ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The annihilation of grown-in defects in Czochralski-grown silicon was investigated during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The diffusion length of positrons L becomes larger as the annealing time increases, although the line shape parameter S is constant. The information on L, based on the "semitrapping'' phenomenon including the formation of positron Rydberg states between positrons and defects, is more sensitive for detecting minute defects. The increase in L values indicates that the grown-in defects are annihilated. The concentration of annihilated defects, related to oxygen clusters, was decreasing down to one-tenth, compared with that for an as-grown crystal. Also, the grown-in defects were annihilated at high temperature, e.g., 1150 °C. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112698
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