Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1815-1817
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We introduce a new GaAs/AlxGa1−xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and holes, as well as for the two-dimensional confinement of electrons. A time-of-flight measurement of the majority-electron drift velocity at room temperature is demonstrated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98532
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