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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1470-1475 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the annealing temperature dependence of structural and electrical properties in heavily arsenic implanted GaAs which has a similar amount of excess arsenic to low temperature GaAs (LT-GaAs). The fundamental properties of this material are quite similar to those of LT-GaAs. High resolution x-ray diffraction measurements have revealed that it has an increased lattice constant, which is reduced to the value of bulk GaAs by annealing between 300 and 400 °C. Electrical conduction in this material is dominated by hopping between deep states, which is also reduced by annealing above 350 °C. In samples annealed at temperatures ranging from 600 to 850 °C, the dominant electron trap is EL2; it has been confirmed by resistivity measurements with n-i-n structures that the Fermi level is pinned by EL2. In samples annealed below 500 °C, the dominant electron trap is not EL2 but the U-band, although electron paramagnetic resonance measurements show the existence of a large concentration of the ionized arsenic antisite defect (AsGa+). This supports the notion that the U-band is formed by AsGa defects with slightly modified carrier emission properties compared with EL2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a new Brillouin spectroscopic technique evidences the existence of internal stresses in white plasma assisted chemical vapor deposited diamond and allows a first assessment concerning their magnitude. The evaluation of the internal stresses is based on the pressure coefficients related to the longitudinal and transverse elastic constants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3381-3385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3053-3060 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Current sources in the human body can be localized by measuring the biomagnetic fields with multichannel SQUID systems. Important system aspects are the noise level, the ambient field suppression, the dynamic range, the reliability, the number of channels, and the arrangement of gradiometers. From the user's point of view the most important quality factor is the accuracy with which a current dipole can be localized. A test procedure is proposed to determine the localization power of the system. A 31-channel-SQUID system is presented together with the results of the test. The crucial parts of the system determining the accuracy are pointed out.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2556-2558 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV (T=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron–phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II–VI compounds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract— A new combined ion-exchange and thin-layer-chromatographic procedure is described which separates and measures quantitatively, after intraventricular injection of [3H]dopamine (DA), the rat brain content of labelled noradrenaline (NA) and the following labelled noradrenaline metabolites: free 3-methoxy-4-hydroxyphenylethyleneglycol (MOPEG), conjugated MOPEG, free plus conjugated dihydroxyphenylethyleneglycol (DOPEG), vanillic mandelic acid (VMA) and normetanephrine (NM). Labelled dopamine and its metabolites were also measured. The time-course study performed from 5 min to 24 h after [3H]DA showed that MOPEG and DOPEG, mainly as conjugates, are major NA metabolites whereas VMA is a very insignificant NA metabolite in the rat brain. A very rapid initial increase of [3H]NM, free MOPEG and conjugated MOPEG was found during the time interval where the [3H]NA biosynthesis is very high (0–15 min). This combined with the finding that these metabolites stabilize at lower levels during the [3H]NA ‘storage phase’ (9–24 h) provides a strong indication that newly synthesized NA preferentially is metabolized. Our measurements of endogenous NA, free MOPEG and conjugated MOPEG provide additional support. The injections of various decreasing doses of [3H]DA (3·08–0·0010 μg) showed that the proportions of total [3H]MOPEG and total [3H]DOPEG to [3H]NA were constant after all [3H]DA doses investigated. This finding indicates that the [3H]NA synthesized in situ behaves as a tracer, even after injections of non-tracer doses of [3H]DA. The results seem thus to indicate that the present technique provides a powerful tool for the investigations on central noradrenaline metabolism.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 28 (1963), S. 1935-1936 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1365-2826
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Changes in growth hormone-releasing hormone (GHRH), GHRH-receptor (R), somatostatin and interleukin (IL)-1β mRNA levels were determined in fetal rat hypothalamic cultures after administration of IL-1β (1, 10, 100 ng/ml, 2 h incubation), and in adult rat hypothalamus 5 h after intracerebroventricular injection of IL-1β (2.5 and 25 ng). IL-1β stimulated GHRH-R mRNA expression both in vitro (10 and 100 ng/ml) and in vivo (2.5 and 25 ng). Somatostatin mRNA was significantly stimulated and GHRH mRNA slightly reduced in vitro, while these mRNA species were not altered in vivo in response to IL-1β. IL-1β stimulated its own expression both in vitro (10 and 100 ng/ml) and in vivo (25 ng). IL-1β-induced mRNA responses occurred 2 h after treatment in vitro (incubation times, 30 min to 6 h). IL-1β also elicited slight GHRH releases in vitro. Up-regulation of hypothalamic GHRH-R by IL-1β may explain previous findings suggesting that IL-1β stimulates GHRH activity.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: The availability of molecular markers linked to mildew resistance genes would enhance the efficiency of apple-breeding programmes. This investigation focuses on the identification of random amplified polymorphic DNA (RAPD) markers linked to the Pl1 gene for mildew resistance, which has introgressed from Malus robusta into cultivated apples. The RAPD marker technique was combined with a modified ‘bulked seg-regant analysis’ mapping strategy. About 850 random decamer primers used as single primers or in combinations were tested by PCR analysis on the basis of resistant and susceptible DNA pools. Selected primers producing RAPD fragments were applied in an additional selection step to M. robusta and genotypes representing intermediate breeding stages of the breeding population 93/9, for which a 1:1 segregation could be observed for the resistance trait. Seven RAPD markers, all representing introgressed DNA sequences from M. robusta, were identified and arranged with the Pl1 locus in a common linkage group. The two most tightly-linked RAPD markers, OPAT20450 and OPD21000 were mapped with a genetic distance of 4.5 and 5 cM, respectively, from the Pl1 gene. Both markers are suitable for marker-assisted selection in apple breeding. The polymorphic DNA fragment OPAT20450 was cloned and sequenced, and longer primers for the generation of a sequence-characterized amplified region (SCAR) marker have been constructed; this marker was easier to score than the original RAPD marker.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 13 (1974), S. 719-723 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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