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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1565-1569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the temperature dependence of the carrier density in epitaxial layers of semiconductors deposited on semi-insulating substrates when the potentials at the surface and the substrate interface are pinned. The results of these calculations are compared to experiments on thin, nominally undoped p-type layers of GaAs deposited epitaxially on EL2-dominated substrates. The theory predicts that as the temperature is lowered to some critical value the depletion layers at the edges of the epilayer overlap for thin, lightly doped samples. Below this value the carrier density decreases exponentially with inverse temperature with an activation energy which depends on the surface and interface potentials, as well as on the dopant concentration and the width of the layer. This activation energy can be derived analytically for strong depletion. In the intermediate range between negligible and complete depletion of the layer the carrier density must be obtained by numerical methods, and we present the results of such a calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349518
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally stable ohmic contacts to n-type GaAs. VIII. Sputter-deposited InAs contacts (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2475-2481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and microstructure of InAs ohmic contacts to n-type GaAs, prepared by sputter-depositing a single target, were studied by measuring the contact resistance (Rc) by the transmission line method and analyzing the interfacial structure by x-ray diffraction and cross-sectional transmission electron microscopy. Current-voltage measurement of an as-deposited InAs/W contact showed Schottky behavior, where the W layer was used as a cap layer. The InAs layer had an amorphous structure and a uniform oxide layer was observed at the InAs/GaAs interface. Even after annealing at 800 °C, ohmic behavior was not obtained in this contact because the intervening oxide layer prevented the InAs and GaAs interaction. By adding Ni to the InAs/W contacts (where Ni was deposited by an evaporation method), the interaction between the InAs and the GaAs was enhanced. Nickel interacted with As in the InAs layer and formed NiAs phases after annealing at temperature above 600 °C. The excess In in the InAs layer reacted with the GaAs substrate, forming InxGa1−xAs phases which covered about 80% of the GaAs interface. The Rc values of ∼0.4 Ω mm were obtained for InAs/Ni/W and Ni/InAs/Ni/W contacts at annealing temperatures in the range of 750–850 °C. These contacts contained only high melting point compounds and the contacts were stable during annealing at 400 °C for more than 100 h after ohmic contact formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346509
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  • 3
    Electronic Resource
    Electronic Resource
    Ionic solids at high pressures and elevated temperatures: MgO (periclase) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6792-6799 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An equation of state for MgO is calculated for conditions of high pressure and temperature using atomistic simulations within the quasiharmonic approximation with two-body potentials and a simple shell model. It is shown that experimental Hugoniot data can be reproduced accurately; other important properties are also examined including various quantities of geophysical interest. Results for the Helmholtz free energy and internal energy surfaces A(V,T) and U(V,T) are presented in parametrized form.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461517
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  • 4
    Electronic Resource
    Electronic Resource
    Threshold shifting in pseudomorphic semiconductor-insulator-semiconductor heterostructure field-effect transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2285-2287 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic (In,Ga)As layers are used in GaAs-based semiconductor-insulator- semiconductor (SIS) structures to shift the threshold voltage from the natural, near-zero value. The threshold voltage is shifted positively for (In,Ga)As gate layers, and negatively for (In,Ga)As channel layers, by the (In,Ga)As/GaAs conduction-band offset. The thermionic and field emission barrier heights agree with shifts obtained in capacitance-voltage characteristics. The structures withstand implant activation anneals, establishing a simple technology to create either enhancement or depletion-mode devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104900
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  • 5
    Electronic Resource
    Electronic Resource
    Resonant indirect Fowler–Nordheim tunneling in Al0.8Ga0.2As barrier (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 266-268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oscillatory current-voltage characteristics of n+-GaAs/semi-insulating Al0.8Ga0.2As/nGaAs heterojunction barriers (400 A(ring) thick) grown by molecular beam epitaxy on n+-GaAs (100) substrates are observed at 4 K when the heterostructures are placed under the transverse uniaxial stress along 〈011〉 direction (perpendicular to current direction) above 4 kbar. We attribute these oscillations to the resonant indirect Fowler–Nordheim tunneling via 〈011〉 oriented transverse X valleys, where the change of wave vector is required for tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104684
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of minority-carrier mobility and recombination time in p-type GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1268-1270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron mobility in p-type GaAs, μpe, has been determined as a function of temperature by measuring the common-emitter cutoff frequency, fT, of an AlGaAs/GaAs n-p-n heterojunction bipolar transistor. The base was 0.6 μm thick and it was doped with 4×1018 cm−3 Be. The 300 K value of 1055 cm2/V s and 79 K value of 5000 cm2/V s for μpe are comparable to the previously measured values. The discrepancy with the calculated values is pointed out. The recombination lifetime is also measured as a function of temperature for minority carriers. The results agree reasonably well with the calculated radiative recominbation time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104332
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  • 7
    Electronic Resource
    Electronic Resource
    Electron mobility in p-type GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 654-656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mobility of electrons in p-type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm−3. At 77 K, μPn =6000 cm2/(V s). The room-temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n-type material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99395
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  • 8
    Electronic Resource
    Electronic Resource
    Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1533-1535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the electron velocity in low-doped GaAs and in AlGaAs/GaAs modulation-doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in dc measurements at these fields, this measurement uses 35 GHz radiation to supply the electric field. These measurements indicate that the peak velocity for electrons in the heterostructures is lower than for electrons in bulk low-doped GaAs. This result is explained in terms of modified intervalley transfer, real space transfer, and an enhanced scattering with polar optical phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98626
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2546-2548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1−xAs of very low Al content. For the first time, discrete emission rates corresponding to different local configurations of Ga and Al atoms around the Si donor are resolved. The large change in emission kinetics previously observed between GaAs and AlxGa1−xAs (x≥0.14) is thus shown to arise from the local alloy disorder which is absent in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100203
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  • 10
    Electronic Resource
    Electronic Resource
    Accumulation capacitance for GaAs-SiO2 interfaces with Si interlayers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1919-1921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the properties of metal-oxide-semiconductor (MOS) structures fabricated by remote plasma-enhanced chemical vapor deposition of SiO2 upon GaAs substrates. For n-type GaAs, a silicon interlayer has been found to improve the interface properties. For our samples and this interlayer, integration of the quasi-static capacitance curve indicates a band-bending range of about 0.8 eV. For these samples, we observe a hysteresis of ∼0.6 V, and shifts of only 0.2 V in the midpoint of the rise from minimum to maximum capacitance upon changing frequency from 10 to 200 kHz at room temperature. Similar measurements for temperatures down to 80 K establish that even at such low temperatures an accumulation capacitance is observed. This sets an upper limit of about 70 meV for the separation between the interface Fermi level and the conduction-band minimum. This limit is a factor of two smaller than the best previously reported limit for approach to the conduction band of GaAs in a MOS structure. Spectroscopic ellipsometry establishes that nearly 2 A(ring) equivalent thickness of unoxidized silicon is at the SiO2/GaAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104012
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