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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 29 (1982), S. 141-145 
    ISSN: 1432-0630
    Keywords: 61.80Jh ; 61.70Tm ; 64.75+g
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing by 500-keV xenon ions has been studied in targets consisting of 2000-Å films of aluminium on a polycrystalline aluminium substrate, onto which has been evaporated a 500-Å overlayer of copper. Both long- and short-range-mixing processes have been identified, by RBS analysis of the irradiated targets, as a deep copper tail in the aluminium and interfacial broadening, respectively. The long-range component varies linearly with xenon fluence, is temperature-independent in the interval 40–500 K, and is not influenced by the presence of an interfacial oxide layer between the copper and aluminium layers. The number of long-range-mixed atoms is in agreement with theoretical estimates of the recoil mixing. The short-range mixing, which is the dominating process, has a squareroot dependence on xenon fluence and is independent of temperature between 40 and 300 K, increasing rapidly at higher temperatures. The broadening attributed to the short-range mixing is explained by interstitial diffusion within the cascade. For small xenon fluences, interfacial oxide layers inhibited both short-range mixing and thermal diffusion. Higher xenon fiuences subdued the inhibition.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 567-574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen behavior during the formation of CrSi2 and TiSi2 was studied using 16O(α,α)16O resonant scattering and mass dispersive recoil detection analysis. The Ti and Cr films were deposited by e-beam evaporation in a cryopumped system. The oxygen content in the films was varied by evaporating at different pressures. The silicide films were formed by solid-solid reaction of the metal layers with the silicon substrate, and the annealing conditions were such that both partly and fully reacted silicides were obtained. The extent of the silicide formation was monitored by backscattering spectrometry. In the case of CrSi2, oxygen was found to be uniformly distributed throughout the silicide layer after annealing. For the Ti/TiSi2 system, however, oxygen seems to have preferentially remained in the Ti layer during the silicide growth, and its final distribution was confined in a region in the silicide close to the surface. It was also observed in the latter case that silicon diffused to the surface at the initial stage of annealing. A model based on the Nernst–Einstein equation is proposed to provide a general explanation for the oxygen behavior in metal/silicon systems. In addition, it was shown that oxygen which was initially in the form of metal oxides and in solid solution had been transformed into SiO2 after the silicide formation. Oxygen loss is observed for all samples, and increases with the extent of annealing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3246-3248 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam mixing has been studied for the case where all components are collisionally similar. In this study a thin Al marker was mixed by implanting 40-keV 22Ne+ into electron-beam-evaporated Si. The mixing was studied with the nuclear resonance broadening technique. It is characterized by a broadening that is proportional to the square root of ion fluence. The data obtained at room temperature, where the negligible solubilities and thermal diffusivities do not contribute to the intermixing of Al and Si, indicate that even in the absence of the long-range transport there is a diffusion mechanism which enhances the mixing with a magnitude some 3–6 times that expected for ballistic mixing. The data is applicable for preparing Al/Si contacts by Al implantation.
    Type of Medium: Electronic Resource
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