Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Articles: DFG German National Licenses  (32)
  • Electronic Resource  (32)
Source
  • Articles: DFG German National Licenses  (32)
Material
  • Electronic Resource  (32)
Years
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of irradiated p-type InP grown by metalorganic chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1435-1439 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a deep level transient spectroscopy study of radiation-induced defects in p-type (Zn-doped) InP grown by metalorganic chemical vapor deposition. Three major hole traps (H3, H4, and H5) and two electron traps (EA and EB) were observed. The electron trap structure in particular is significantly different from that reported in the literature for p-type InP grown by other methods. Activation energies of 0.22 eV (EA) and 0.76 eV (EB) have been measured, and capture cross sections (σ∞) of 4.4×10−15 cm2 (EA), and 1.4×10−12 cm−2 (EB) have been determined. The H5 center has a thermally activated capture cross section with an energy barrier of 0.35 eV. The measured injection annealing rate of the primary hole trap (H4) was different than previously observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347284
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Critical current enhancement in proton-irradiated Tl2CaBa2Cu2O8 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1119-1121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured changes in the superconducting transition temperature Tc and critical current density Jc of epitaxial Tl2CaBa2Cu2O8 films upon exposure to 2 MeV protons. Jc was measured inductively at 4.2 and 77 K and in fields of H=0 and 0.2 T. At 77 K and H=0, Jc decreases monotonically with increasing fluence Φ. The rate of decrease is about 1.8 times greater than for YBa2Cu3O7 films, even though the rate of change of Tc with Φ is comparable. At 4.2 K, Jc is initially enhanced, even at H=0. The maximum observed increase is 34% (to 8 MA/cm2) at Φ≈1016 protons/cm2 and H=0.2 T. This enhancement is attributed to pinning of magnetic flux lines by proton-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347384
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Radiation-induced reverse dark currents in In0.53Ga0.47As photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7244-7249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse dark current-voltage (dark I-V) curves of InGaAs photodiodes have been measured as a function of temperature following irradiation with 1-MeV electrons. Prior to irradiation, the I-V curves are well described by a diffusion term alone indicating that the junctions are of good quality. Irradiation produces a large increase in the generation current which can be modelled as resulting from a single defect center with an energy Ec−0.29 eV. Such a defect center called E2 has been detected using deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354012
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced generation currents in irradiated InGaAs photodiodes (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1629-1635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of the reverse bias current-voltage curves of 1 MeV electron irradiated In0.53Ga0.47As photodiodes has been measured at 300 K. The observed decay is shown to be correlated with the reduction of the E2 peak height with time, as measured by deep level transient spectroscopy. The reverse current is found to decay with a logarithmic time dependence, which can be explained by a model in which the annealing of the E2 defects is controlled by a distribution of thermal energy barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354812
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Effect of carrier concentration on the properties of irradiation-induced defects in p-type indium phosphide grown by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4201-4207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy has been used to monitor the effect of carrier concentration on the properties of radiation-induced defects in InP n+p mesa diodes grown by metalorganic chemical vapor deposition. The activation energy Ea for hole emission from H4 and H5 centers and the injection-enhanced annealing rate of H4 at 200 K have been measured as a function of carrier concentration NA over the range ∼1×1016– 4×1017 cm−3. The measured values of Ea decrease with increasing NA in a way that can be semi-quantitatively explained by a combination of the Frenkel–Poole effect and phonon-assisted tunneling produced by the electric field in the junction. The results suggest that hole emission from H4 and H5 centers takes place to maxima in different valence bands. The injection-enhanced annealing rate of H4 centers increases with increasing NA at low concentrations, but approaches a maximum value near NA ∼ 1017 cm−3, indicating a limiting dopant (Zn) concentration for impurity-enhanced defect annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351386
