    Room-temperature optically pumped laser oscillation at 2.07 μm from Ga0.85In0.15As0.13Sb0.87/ Al0.4Ga0.6As0.035Sb0.965 double heterostructures grown by molecular-beam epitaxy on GaSb substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4087-4089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth by molecular-beam epitaxy of high-quality Ga0.85In0.15As0.13Sb0.87 active layers with Al0.4Ga0.6As0.035Sb0.965 cladding layers on GaSb substrates by molecular-beam epitaxy is reported. The lattice match of the active layer to the substrate is Δa/a ∼4 ×10−3. Optically pumped laser oscillation was observed from 80 to 300 K with T0=55 K for T〈225 K and T0=32 K for 225〈T〈300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337487
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of InAsSb alloy and InAsSb/GaSb superlattice lattice matched to (100) GaSb by molecular-beam epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 205-207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth conditions to achieve high-quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular-beam epitaxy are described. The present results indicate that optical pyrometry is a reliable method to determine the growth temperature, and a stable substrate temperature is of critical importance in achieving homogeneous InAsSb composition throughout the growth period. The quality of these epilayers is evaluated by double x-ray diffraction measurement, reflection high-energy electron diffraction study, Nomarsky microscopy, and low-temperature photoluminescence. The optical quality is further demonstrated by the optically pumped coherent emission at ∼3.9 μm observed from an InAsSb active layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337682
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  • 10
    Electronic Resource
    Electronic Resource
    InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1366-1368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the operation of strained-layer InAsyP1−y/InP multiple quantum well optical modulators at wavelengths compatible with solid-state lasers such as neodymium-doped yttrium aluminum garnet. A structure having 50 periods of 100 A(ring) InAsyP1−y quantum wells with 100 A(ring) InP barriers is described that has an exciton peak at 1.05 μm and a single pass transmission contrast ratio of 1.4. Favorable comparison is made to similar InxGa1−xAs/GaAs structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104310
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