ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A new silicon carbide (SiC) enhancement-mode lateral channel vertical junction fieldeffecttransistor (LC-VJFET), namely “source inserted double-gate structure (SID-gate) with asupplementary highly doped region (SHDR)”, was proposed for achieving extremely low powerlosses in high power switching applications. The proposed architecture was based on thecombination of an additional source electrode inserted between two adjacent surface gate electrodesand a unique SHDR in the vertical channel region. Two-dimensional numerical simulations for thestatic and resistive switching characteristics were performed to analyze and optimize the SiC LCVJFETstructures for this purpose. Based on the simulation results, the excellent performance of theproposed structure was compared with optimized conventional structures with regard to total powerlosses. Finally, the proposed structure showed about a 20 % reduction in on-state loss (Pon)compared to the conventional structures, due to the effective suppression of the JFET effect.Furthermore, the switching loss (Psw) of the proposed structure was found to be much lower than theresults of the conventional structures, about a 75 % ~ 95 % reduction, by significantly reducing bothinput capacitance (Ciss) and reverse transfer capacitance (Crss) of the device
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1199.pdf
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