ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC BJTs show instability in the I-V characteristics after as little as 15 minutes ofoperation. The current gain reduces, the on-resistance in saturation increases, and the slope of theoutput characteristics in the active region increases. This degradation in the I-V characteristicscontinues with many hours of operation. It is speculated that this phenomenon is caused by thegrowth of stacking faults from certain basal plane dislocations within the base layer of the SiC BJT.Stacking fault growth within the base layer is observed by light emission imaging. The energy forthis expansion of the stacking fault comes from the electron-hole recombination in the forwardbiased base-emitter junction. This results in reduction of the effective minority carrier lifetime,increasing the electron-hole recombination in the base in the immediate vicinity of the stackingfault, leading to a reduction in the current gain. It should be noted that this explanation is only asuggestion with no conclusive proof at this stage
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1409.pdf
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