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  • Electronic Resource  (30)
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  • Electronic Resource  (30)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7483-7487 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS) examines only a thin surface layer (〈5 nm) that may not be representative of the bulk. We separated the information from the surface and bulk by using laser-deposited superconducting films that have nearly atomically flat surfaces for which quantitative analysis formalisms exist. The chemical compositions of high Tc (90 K) and high Jc (〉106 A/cm2) Y-Ba-Cu-O films on SrTiO3 (001) substrates were examined. From the relative intensities of the surface and bulk components of the Ba(3d) and Ba(4d) spectra taken at different take-off angles and different escape depths [using Al Kα (1486.6 eV) and Mg Kα (1253.6 eV) excitations], we have determined the nonsuperconducting surface layer thickness to be 1 nm and the layer composition to be BaCuO2. The surface layer thickness for a superconducting film only 8 nm thick was also 1 nm. By detecting the substrate Ti signal through this film, and ruling out a high density pinholes, we provide evidence that the XPS data contain information from the superconducting phase. A polycrystalline pellet scraped in vacuum had a surface layer only 0.4 nm thick. Since typical photoelectron escape depths are about 2 nm, about 80% of the detected signal originates in the bulk. The surface layer contains Cu2+ and oxygen with a photoelectron binding energy of 531 eV.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5096-5098 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Group II-VI compound semiconductors such as CdTe can be grown epitaxially on III-V materials such as GaAs. These films possess better physical properties than their bulk-grown counterparts. This work explores the (111) CdTe/(111) GaAs system by means of MeV ion channeling. Good epitaxy is found (backscatter minimum yields of 15%) for a thickness greater than 1000 A(ring), which is remarkable considering the 14% lattice mismatch between film and substrate. A narrowing of the Cd angular scan suggests Cd atom displacement. A model based on Te vacancies is presented to describe our data.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6382-6387 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared superconducting thick films of the Bi-based and the Tl-based cuprates via the decomposition of aqueous-glycerol solutions containing the salts of the elements. Preliminary results are presented in this work. The substrates are coated prior to heat treating, either by dipping or by spraying on various substrates heated at 200 °C. Short firing times are required in order to minimize the loss of the constituent Bi (Tl). We find that nitrates of the constituents dissolved in a water-glycerol solution increase the reaction rate in comparison to pure nitrate aqueous solutions. They also help to produce the correct superconducting phase before some reaction with the substrate occurs or too much of the constituent Bi (Tl) is lost during heating to form the superconducting phase. However, the thallium phases cannot be obtained if the films are not fired in the presence of a high pressure of thallium in a sealed capsule. The films are composed of platelets, a few microns large, that are on average oriented parallel to the substrate with their c axis normal. The Bi films show an onset temperature at 85 K and zero resistance at 75 K while the Tl films show an onset temperature of 105 K and zero resistance at 95 K. The critical currents obtained to date are quite low (∼50 A/cm2 at 77 K for the thallium phase).
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3735-3740 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO3) and strontium titanate (SrTiO3). Platinum thin films grown on KTaO3 (100) at a rate of 70 nm/h showed strong Rutherford backscattering spectroscopy (RBS)/channeling effects with a χmin of 4%. In-plane φ and θ-2θ scan x-ray diffraction analysis demonstrated the three-dimensional epitaxial alignment of the platinum film with the KTaO3 substrate. Transmission electron micrographs viewed in cross section provided additional information regarding the nature of the epitaxial Pt-KTaO3 interface. The room-temperature resistivity of a 60-nm-thick Pt film on KTaO3 (100) was 12.0 μΩ cm. X-ray diffraction and pole-figure analysis showed that in the case of Pt films deposited on either fused quartz or Si (100) surfaces, the resulting films were polycrystalline and were fully textured with 〈111(approximately-greater-than) orientations perpendicular to the substrate surfaces.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3768-3777 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The products derived from the UV photolysis of Fe(CO)5 physisorbed onto porous Vycor glass have been examined by x-ray microprobe analysis, Mossbauer spectroscopy, and extended x-ray absorption fine structure spectroscopy (EXAFS). Although the photolysis and subsequent heatings are carried out in air, spectroscopic data reveal two surprisingly different forms of iron. Isomer shift, pre-edge, and EXAFS data indicate that one product is similar to α-Fe2O3 and consists of an Fe3+ ion octahedrally surrounded by six oxygen atoms at a distance of 1.8 A(ring). Isomer shift, EXAFS, and pre-edge feature analysis show that the second compound, which comprises ∼50% of the reaction product, is mainly elemental iron, in which a central Fe atom is surrounded by approximately eight other Fe atoms at a distance of 2 A(ring). X-ray microprobe analysis shows that aggregation occurs during photolysis due to the diffusion of Fe(CO)5 from the interior into exterior photodepleted volumes of glass. Heating has little effect on product ratio or distribution, but consolidating the glass at 1200 °C leads to further aggregation and formation of magnetically ordered particles that exhibit magnetic hyperfine fields of 370 and 425 kG.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 767-772 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a recent study on the in situ deposition of single phase BaTiO3 thin films by using the metalorganic chemical vapor deposition technique. The effects of growth parameters on the characteristics of the thin films were investigated in the substrate temperature range of 550–800 °C. Barium β-diketonate and titanium isopropoxide were used as the metal sources. Growth rates ranging from submicron to several microns per hour have been deposited on various substrates in an inverted vertical warm-wall reactor. X-ray diffraction data and Rutherford backscattering spectra provided the evidence for single BaTiO3 phase. Scanning electron microscopy was used to study the surface and the cross-sectional morphology of the films. Dielectric constant of the as-deposited film was around 250 at room temperature. The resistivity of the films were greater than 109 Ω cm.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4890-4893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of ErAs were grown by molecular beam epitaxy on (100) GaAs. The lattice mismatch induced strain and subsequent lattice relaxation were studied using Rutherford backscattering spectrometry and ion channeling. The channeling results showed a strong thickness dependence for the backscattered minimum yield. Channeled angular scans showed the thin films to be fully strained up to 15 nm in thickness. Thicker films were found to relax with full relaxation not being reached until the 100-nm thickness range. The thick films were found to tilt up to 0.26° with respect to the crystal axes of the substrate. The tilt is apparently a result of the strain relaxation mechanism.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
    Type of Medium: Electronic Resource
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