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy study of proton irradiated p-type InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6488-6494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A deep level transient spectroscopy study of proton irradiation induced defects in n+p InP mesa diodes grown by metalorganic chemical vapor deposition is reported. In contrast to results reported for InP grown by other methods, 3 MeV proton irradiation produced a DLTS spectrum similar to 1 MeV electron irradiation with the addition of two new peaks. Six majority carrier peaks: HP1(Ea=0.15 eV), H2(Ea=0.20 eV), H3(Ea=0.30 eV), H4(Ea=0.37 eV), H5(Ea=0.54 eV), and H7(Ea=0.61 eV) and three minority carrier peaks: EA(Ea=0.26 eV), EB(Ea=0.74 eV), and EC(Ea=0.16 eV) were detected. The H5 peak displayed a thermally activated capture cross section and a dependence of peak height on injection level. Isothermal annealing at 375 K was performed and thermal annealing rates are presented. Low temperature (200 K), minority carrier injection annealing rates are also presented. For most of the defects, a significant residual concentration remained after injection which could not be annealed further. An equation was developed for the annealing rate of the major defect, H4, as a function of injection level, carrier concentration, and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1−x/InP quantum-well solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2840-2846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of proton irradiation on strained InAsxP1−x/InP-based quantum well solar cells (QWSCs) have been investigated by the electron beam induced current (EBIC) and cathodoluminescence (CL) techniques. From analysis of the EBIC data, capture rates within the quantum well region have been estimated, from which the open circuit voltages of the cells were calculated and shown to agree well with the measured values. Diffusion lengths have been estimated from analysis of both the EBIC and CL measurements. The location of the energy levels of proton-induced defects and their effectiveness as nonradiative recombination centers have been determined from Arrhenius plots of the total CL intensity emitted from the quantum wells following irradiation. The results suggest that deeper and narrower quantum wells increase the sensitivity of QWSCs to radiation damage. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389755
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    A sensitive resistivity probe of high temperature phase transformations (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 410-414 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for making in situ measurements of changes in the electrical resistivity accompanying phase transformations in metallic alloys is presented. Measurements can be made in vacuum or inert gas at annealing temperatures as high as 1500 K. The long-term thermal stability is better than ±0.3 K. The measurement circuit is stable to better than 0.01% over any time scale. This apparatus provides a relatively simple and inexpensive means for obtaining high temperature resistivity measurements on very brittle samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142135
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Allylic Rearrangements. XLII. The Preparation and Some Reactions of 3β-Chlorocholest-4-ene and 3α-Chlorocholest-4-ene1 (1959)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 81 (1959), S. 1452-1454 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01515a042
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Annealing of irradiated epitaxial InP solar cells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4315-4321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing behavior of electron, proton, and alpha particle irradiated, epitaxial n+p InP solar cells has been characterized using several techniques. Current–voltage measurements were made under simulated 1 sun, AM0 solar illumination and in the dark. The radiation-induced defect spectra were monitored using deep level transient spectroscopy and the base carrier concentration profiles were determined through capacitance–voltage measurements. The irradiated cells were annealed at temperatures ranging from 300 up to 500 K. Some cells were annealed while under illumination at short circuit while others were annealed in the dark. These experiments produced essentially the same results independent of illumination and independent of the irradiating particle. An annealing stage was observed between 400 and 500 K, in which the radiation-induced defects labeled H3 and H4 were removed and the carrier concentration recovered slightly. Concurrently there was a small reduction in the junction recombination current and a slight increase in the photovoltaic (PV) output of the cell; however, most of the radiation-induced defects did not anneal, and the overall PV recovery was very small. A full analysis of the annealing data is given, and a model for the radiation response and annealing behavior of the cells is presented. The results are compared to those reported previously for irradiated, diffused junction InP solar cells. Although the radiation-induced degradation mechanisms appear to be essentially the same in the two cell types, the recovery of the PV output is found to be quite different. This difference in cell recovery is explained in terms of the defect annealing characteristics in the individual cell types. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363380
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...